固态微波毫米波、太赫兹器件与电路的新进展

固态微波毫米波、太赫兹器件与电路是微电子、纳电子领域的战略制高点之一,SiCMOS技术进入纳米加工时代,GaAs,InP材料的"能带工程"(超晶格、异质结),GaN材料的宽禁带和界面特性以及石墨烯纳米级新材料的创新发展都深刻影响着固态微波毫米波、太赫兹器件与电路的进展。描述了固态微波、毫米波和太赫兹器件与电路当前发展的新亮点,包括纳米加工技术、石墨烯新材料、GaN MMIC功率合成突破3 mm频段百瓦级、三端器件进入太赫兹和两端器件倍频链突破2.7 THz微瓦功率。并重点就当前发展的RF CMOS,SiGe HBT,LDMOS,GaAsPHEMT,GaAs MHEMT,InP HEMT,InP HBT,GaN HEMT,GFET和THz倍频链等10个领域的发展特点、2011年最新发展以及未来发展趋势进行介绍。     

毫米波固态器件及模块技术进展

毫米波固态器件及模块技术由于其体积小、重量轻、可靠性高等优势，已在毫米波技术领域逐步占据了重要地位，本文重点介绍了从雪崩管、耿氏管、隧道管等两端器件到三端器件MESFET，再到新型器件，如PHEMT，HBT等的发展历程，以及毫米波集成电路技术和毫米波模块电路技术的进展情况。     

基于合成技术的毫米波太赫兹固态功放研究进展

随着下一代通信和装备向着更大带宽和更高精确度的方向发展,毫米波太赫兹频段成为微波技术研究的重点方向。发射功率是太赫兹系统中的关键指标,功率的大小直接决定了系统的作用距离。近些年来,毫米波太赫兹频段的固态功率器件取得了显著进步,推动了国内外太赫兹固态功率放大器的工程实现。本文介绍了国际上毫米波太赫兹频段功率合成技术和固态功放的研究现状,以及我国特别是南京电子器件研究所在W波段与G波段基于径向功率合成技术、矩形波导合成技术以及硅基波导合成技术的固态功放模组的最新研究进展。     

用于太赫兹高速直接调制技术研究进展

分析了近年来太赫兹直接调制技术的发展情况,技术特点以及应用前景。随着外调制技术的快速发展,调制速率有大幅度的提高,并且与目前主流的基于肖特基二极管等固态器件太赫兹发射链路易于集成等特点,已被认为是一种在太赫兹高速通信领域中具有应前景的太赫兹调制技术。     

InP基三端太赫兹固态电子器件和电路发展

随着微电子技术的飞速发展,半导体器件的截止频率已经进入到太赫兹频段,太赫兹电路的频率特性得到极大发展。以固态器件为基础的太赫兹电路的工作频率进入到THz频段。本文重点介绍InP基双极器件和场效应器件的发展以及在太赫兹电路和系统中的应用。     

太赫兹与毫米波技术

正征稿类型《红外与毫米波学报》研究论文综述论文征稿范围太赫兹光子学与电子学太赫兹源太赫兹探测太赫兹功能器件太赫兹人工材料太赫兹等离激元太赫兹测量与谱仪太赫兹混频、放大与调制太赫兹天线、传输与通信太赫兹传感、探测与成像毫米波雷达传感器毫米波器件与应用太赫兹与毫米波位于传统的红外与微波的过渡区域,是电磁频谱中具有重大科学意义和前景的频段。近年太赫兹-毫米波相关的材料、器件和技术发展迅速,     

