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半导体技术 总被引:1,自引:0,他引:1
《中国无线电电子学文摘》2006,(5)
O4712006050505电子在半导体多势垒结构中隧穿现象的研究与进展/王洪梅,刘丕均,张亚非(上海交通大学微纳科学技术研究院)//固体电子学研究与进展.―2005,25(4).―450~455.文中以探索多势垒结构的电子隧穿物理及其器件结构与性能为出发点,论述了多势垒结构隧穿现象的研究与进展 相似文献
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共振隧穿是电子的隧穿概率在某一个能量值附近以尖锐的峰值形式出现的隧穿,是目前为止最有希望应用到实际电路和系统的量子器件之一,其特点是器件的响应速度非常快。本文用传递矩阵的方法分别计算了在外加偏压下,对称双势垒、三势垒应变量子阱结构的透射系数与入射电子能量和隧穿电流与偏置电压的关系,模拟了应变多量子阱结构的隧穿系数和I-V特性曲线。计算得到隧穿电流峰值位置与实验测试值符合得很好,对于设计共振隧穿二极管并为进一步实验提供理论指导具有重要的意义。 相似文献
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讨论了电子对双势垒共振隧穿的现象和特性,较为详细地论述了近年来发展起来的具有多峰I—V特性的共振隧穿量子器件的原理、结构和电路应用,最后展望了这类器件的发展前景。 相似文献
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讨论了电子对双势垒共振隧穿的现象和特性,较为详细地论述了近年来发展起来的具有多峰I—V特性的共振隧穿量子器件的原理、结构和电路应用,最后展望了这类器件的发展前景。 相似文献
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成功地制备了Cu-Al2O3-MgF2-Au及Si-SiO2-Al-Al2O3-Au两种结构双势垒隧道发光结。由于双势垒结中第二栅存在着不同的分立能级,电子存在共振隧穿效应,使双势垒隧道结发光光谱的波长范围及谱峰位置比普通单势垒隧道结均向短波方向发生了移动。对双势垒隧道发光结的I-V特性测试表明,I-V曲线中存在着明显的负阻区,分析表明,负阻现象与电子的隧穿特性、表面等离极化激元(SPP)的激发及SPP的耦合发光之间相互关联。 相似文献
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已研制成了肖特基栅共振隧穿晶体管,在双势垒结构上蒸发铂金形成栅。通过调制准二维电子积累层的面积进而达到控制隧穿电流的目的。并对发射极正反接电压不同而出现的不同调制现象进行了分析。 相似文献
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Experimental investigation on resonant tunneling in various GaAs/Al_xGa_(1-x)As double barrier single well structures has been performed by using tunneling spectroscopy at different temperatures.The results show that in addition to resonant tunneling via GaAs well state confined by Al_xGa_(1-x)As Γ-point barrier there exists resonant tunneling via GaAs well state confined by Al_xGa_(1-x)As X-point barrier for both indirect(x>0.4)and direct(x<0.4)cases. 相似文献
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《Electron Device Letters, IEEE》1985,6(12):636-638
Three-terminal devices based on resonant tunneling through two quantum barriers separated by a quantum well are presented and analyzed theoretically. Each proposed device consists of a resonant tunneling double barrier heterostructure integrated with a Schottky barrier field-effect transistor configuration. The essential feature of these devices is the presence, in their output current-voltage (I_{D} - V_{D} ) curves, of negative differential resistances controlled by a gate voltage. Because of the high-speed characteristics associated with tunnel structures, these devices could find applications in tunable millimeter-wave oscillators, negative resistance amplifiers, and high-speed digital circuits. 相似文献
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New results on the physics of tunneling in quantum well heterostructures and its device applications are discussed. Following a general review of the field in the Introduction, in the second section resonant tunneling through double barriers is investigated. Recent conflicting interpretations of this effect in terms of a Fabry-Perot mechanism or sequential tunneling are reconciled via an analysis of scattering. It is shown that the ratio of the intrinsic resonance width to the total scattering width (collision broadening) determines which of the two mechanisms controls resonant tunneling. The role of symmetry is quantitatively analyzed and two recently proposed resonant tunneling transistor structures are discussed. The third section deals with perpendicular transport in superlattices. A simple expression for the low field mobility in the miniband conduction regime is derived; localization effects, hopping conduction, and effective mass filtering are discussed. In the following section, experimental results on tunneling superlattice photoconductors based on effective mass filtering are presented. In the fifth section, negative differential resistance resulting from localization in a high electric field is discussed. In the last section, the observation of sequential resonant tunneling in superlattices is reported. We point out a remarkable analogy between this phenomenon and paramagnetic spin resonance. New tunable infrared semiconductor lasers and wavelength selective detectors based on this effect are discussed. 相似文献
