正弦波导慢波结构的研究

提出了一种新型的可用于产生、放大毫米波和太赫兹波的正弦波导慢波结构。该结构有天然的带状电子注通道,具有低欧姆损耗和弱反射,且易于加工等独特性质。计算了慢波结构的高频特性,粒子模拟分析了该慢波结构在220GHz行波管及220GHz返波管中的应用潜力。研究结果显示,正弦波导将是一种很有潜力的可应用于大功率毫米波及太赫兹辐射源的慢波结构。     

W波段V型曲折矩形槽波导行波管的模拟研究

分析了一种新型慢波线-V型曲折矩形槽波导慢波结构,利用电磁仿真软件CST及HFSS对其高频特性进行了模拟计算,并在此基础上设计了工作在W波段的V型曲折矩形槽波导行波管的互作用结构.利用CST粒子工作室对其注-波互作用特性进行了模拟分析.结果表明:W波段V型曲折矩形槽波导行波管能够有效放大微波信号,且频谱纯净.     

W波段大功率集成极靴式互作用结构研究

针对W波段大功率折叠波导行波管的技术难点,提出了一种一体式加工的集成极靴式互作用结构,该结构将直角型折叠波导嵌入到极靴中,实现注-波互作用结构与聚焦系统的集成,提高周期永磁系统的聚焦能力,再通过增加阴极发射的电子注电流,实现功率的提升。文中首先介绍了集成极靴式互作用结构,提供该结构中慢波结构的尺寸参数,计算其色散特性及耦合阻抗曲线,并设计了相应的磁聚焦系统。最终对互作用结构进行仿真模拟,在90~100 GHz频带内可获得高于700 W的饱和输出功率。带内饱和增益均小于20 dB,可有效防止自激振荡的产生,该互作用结构可广泛应用于级联功率放大模块的后级放大器中。     

填充等离子体波纹波导色散曲线计算软件的设计

从一种正弦波纹波导慢波结构的色散方程理论推导出发,设计了在不同结构参数、有无电子注以及填充不同等离子体浓度的情况下,计算其色散曲线的专用软件.该软件除了具有传统的数值计算功能外,提供了一个较为友好的图形用户界面.该界面直接显示该波纹波导的结构图,同时用户可以通过该界面很方便地修改各主要参数,比较不同情况下得到的色散曲线,以获得优化的参数选择.     

盘荷波导慢波结构色散特性的变分分析

盘荷波导慢波结构可以看成由无数多个波导不连续性组成，每个波导不连续性可用一个T型网络描述，其参数能用变分方法得到，再根据无耗的四端微波网络理论，可以得到这种慢波结构的色散方程，因此本文得到了一种用于计算盘荷波导慢波结构色散特性的变分法。该变分法获得的色散特性结果与用场匹配法和HFSS模拟获得的结果符合得比较好。     

0.22 THz宽带折叠波导慢波结构的设计

通过对折叠波导的理论分析,提出一种快速设计折叠波导慢波结构的方法。优化设计了中心频率为0.22 THz的折叠波导慢波结构,分析了结构参数对高频特性的影响。为防止振荡,仿真中采用截断的慢波结构。互作用仿真表明,在电子注电压为16 kV,电流为10 mA情况下,中心频率处增益为23.9 dB,输出功率为1.2 W。其中3 dB带宽大于14 GHz(0.214 THz~0.228 THz),带内输出功率大于0.5 W,在7 GHz(0.217 THz~0.224 THz)范围内输出功率大于1 W。     

太赫兹折叠波导慢波结构的设计与微加工

从行波管工作的物理特性提出了一种获得折叠波导慢波结构参数的简单方法,给定工作频率和电压,能够获得折叠波导慢波结构的初始参数.设计了D波段的折叠波导结构来验证该方法,对其冷测特性如色散、耦合阻抗进行了分析.仿真结果表明,设计的折叠波导慢波结构在中心频率处具有较平缓的色散关系,在中心频率处耦合阻抗为3.5欧姆.在电子注电压为20.6 kV,电流为15 mA时,27 mm(50个周期)的折叠波导慢波结构在220 GHz具有13.5 dB的增益,3 dB带宽为11 GHz(213~224 GHz).同时讨论了折叠波导慢波结构的微加工工艺,并通过UV-LIGA工艺获得了实验样品.     

Ka波段曲折双脊单槽加载波导行波管研究

提出了一种新型的曲折波导慢波结构:曲折双脊单槽加载波导慢波结构.利用HFSS、CST电磁仿真软件对工作在Ka波段的曲折双脊单槽加载波导行波管进行了模拟计算,得到其高频特性及注-波互作用特性.结果表明,在33 GHz可以得到265 W的输出功率,增益为37.2 dB,3 dB增益带宽为6 GHz.     

W波段阶梯型交错双栅慢波结构行波管的研究

为了提高传统交错双栅慢波结构行波管的性能,提出了一种阶梯型交错双栅慢波结构,并基于此新型慢波结构,提出了新型输入输出耦合结构.在此基础上,设计了一只工作在W波段的带状电子注阶梯型交错双栅慢波结构行波管.计算结果显示,阶梯型交错双栅慢波结构行波管的耦合阻抗更高,从而使行波管在更短的互作用电路长度里,实现更高的饱和增益和互作用效率.在90～100GHz频率范围内,阶梯型交错双栅慢波结构的耦合阻抗大于4Ω,高于传统交错双栅慢波结构;W波段带状电子注行波管高频结构的反射系数(S11)小于-15dB;并且行波管的饱和输入功率仅约为0.7W,可以实现最高输出功率约800W,相应的效率大于7.8%,增益大于30.6dB.     

折叠波导慢波结构太赫兹真空器件研究

简要介绍了利用折叠波导慢波结构的太赫兹真空辐射源的发展现状,重点对折叠波导慢波结构的特点进行了研究,并利用这种慢波结构开展了W、D波段行波管,W波段和650GHz返波振荡器,560GHz反馈振荡放大器的设计、计算和模拟优化,分别得到了较好的结果,并实际研制出W波段连续波行波管,输出功率达到8W。对太赫兹真空辐射源的部件技术、微细加工技术进行了研究和分析。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-