固态微波电子学的新进展

固态微波电子学是现代电子学的重要分支之一,其基础材料已由第一代半导体Si和Ge、第二代半导体GaAs和InP,发展到第三代半导体GaN和SiC,石墨烯和金刚石等C基新材料正在进行探索性的研究,其加工工艺的尺寸也已进入纳米尺度,其工作频率已达到1 THz,应用的频率可覆盖微波毫米波到太赫兹.目前固态微波电子学呈多代半导体材料和器件共同发展的格局.综述了具有代表性的1 1类固态器件(RF CMOS,SiGe BiCMOS,RF LDMOS,RF MEMS,GaAs PHEMT,GaAs MHEMT,InP HEMT,InP HBT,GaN/SiC HEMT,GFET和金刚石FET)近几年的最新研究进展,详细介绍了有关固态微波电子学的应用需求、技术特点、设计拓扑、关键技术突破和测试结果,分析了当前固态微波电子学总的发展趋势和11类固态微波器件的发展特点和定位.最后介绍了采用3D异构集成技术的射频微系统的最新进展,指出射频微系统是发展下一代射频系统的关键技术.     

液晶太赫兹光子学研究进展

液晶作为液态和固态之间的中间态，具有液体的流动性和晶体的各向异性，其指向矢灵活可调，从微波到紫外都有广泛应用。近年来液晶光子学在太赫兹波段展现出巨大应用前景，本文综述了基于液晶的太赫兹源、可调太赫兹器件和太赫兹探测器的研究进展，探讨了未来液晶太赫兹光子学的发展趋势，如新型铁电向列相、液晶拓扑在太赫兹领域的应用，多模式、多参量的太赫兹波按需产生、调制与探测等。     

固态微波,毫米波器件的国内外差距及其发展

本文首先论述当前因态微波，毫米波器件的总体发展特点及各种固态微波，毫米波三端器件的可用频率发展水平，最后，对这类器件及其ＭＩＭＩＣ的国内外技术发展水平进行定量对比研究，明确其差距，透视其方向。     

液晶介电常数在微波至太赫兹频段测试技术

基于液晶材料的器件成为毫米波及太赫兹波领域的重要方向之一,文中总结了毫米波太赫兹波液晶器件的研究进展,介绍了液晶移相器的基本原理及应用,分析了液晶介电常数的主要测试方法,如传输线/反射法、谐振腔法、自由空间法、时域法等,比较了不同方法的测试频率范围和优缺点,并给出了向列相液晶材料在微波毫米波及太赫兹波段的介电常数的主要测试结果。     

Nonreciprocal millimeter-wave devices using a solid-state plasma at room temperature

We have demonstrated nonreciprocal millimeter-wave properties, first observed by us, in a waveguide loaded with a thin slab of n-InSb at room temperature by the construction of three kinds of nonreciprocal devices, all operating at W-band frequencies. Measurements have shown that the nonreciprocal properties previously observed at K-band are indeed maintained from the microwave to the millimeter-wave region and the characteristics of our devices are comparable with those we developed at K-band frequencies. These results show that the development of practical solid-state wide-band nonreciprocal millimeter-wave devices should be possible.     

Foreword, May 1979

Solid-state devices have been key to the development of todays microwave systems. RADARs, communications systems, and EW systems currently in use offer advantages in performance, size, reliability, and cost that would certainly not be possible without these devices. Equally certain is the fact that the future course of microwave and millimeter-wave systems will be determined by solid-state devices currently under development.     

Low-Noise Millimeter-Wave Receivers

Over the past several years, significant improvements have been made in solid-state devices (that is, avalanche diodes, Gunn diodes, varactors, mixer diodes, etc.) that have enhanced the overall capability and low-noise performance of millimeter-wave receivers. With these improved devices, it is now possible to configure completely solid-state low-noise millimeter-wave receivers. As is similar in the microwave region, low-noise parametric amplifiers, broad-band low-conversion-loss mixers, and solid-state local oscillators are now available. Furthermore, cryogenically cooled parametric amplifiers and mixers are also being developed that will result in achieving the ultimate in system sensitivity. With the flexibility offered by these completely solid-state millimeter-wave components, it is now possible to design the optimum system configuration for the intended application whether it be an advanced communication system, a sophisticated EW application, a RADAR system, a radiometric system, or satisfying any of the numerous receiver requirements that are being evolved. This paper explores the trends that are being developed in the millimeter-wave region and their application to system design. The performance criterion of various receiver systems and their sensitivity requirements are presented. A review of the system operating noise temperature concept and the method by which it can be determined and its applicability to low-noise components is demonstrated. A review of the state-of-the-art of low-noise systems and experimental data obtained in the millimeter-wave region is also presented.     

