铝钛共掺杂氧化锌透明导电薄膜的制备与性能研究

用直流磁控溅射法在玻璃衬底上成功制备出了铝钛共掺杂氧化锌(TAZO)透明导电薄膜,研究了溅射压强对TAZO薄膜的微观结构和光电特性的影响。研究结果表明,所制备的TAZO薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。当溅射压强为7.5Pa时,薄膜的最小电阻率为3.34×10-4Ω.cm。薄膜的可见光区平均透过率大于89%。溅射压强对薄膜的电阻率和微观结构有显著影响。     

氩氧比对磁控溅射梯度AZO薄膜光电性能的影响

采用磁控溅射法在单晶硅和石英玻璃衬底上制备梯度铝掺杂的氧化锌(AZO)薄膜。利用X线衍射(XRD)、霍尔效应测试和紫外可见光分度计等研究了不同氩氧比(体积比)对梯度AZO薄膜结构和光电性能的影响。结果表明,氩氧比可以改善薄膜的结晶质量,且对电学性能的影响较大。随着氩氧比的增加,晶粒尺寸减小,结晶度稍有下降,薄膜的电阻率却显著降低,当氩氧比为1∶0时,薄膜具有最低的电阻率为6.85×10~(-4)Ω·cm。此外,所有的梯度AZO薄膜在可见光区的透过率均达到80%。     

溅射压强对钛镓共掺杂氧化锌透明导电薄膜性能的影响

利用直流磁控溅射工艺在玻璃衬底上制备出了透过率高、电阻率较低的钛镓共掺杂氧化锌透明导电薄膜(TGZO)。研究了溅射压强对TGZO薄膜结构、形貌和光电性能的影响。研究结果表明,溅射压强对TGZO薄膜的结构和电阻率有重要影响。X射线衍射(XRD)表明,TGZO薄膜为具有c轴择优取向的六角纤锌矿结构多晶薄膜。薄膜的电阻率具有随着溅射压强的增大先减小,后增大的规律,在溅射压强为11Pa时,实验获得的TGZO薄膜晶格畸变最小,电阻率具有最小值1.48×10-4Ω.cm,透过率具有最大值94.3%。实验制备的TGZO薄膜附着性能良好,在400～760nm波长范围内的平均透过率都高于90%。     

射频磁控溅射制备ZnO∶Ga透明导电膜及特性

采用射频磁控溅射法在玻璃衬底上制备出高质量的镓掺杂氧化锌(ZnO∶Ga)透明导电膜,并对薄膜的结构和光电特性以及制备参数对薄膜性能的影响进行了研究.制备的ZnO∶Ga是具有六角纤锌矿结构的多晶薄膜,最佳择优取向为(002)方向.薄膜的最低电阻率达到了3.9×10-4Ω·cm,方块电阻约为4.6Ω/□,薄膜具有良好的附着性,在可见光区的平均透过率达到90%以上.     

Bi掺杂对溶胶-凝胶法制备Cu2ZnSnS4薄膜性能影响的研究

Cu₂ZnSnS₄(CZTS)薄膜太阳电池因其具有较佳带隙、组成元素丰富、理论转换效率高等优点,而被广泛研究。采用溶胶-凝胶法制备了Bi掺杂的CZTS薄膜,研究了Bi掺杂量对薄膜的微观形貌、物相结构和光电性能的影响。研究结果表明,所制备的薄膜为锌黄锡矿结构的CZTS。Bi元素的掺入对薄膜形貌影响很大,晶粒尺寸先增大后减小,薄膜更致密、更均匀。随着Bi掺杂含量增加,CZTS薄膜的光学带隙呈上升趋势,光电流响应先增大后减小。当Bi掺杂浓度为1%时,CZTS薄膜综合性能最佳。     

射频磁控溅射制备ZnO：Ga透明导电膜及特性

采用射频磁控溅射法在玻璃衬底上制备出高质量的镓掺杂氧化锌 (ZnO∶Ga)透明导电膜 ,并对薄膜的结构和光电特性以及制备参数对薄膜性能的影响进行了研究 .制备的ZnO∶Ga是具有六角纤锌矿结构的多晶薄膜 ,最佳择优取向为 (0 0 2 )方向 .薄膜的最低电阻率达到了 3 9× 10 -4Ω·cm ,方块电阻约为 4 6Ω/□ ,薄膜具有良好的附着性 ,在可见光区的平均透过率达到 90 %以上 .     

衬底温度对PLD法制备的ZnO:Ga薄膜结构和性能的影响

利用脉冲激光沉积法在石英衬底上制备了镓掺杂氧化锌(ZnO:Ga)透明导电薄膜,研究了衬底温度对薄膜的结构、表面形貌和光电性能的影响.研究表明:制备的ZnO:Ga薄膜是具有六角纤锌矿结构的多晶薄膜.随着衬底温度的增加,衍射峰明显增强,晶粒尺寸增大.当衬底温度为450℃时,薄膜的最低电阻率为8.5×10<'-4>Ω·cm,...     