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Woolard D.L. Buot F.A. Rhodes D.L. Xiaojia Lu Perlman B.S. 《Electron Devices, IEEE Transactions on》1996,43(2):332-341
The intrinsically fast process of resonant tunneling through double barrier heterostructures along with the existence of negative differential resistance in the current-voltage characteristic of these structures has led to their implementation as sources for high frequency electromagnetic energy. While sources based upon resonant tunneling diodes (RTDs) have produced frequency of oscillations up to 712 GHz, only microwatt levels of performance has been achieved above 100 GHz. Since stability criteria plays critical role in determining the deliverable power of any oscillator, a physically accurate equivalent-circuit model for the RTD is extremely important for optimizing the dynamics of the device-cavity package. This study identifies a distinctly new equivalent circuit model for characterizing the modes of oscillation in RTD-based sources. Specifically, in order to exhibit the fundamental self-oscillations and the overall I-V characteristics (plateau structure and hysteresis) observed experimentally, an accurate circuit model of the RTD must incorporate: (i) a quantum-well inductance which directly chokes the nonlinear conductance and, (ii) a nonlinear access resistance, associated with the accumulation of charge in the injection region of the double barriers, with a nonlocal dependence on the bias across the double barrier structure 相似文献
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报道了共振隧穿二极管(RTD)在压力下的弛豫振荡特性.采用Pspice 8.0软件仿真并设计了振荡电路,测得其振荡频率达200kHz.在(100)半绝缘(SI)GaAs衬底上利用分子束外延(MBE)技术生长了AlAs/InxGa1-xAs/GaAs双势垒共振隧穿结构(DBRTS),并采用Au/Ge/Ni/Au金属化和空气桥结构成功加工出了RTD.由于RTD的压阻效应,采用显微喇曼光谱仪标定所加应力大小,对RTD在加压条件下的振荡特性进行了研究,结果表明其弛豫振荡频率大致有-17.9kHz/MPa的改变量. 相似文献
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Fang Y.K. Chen K.-H. Liu C.-R. Hwang J.-D. Wu K.-S. Liou W.-R. 《Quantum Electronics, IEEE Journal of》1994,30(10):2293-2296
A negative differential resistance current/voltage (I/V) curve with a very high peak-to-valley current (PTV) ratio (⩾9.4) has been obtained in the a-Si:H/a-SiC:H double barrier structure with added amorphous silicon barrier enhancement layers. Although similar phenomena have been reported in the crystalline AlGaAs/GaAs double barrier diodes, the effect of the added barrier enhancement layers on the PTV ratio is not so significant as the amorphous silicon. A primary model is proposed to explain this anomalous result. Based on the model, the parameters to lower the leakage current and enhance the resonant tunneling current are suggested 相似文献
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F.M. Peeters M. Helm P. England J.R. Hayes E. Colas J.P. Harbison L.T. Florez 《Solid-state electronics》1989,32(12):1309-1313
Resonant magneto-tunneling of electrons through AlGaAs/GaAs/AlGaAs double barrier structures is investigated for samples with different quantum well widths (300–800Å) and barriers (130–200Å). In a strong transverse magnetic field, resonant tunneling is quenched, and a new set of resonances appear at low bias. These resonances are interpreted as due to tunneling between the edge states on either side of the first barrier. The edge states are the quantum mechanical analog of the classical skipping orbits. 相似文献