Negative conductance in semiconductors

Until recently, investigators have been frustrated in their attempts at applying microwave and millimeter-wave frequencies to semiconductor devices. During the last few years, the discovery of avalanche transit-time and Gunn effects in bulk semiconductors has been met with overwhelming enthusiasm. The successful fabrication of models presently utilizing these negative-conductance phenomena has given these high-frequency devices an optimistic outlook for the future.     

Foreword, Nov. 1976

For more than a quarter of a century, engineers and scientists have been challenging the frontier of microwave technology with the prospect of extending it into millimeter-wave systems applications. The progress toward this goal had been relatively slow. In recent years, however, a significantly increased effort has been directed toward the development of various solid-state devices for use at millimeter-wave frequencies. This has brought a rapid progress in the field of millimeter waves in many countries, particularly in Europe, Japan, and North America.     

Microwave and Millimeter-Wave Communications in Japan

This paper reviews the status of research and development in both microwave radio-relay systems and millimeter-wave transmission systems as well as the technical features in these fields, mainly developed under the auspices of Nippon Telegraph and Telephone Public Corporation (NTT). Recent activities have been the development of new solid-state devices and high-capacity systems. The application of solid-state techniques is being extended to systems of both analog and digital transmission, such as the 2700 multichannel telephone transmission system in frequency division multiplexing (FDM)-FM radio-relay system, an experimental 20-GHz PCM radio-relay system capable of 400 Mbits/s pulse transmission, and a guided millimeter-wave system of 800-Mbit/s transmission at 40-80 GHz. The microwave integrated circuit (MIC) is also becoming very important in utilizing these high-frequency regions, which should be a valuable resource in the future when a vast information transmission capability will be required.     

SiC and GaN transistors - is there one winner for microwave power applications?

Wide bandgap semiconductors show promise for high-power microwave electronic devices. Primarily due to low breakdown voltage, it has not been possible to design and fabricate solid-state transistors that can yield radio-frequency (RF) output power on the order of hundreds to thousands of watts. This has severely limited their use in power applications. Recent improvements in the growth of wide bandgap semiconductor materials, such as SiC and the GaN-based alloys, provide the opportunity to now design and fabricate microwave transistors that demonstrate performance previously available only from microwave tubes. The most promising electronic devices for fabrication in wide bandgap semiconductors for these applications are metal-semiconductor field-effect transistors (MESFETs) fabricated from the 4H-SiC polytype and heterojunction field-effect transistors (HFETs) fabricated using the AlGaN/GaN heterojunction. These devices can provide RF output power on the order of 5-6 W/mm and 10-12 W/mm of gate periphery, respectively. 4H-SiC MESFETs should produce useful performance at least through X band and AlGaN/GaN HFETs should produce useful performance well into the millimeter-wave region, and potentially as high as 100 GHz.     

CRLH-TL引领未来多频带小型化低损耗传输新变革

文章从左右手复合传输线(CRLH-TL)的机理出发,以传输特性为依据,阐述了其与传统平面传输线的相位响应区别,揭示了构成的左手传输线(LH-TL)的正向非线性及右手传输线(RH-TL)的负向线性传输特性导致的任意两个频率下四分之波长独特的响应及任意一个频率下的零度响应特征。根据这一原理,论证了不同于传统CRLH-TL而体现高选择性的T形双频带传输线和高设计灵活性的多频带传输网络的优越特性。上述不同结构的传输线分别应用于双频带威尔金森功分器和三频带的吉赛尔功分器两种无源器件的设计,证实了CRLH-TL具有实现多频带、小型化、低损耗传输的优异特性,为CRLH-TL引领未来小型化低损耗传输新变革提供了强有力的理论及实验依据。