色散效应对钝化硅太阳电池减反射膜系设计的影响

在考虑折射率色散效应基础上,以加权平均反射率作为评价函数,通过智能优化算法对空间硅太阳电池减反射膜进行优化设计,得到了最佳的膜厚参数,并与不考虑色散下设计的减反射膜进行了比较。对MgF2/TiO2,SiO2/TiO2双层减反射膜,与不考虑色散情形相比,考虑色散下优化后的最小加权平均反射率分别减小了36.6%和37.6%;对具有厚度为15 nm的SiO2钝化层的硅太阳电池的MgF2/TiO2,SiO2/TiO2减反射膜重新优化设计,与不考虑色散情形相比,考虑色散下优化后的最小加权平均反射率分别减小了43.9%和33.7%;对具有不同厚度钝化层的空间硅太阳电池,在考虑色散下进行了减反射膜的优化设计。结果发现,随着钝化层厚度的增加,所得减反射膜的最小加权平均反射率也随之增大,减反射效果越来越弱。最后,在考虑与未考虑色散情形下,将钝化层膜厚也作为反演参量后重新设计。结果表明:在色散情形下所设计的减反射膜更佳,对于MgF2/TiO2/SiO2（钝化层）膜系,最佳膜厚参量为d1（MgF2）=97.6 nm,d2（TiO2）=40.2 nm,d3（SiO2）=4.9 nm;对于SiO2/TiO2/SiO2（钝化层）,最佳膜厚参量为d1（SiO2）=85.1 nm,d2（TiO2）=43.4 nm,d3（SiO2）=1.8 nm。     

基于频域分析的光学相干显微镜中的色散补偿

提出基于频域分析的色散补偿方法,对光学相干显微镜的干涉信号进行快速傅里叶变换,得到频率幅值极大值对应的平均波数,将提取的解包裹后的相位以平均波数为中心做多项式拟合,得到二阶色散系数。实验中,通过在参考臂中插入不同厚度的色散介质来引入两个干涉臂色散介质的光程差,并求得相应的二阶色散系数。通过最小二乘线性拟合,证实了二阶色散系数和色散介质的相对厚度具有很好的线性关系。根据该线性关系,可以在参考臂中插入适当厚度的色散介质来完全补偿干涉系统的二阶色散。     

同轴波纹波导的高频特性数值分析

本文提出先用时域有限差分法计算含周期慢波结构的谐振腔的谐振频率和谐振场分布,再基于周期慢波电路色散关系的周期性质,由几个特殊色散点处的频率及波数数值组合出周期慢波线的完整色散关系的新方法。数值计算了同轴波纹波导中TM0n模式的色散关系、耦合阻抗等特性参量。     

涂覆聚合物膜的Love波传播特性

该文计算了涂覆聚合物膜的 Love 波传感器波速和波导层相对膜厚的关系,并进行了实验验证。Love 波器件以ST-90°X石英晶体为基片,在基片表面镀一层不同膜厚的聚乙烯醇(PVA)膜作为波导层兼吸湿层。采用网络分析仪测量了相对湿度35%左右器件的工作频率和插入损耗分别随膜厚的变化,算出 Love 波波速和 PVA 相对膜厚的关系,当PVA膜厚度从0增大到波长的5%时,Love波速度由约4 992 m/s降低到4 840 m/s,和理论计算结果一致。     

涂覆聚合物膜的Love波传播特性

该文计算了涂覆聚合物膜的Love波传感器波速和波导层相对膜厚的关系,并进行了实验验证。Love波器件以ST-90°X石英晶体为基片,在基片表面镀一层不同膜厚的聚乙烯醇(PVA)膜作为波导层兼吸湿层。采用网络分析仪测量了相对湿度35%左右器件的工作频率和插入损耗分别随膜厚的变化,算出Love波波速和PVA相对膜厚的关系,当PVA膜厚度从0增大到波长的5%时,Love波速度由约4 992m/s降低到4 840m/s,和理论计算结果一致。     

同轴波纹波导的高频特性数值分析

本文提出先用时域有限差分法计算含周期慢波结构的谐振腔的谐振频率和谐振场分布,再基于周期慢波电路色散关系的周期性质,由几个特殊色散点处的频率及波数数值组合出周期慢波线的完整色散关系的新方法。数值计算了同轴波纹波导中ＴＭ０ｎ模式的色散关系、耦合阻抗等特性参量。     

利用Hg1—xCdxTe本征区反射峰确定其截止波数和组分

利用ＦＴＩＲ光谱仪测量了一组Ｈｇ１－ｘＣｄｘＴｅ样品的透射和反射光谱，利用透射测量确定样品的组分，在反射光谱中明显地观察到一个反射极大点，考虑直接带隙样品捐收系数以及Ｋ－Ｋ关系，理论分析得到反射极大点出现的范围为Ｅｇ〈ｈωｍ〈２Ｅｇ，通过反射极大点的波数与截止波烤的比较，得现两者之间存在正比关系的结论，其比例常数为１．０９２。     

倾斜对光纤光栅反射特性的影响

利用倾斜光纤光栅的结构特点和光栅中光波的耦合模方程,分析研究了倾斜光纤光栅的反射特性。模拟分析结果表明,倾斜使光栅反射谱的中心波长向长波长移动,倾角增大时,反射谱的波纹增大,带宽减小,同时时延波纹减小,色散增大。     

ESD对RuO2厚膜电阻阻值的影响

采用静电放电(Electrostatic discharge,ESD)发生器对RuO2厚膜电阻直接放电,研究了电阻阻值变化率与电阻尺寸、阻值和ESD条件的关系。结果表明:厚膜电阻阻值受ESD作用而下降;相同ESD及阻值条件下的阻值变化率随电阻尺寸的增大而减小;相同电阻的阻值变化率随ESD电压的增大而增大;10kΩ左右的厚膜电阻在ESD作用下的阻值变化率最大,阻值变化率随着阻值的减小和增大而呈减小趋势;对10kΩ厚膜电阻反复施加不断增大的ESD电压,除宽度尺寸为0.45mm的电阻阻值在8～10kV之间出现一次回升外,电阻阻值逐步下降。     

真空紫外反射镜的制备及其测量

本文研究了真空紫外(300～2000?)反射膜的反射特性,这些特性包括反射率和材料种类、膜厚、制备参数、人射角及人射波长的关系。介绍了真空紫外反射率的测量装置,并给出了测量结果及误差分析。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.