基于FLAASH和6S模型的Spot 5大气校正比较研究

采用基于大气辐射理论的FLAASH和6S模型,对Spot5遥感影像进行了大气校正,通过比较校正前后地物光谱曲线和NDVI分析两种类型的实际校正效果,结果表明,FLAASH模型能较好地消除了大气影响,对Spot5遥感影像有更好的校正作用。     

PHI高光谱图像的大气校正算法

从高光谱遥感图像中提取较为精确的定量信息,大气校正是必不可少的步骤.本文在应用大气辐射传输模型对高光谱遥感数据进行大气模拟的基础上,研究并发展基于遥感影像信息的经济、有效的大气辐射校正和反射率反演算法.该算法可以根据遥感图像有效地估计大气中气溶胶的空间分布,并分析交叉辐射的影响,进而对其进行大气辐射校正和反射率反演.通过对几景PH I高光谱遥感图像的校正试验,表明了这种算法的有效性.     

遥感试验数据确定大气气溶胶类型的方法研究

以太湖为研究区,通过水面光谱实验采集,地基太阳光度计大气测量,和当天的MODIS遥感影像,联合遥感太湖地区的大气光学特性,提出了一种实验确定气溶胶类型的方法.通过与卫星影像准同步的地面光谱和太阳光度计试验,利用辐射传输模式6S,变化气溶胶类型各组分,建立关于星上辐射的查找表,并利用定义的相对误差参量,在其总误差最小时确定气溶胶类型.将其用于改进后的Mie散射程序来计算大气气溶胶粒子群包括偏振散射相函数等的光学特性,并用于太湖地区大气气溶胶光学厚度的反演中,所得结果参考CE318实测值,反演精度有了较大的提高.该研究方法与结果可为大气气溶胶光学特性计算,大气辐射传输方程,气溶胶光学厚度反演,卫星数据大气校正等遥感应用提供支持.     

山地光学遥感成像仿真的实现

为了进一步提高对山区地表特征的研究精度,为光学遥感摄影等相关工作提供有力参考,基于山地辐射传输方程建立了一个山地光学遥感成像仿真模型.利用辐射传输软件MODTRAN4.0进行辐射计算及大气校正,结合得到的数字方程模型(DEM)数据进行地形参数的计算,以美国资源卫星的多光谱扫描影像(TM)为基础反演得到地表反射率.通过对...     

高分遥感卫星影像的预处理技术

随着高分一号、二号卫星的成功发射,我国高分辨率对地观测系统得到了广泛的应用,而高分遥感卫星数据的预处理过程是高分应用的前提与先决条件。详细梳理和概括了高分数据的预处理过程,首先介绍了遥感软件的选取,然后重点阐述了包括影像的正射校正技术、配准与融合技术、镶嵌技术及大气校正技术在内的影像预处理技术,最后对数据格式转换加以说明。     

基于多源遥感影像的多尺度城市植被覆盖度估算

以Landsat 7 ETM+、SPOT 5和IKONOS遥感影像数据为数据源,利用格网法从1∶500地形图提取的不同空间分辨率的植被覆盖度为参考依据,通过对不同辐射校正水平的遥感影像获得的植被覆盖度进行精度比较分析,对多源多尺度和多源同尺度城市植被覆盖度估算的相关问题进行研究.研究表明,在城市区域进行植被覆盖度估算时,ICM模型为较佳辐射校正模型;对于高分辨遥感影像,NDVI为植被覆盖度估算的较佳植被指数;对于中分辨率影像,植被覆盖度估算的较佳植被指数则为RVI和MSAVI;就研究区而言GI模型比CR模型估算的植被覆盖度更准确.     

基于FME的无人机遥感影像几何校正

遥感影像几何校正的质量和速度将会直接影响到后续的数据处理和定量提取信息的质量.基于大数据量的3级无人机影像,探讨将其从西安80坐标转换到北京54坐标的快速处理方法.分别采用Erdas二次多项式变换和FME仿射变换进行单幅影像校正,对比发现仿射变换校正后的影像与参考卫星影像地物匹配效果更好,可达到应用的精度.并利用FME批处理功能,大大提高了工作效率.实验表明：当控制点精度满足要求且原始到目标坐标系的转换属于二维线性变换时,FME是快速几何校正的一种有效手段.     

基于环境星CCD数据的山区大气校正研究

山区地形崎岖，高程变化较大，遥感影像地形效应明显，地物的光谱特征容易受到干扰，导致在分类过程中对遥感影像出现误分，不利于遥感信息的提取。基于辐射传输原理，利用Python开发了针对山区的大气校正算法。所提算法充分考虑了太阳直接辐射、天空散射辐射及邻近地表反射辐射对卫星入瞳处目标辐亮度的影响，可以有效地消除地形阴影的影响。利用所提算法，结合数字高程模型（DEM），对环境减灾二号01组卫星的CCD传感器的山区数据进行大气校正研究。分析结果表明：校正后的图像地形效应减弱，图像质量得到了明显的改善，反演得到的地表反射率与实地测量的地物光谱数据比较吻合，为进一步开展定量遥感研究提供了数据质量保障。     

400-1000nm波段反演气溶胶光学厚度的暗像元法

从卫星遥感的角度来看,气溶胶的不确定性是可见一近红外遥感中大气校正的难点,从遥感数据本身来反演气溶胶参数,进而完成大气校正,一直是遥感研究的重点.针对可见一近红外波段大气辐射传输特点,提出了利用浓密植被红波段(660 nm)与近红外波段(830 nm)之间的线性关系反演气溶胶光学厚度的基于可见近红外波段的暗像元法,该方法主要思想是首先假设在清洁大气的条件下,利用MODTRAN辐射传输模型对遥感图像进行大气校正,以减少近红外波段大气的影响,再通过双层叠代法搜索浓密植被像元作为暗像元,根据红波段和近红外波段之间的线性关系通过近红外波段计算暗像元的红波段表观反射率,并反演气溶胶光学厚度.利用该方法对PHI航空高光谱图像进行了气溶胶光学厚度的反演,并给出了反演原理、步骤和误差分析.     

基于TSVM和纹理特征的WIS遥感影像分类方法

针对宽波段成像光谱仪数据为中等空间分辨率、谱段多的特点,提出一种结合双子支持向量机(TSVM)和纹理特征的WIS遥感影像快速分类方法。选用经过几何校正的二级数据产品,进行大气校正、反射率计算等预处理后,裁切出500×500大小的影像作为实验对象。选择以相关性分析的方法获取特征波段。为解决狭小水体混合像元难以区分的问题,选择计算NDWI指数,然后提取其纹理特征。最后,基于TSVM和传统SVM进行分类实验,样本训练及预测的时间分别为14.27 s,26.41 s,得到的总体分类精度分别为87.861 3%,87.659 0%。结果表明,基于TSVM和纹理特征的分类算法不仅训练速度快,而且具有良好的泛化能力。宽波段成像光谱仪数据在中等尺度的土地覆盖分类中具有极大的应用价值。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.