几种LDPC码的最小汉明距离的计算

本文提出一种计算LDPC码的真实最小汉明距离的方法．该方法能够用来计算多种LDPC码方案的真实最小汉明距离，比如准循环LDPC码、pi-旋转LDPC码等．该方法是通过计算码的环长间接地找到LDPC码最小距离，由于计算环长的计算量要远比直接计算最小汉明距离来得低，因而该算法能够在有限时间内找到LDPC码的真实最小距离．通过仿真表明，用目前主流的个人计算机利用该方法找出一个有最小距离24的码率为1／4的准循环LDPC码最小距离大概需要花77分钟。     

准循环LDPC码最小汉明距离的计算与校验矩阵的改善

基于线性代数的基本原理和线性分组码的结构特点,提出了能准确计算QC LDPC码最小汉明距离的方法,并对计算复杂度进行估计;然后针对QC LDPC码的结构特点,对其校验矩阵进行改善,以增大码字的最小汉明距离,从而得到更好的译码性能.其中,计算最小汉明距离的方法同样适用干普通的线性分组码.     

不规则LDPC码构造方法研究及其改进

通过对码的度数分布进行设计,非规则LDCP码能获得比规则LDPC码更好的性能,但非规则LDPC码在高SNR区会出现错误平层.在本文中,利用ACE算法,对非规则LDPC码的构造方法PEG算法进行改进,以降低非规则LDPC码的错误平层.最后Matlab模拟证明此算法有效提高了非规则LDPC码在加性高斯白噪声通道中的纠错性能.     

基于循环移位矩阵的LDPC码构造方法研究

论文提出了一种将矩阵分块并以单位阵的循环移位阵为基本单元构造LDPC码的校验矩阵的方法,降低了LDPC码在和积算法下的译码复杂度。同时,基于这种循环移位矩阵构造的类下三角结构可以减小编码复杂度。仿真和分析结果表明,这种LDPC码相对于随机构造的LDPC码在环长分布、最小汉明距离以及误码率性能方面也具有优越性。     

构造接近香农极限的低密度校验码

低密度校验(LDPC)码的性能优劣在很大程度上取决于该码的最小环长(Girth)和最小码距。本文采用几何构造方法构造最小环长为8的LDPC码,联合随机搜索算法改善其码重分布,所构造的LDPC码在码长为4k、编码效率为0.95时,距离香农极限仅1.1dB。     

具有低编码复杂度准循环扩展LDPC码的构造方法

PEG(Progressive-Edge-Growth)算法是迄今为止构造性能优异的LDPC中短码的一种有效构造方法,然而直接采用该算法构造的LDPC码的编码复杂度正比于码长的平方,这是其实用化过程中的一个瓶颈。针对这一问题,提出一种具有低编码复杂度和低错误平层的准循环扩展LDPC码的构造方法。该算法在PEG算法基础上,先构造出近似下三角结构的半随机基矩阵,然后再对基矩阵进行扩展,该方法可以在不改变基矩阵的度分布比例情况下,有效消除短环。仿真结果表明,所提出的方法构造的LDPC码比原始的PEG算法构造的随机LDPC码具有更低的错误平层,而且编码复杂度更低,更易于硬件实现。     

一种抑制LDPC码环路影响的软件方法

对低密度奇偶校验码(LDPC)在AWGN(Additive White Gaussian Noise)信道下的译码算法进行了深入研究,分析了在译码过程中出现突发错误的原因,指出出现这种错误是由于在校验矩阵中存在环路,提出了一种抑制突发错误的软件方法。在该方法中,只需对LDPC码的译码程序进行适当控制,就可有效抑制由于环路影响而出现的突发错误,进一步提高了LDPC码的译码性能和译码程序的稳定性,扩大了LDPC码的应用空间。     

一种具有最小距离下界的正则LDPC码的构造

主要提出一种新的计算规则LDPC(low-density parity-check)码的最小距离下界的方法。该方法是基于LDPC码的每个变量节点的独立树进行构造LDPC码。与随机构造的LDPC码和用PEG方法构造的方法比较,这个新的构造方法得到了更大的围长和最小距离下界。在AWGN信道中,在码长N=1 008和N=1 512时进行Matlab仿真,仿真结果表明随着信噪比的增加此方法构造的LDPC码有优异的误码率性能。     

纠正随机错误与长突发删除的多进制乘积码研究

考虑多进制LDPC码的符号特性，以及对其残留错误和删除的分析，本文采用多进制LDPC码作为内码，相同Galois域下的高码率RS码作为外码来构造多进制乘积码；并提出了一种低复杂度的迭代译码方案，减少信息传输的各类错误。在译码时，只对前一次迭代中译码失败的码字执行译码，并对译码正确码字所对应的比特初始概率信息进行修正，增强下一次迭代多进制LDPC译码符号先验信息的准确性，减少内码译码后的判决错误，从而充分利用外码的纠错能力。仿真结果显示，多进制乘积码相较于二进制LDPC乘积码有较大的编码增益，并通过迭代进一步改善了性能，高效纠正了信道中的随机错误和突发删除。对于包含2%突发删除的高斯信道，在误比特率为10-6时，迭代一次有0.4 dB左右的增益。      

一类适用于卫星回传系统的LDPC码的构造方法

指出了在卫星回传系统中采用Turbo码和LDPC码作为纠错码的优缺点,介绍了LDPC码的常用构造方法。在此基础上提出了一类适于在卫星回传系统中使用的LDPC码的构造方法,最后对使用该方法构造的LDPC码在纠错性能上,和Turbo码进行了仿真分析比较。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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