基于ZigBee和PLC的温室监控系统的设计

针对传统温室监控系统能耗高、布线复杂及维护困难等问题,提出了一种基于Zigbee技术与PLC的温室监控系统的设计方案,该系统以芯片CC2530为核心构建了无线数据采集节点和星形网络,实现了对温室内的温度、湿度、光照度、二氧化碳浓度等环境因子的采集和无线传输,作为主控制器的PLC按照预先设定的参数和从主节点传输来的数据对温室环境进行自动调节,上位机采用MCGS组态软件对整个PLC控制系统进行监控。详细阐述了系统软硬件的实现方法。经实际应用表明：该系统具有功耗低,组网灵活,可靠性高等特点,能满足温室控制的需求。     

基于XMEGA的温室环境检测仪的设计

传统温室环境检测仪存在检测的环境参数种类少、检测精度低等缺陷。为了满足温室的环境检测需求,本文提出了一种采ATMEL公司的NXMEGA系列单片机作为控制器,结合传感器模块、显示模块、报警模块等模块电路建立温室环境检测系统的方案。经实验证明,该方案具有检测精度高、响应快、节能等特点,能很好的满足温室环境检测的需求。     

基于ZigBee的温室大棚环境监测系统的研究

针对温室大棚环境中的温度、湿度、光照度、CO2浓度等环境因子对作物的生产有很大的影响,本文提出了一种基于Zig Bee的温室大棚环境监测系统的设计方案。采用CC2530微处理器采集温室大棚环境的光照度、CO2浓度和温度等基本环境因子,通过Zig Bee模块将采集的数据发送给节点,实现节点间的无线通信。实验表明,该设计功耗低且具有良好的稳定性,实现对温室大棚环境监测,具有较高的推广价值和应用前景。     

温室环境控制系统

针对传统温室有线数据采集系统存在着成本较高、可靠性和移动性较差等问题,提出了一种应用无线技术组建温室数据采集系统的设计和应用方案。通过无线收发模块实现温室内各种生长环境检测传感器无线化,从而实现温室内作物生长环境的无线智能调控,为解决传统温室有线系统的局限性提供了技术措施;该系统操作简单,具有人性化。为提高温室环境信息管理自动化程度和设施农业种植决策提供依据,从而提高了温室生产的技术水平,减轻了劳动强度,提高了劳动效率。众所周知,光、温度、湿度是农业生产不可缺少的因素,所以本设计将其作为重点数据来处理。首先,对温度、湿度、二氧化碳浓度传感器的发展现状、发展趋势做了简单综述;然后,介绍了系统的工作原理和设计方法,对在控制过程中主要应用的DS18820、TGS4160、SHT11、LCD显示器及C8051F020、PTR2000、MAX232、MAX692等的结构特点进行了简单的介绍;最后,从硬件和软件两方面详细讲述了对温室各项指标控制的过程。     

基于LED光源的温室光环境监测与控制系统设计

为了降低照明能耗费用及多层立体式培养的需求,提出了一种基于LED光源的智能温室光环境监测与控制系统设计方案,并完成系统的软硬件设计。该系统通过MCU进行控制来改变温室的光环境。系统监控采用Labview进行编程,完成对其参数的实时监测。实际应用表明,该系统具有操作简便、检测准确的特点,具有很强的实用性和推广性。     

基于B/S结构和开源yeelink平台的智能温室大棚的系统设计

基于B/S结构、开源yeelink API进行系统构建和网页发布,并采用MVC模式构建页面。实现了温室大棚的数据可视化、达到更好的人机效果和用户体验的系统。该系统能够满足当前对温室大棚的环境检测和控制的需求。解决了C/S两层结构存在的可扩展性、可维护性等缺陷,为设备保障、网站优化布局提供了更好的实现方式。     

基于智能手机的温室环境监控技术的研究

移动互联网技术的蓬勃发展,基于智能手机的应用也不断增多,本文正是在这一背景下提出了基于手机的温室环境监控系统应用。考虑到Android平台在智能手机所占较高市场份额,在此开发了一款运行于Android手机的温室环境监控系统应用软件,它真正实现了温室环境的掌上监控,其便捷性不言而喻,因此该应用具有一定的研究价值。通过前端节点设计、GPRS通信设计、Android客户端软件设计3个模块完成系统功能,经过测试,该系统运行正常且基本功能均已实现,并且将温室监控搬至手机端,实现"掌上化"管理。     

物联网温室短消息服务平台研究

针对温室管理者难以实时监测温室运行状况的问题,本文设计了基于GSM Modem的温室短消息服务平台,从系统构架、数据库设计、串口通信、短消息接口等方面详细介绍了该平台实现的方法。通过对平台进行设置,管理者可以随时获取温室的运行状况,也可以定时接收温室的报警信息,该系统运行良好,满足了温室管理中实时监测的要求。     

基于GSM短消息的温室环境监测系统

为实现温室环境监测的便捷化,设计一种基于MSP430F149和TC35i的温室环境短信监测系统。该系统采用多种传感器实现对温度、湿度、光照强度、CO2浓度等参数的实时采集,实现数据的获取、处理功能,提高了对环境数据采集的自动化水平,具有扩展性好、实用性强、便于操作等特点,并具有较高的推广价值。     

基于GSM短消息的温室环境监测系统

为实现温室环境监测的便捷化,设计一种基于MSP430F149和TC35i的温室环境短信监测系统.该系统采用多种传感器实现对温度、湿度、光照强度、CO2浓度等参数的实时采集,实现教据的获取、处理功能,提高了对环境数据采集的自动化水平,具有扩展性好、实用性强、便于操作等特点,并具有较高的推广价值.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.