低温生长ITO薄膜及其在太阳电池中的应用

氧化铟锡(ITO)同时结合了可见光范围内高透过率和高电导率等特性,被广泛应用于Si基薄膜太阳电池中。本文侧重研究了采用反应热蒸发(RTE)技术低温(约160℃)生长ITO透明导电薄膜过程中不同Sn掺杂含量对薄膜微观结构以及光电性能的影响。实验结果表明,随着Sn掺杂含量的增加,ITO薄膜微观结构稍有变化,薄膜的电子迁移率呈现先增大后减小的趋势,薄膜的光学带隙一定程度上呈现展宽趋势;对于较高的Sn掺杂含量,在低温条件下电离杂质散射和中性杂质散射成为影响电子迁移率降低的重要因素。经过薄膜生长优化,较佳的Sn掺杂含量为6.0wt.%,ITO薄膜电阻率为3.74×10-4Ω·cm,电子迁移率为47cm2/Vs,载流子浓度为3.71×1020cm-3,且在380~900nm波长范围内的平均透过率约87%。将其应用于结构为SS/Ag/ZnO/nip aSiGe:H/nipa-Si:H/ITO/Al的n-i-p型a-Si:H/a-SiGe:H叠层太阳电池,取得的光电转化效率达10.51%(开路电压Voc=1.66V,短路电流密度Jsc=9.31mA/cm2,填充因子FF=0.68)。     

靶基距对磁控溅射AZO薄膜性能的影响

以氧化锌铝陶瓷靶(98%ZnO+2%Al2O3,质量分数)为靶材,利用直流磁控溅射法在载玻片衬底上制备了AZO(ZnO:Al)薄膜样品,研究了靶基距(40~70 mm)对所制备AZO薄膜微观结构及光电性能的影响。结果表明:不同靶基距下制备的薄膜均具有明显的c轴择优取向;随着靶基距的增加,所制AZO薄膜的结晶质量变好,结晶尺寸变大,电阻率降低,禁带宽度变小,且所有薄膜在可见光区的平均透过率均在80%以上。当靶基距为70 mm时所制AZO薄膜的性能最好,其电阻率为8×10–4?·cm,在可见光范围内的平均透过率为82.3%,禁带宽度为3.42 eV。     

直流磁控溅射法低温制备ZnO:Ti透明导电薄膜及特性研究

利用直流磁控溅射法在室温水冷玻璃衬底上制备出了可见光透过率高、电阻率低的掺钛氧化锌(ZnO:Ti)透明导电薄膜.SEM和XRD研究结果表明,ZnO:Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向.厚度为437 nm薄膜的电阻率为1.73×10~(-4) Ω·cm.所制备薄膜具有良好的附着性能,薄膜样品在500～800 nm的可见光平均透过率都超过了91%.     

Enhanced photoluminescence properties of Cu-doped ZnO thin films deposited by simultaneous RF and DC magnetron sputtering

Copper (Cu)-doped ZnO thin films were grown on unheated glass substrates at various doping concentrations of Cu (0, 5.1, 6.2 and 7.5 at%) by simultaneous RF and DC magnetron sputtering technique. The influence of Cu atomic concentration on structural, electrical and optical properties of ZnO films was discussed in detail. Elemental composition from EDAX analysis confirmed the presence of Cu as a doping material in ZnO host lattice. XRD patterns show that the films were polycrystalline in nature with (002) as a predominant reflection of ZnO exhibited hexagonal wurtzite structure toward c-axis. From AFM analysis, films displayed needle-like shaped grains throughout the substrate surface. The electrical resistivity was found to be increased with increase of Cu content from 0 to 7.5 at%. Films have shown an average optical transmittance about 80% in the visible region and decreased optical band gap values from 3.2 to 3.01 eV with increasing of Cu doping content from 0 to 7.5 at% respectively. Furthermore, remarkably enhanced photoluminescence (PL) properties have been observed with prominent violet emission band corresponding to 3.06 eV (405 nm) in the visible region through the increase of Cu doping content in ZnO host lattice.     

Studies on the properties of sputter-deposited Ag-doped ZnO films

Ag-doped ZnO films were prepared by simultaneous rf magnetron sputtering of ZnO and dc magnetron sputtering of Ag on glass substrate. The influences of dopant content and substrate temperature on the properties of the as-grown films were investigated. Several analytical tools such as X-ray diffraction, spectrophotometer, atomic force microscopy, scanning electron microscopy and four-point probe were used to explore the possible changes in electrical and optical properties. The as-grown film has a preferred orientation in the (0 0 2) direction. As the amounts of the Ag dopant were increased, the crystallinity as well as the transmittance and optical band gap were decreased while the electrical resistivity increased. However, as the substrate temperature was increased, the crystallinity and the transmittance were increased. A small amount of Ag (<1 at%) lowered the resistivity by 30% with only a slight decrease in the visible transparency.     

缓冲层厚度对透明导电薄膜ZnO:Zr性能的影响

利用直流磁控溅射法在有ZnO:Zr缓冲层的水冷玻璃衬底上成功制备出了ZnO:Zr透明导电薄膜,缓冲层的厚度介于35～208 nm.利用XRD、SEM、四探针测试仪和紫外-可见分光光度计研究ZnO:Zr薄膜的结构、形貌、电光性能.结果表明,薄膜的颗粒尺寸和电阻率对缓冲层厚度具有较强的依赖性.当缓冲层厚度从35 nm增加到103 nm时,薄膜的颗粒尺寸增大,电阻率减小.而当缓冲层厚度从103 nm增加到208 nm时,薄膜的颗粒尺寸减小,电阻率增大.当缓冲厚度为103 nm时,薄膜的电阻率最小为2.96×10-3 Ω·cm,远小于没有缓冲层时的12.9×10-3 Ω·cm.实验结果表明,在沉积薄膜之前先沉积一层适当的缓冲层是提高ZnO:Zr薄膜质量的一种有效方法.     

Effects of the ZnO buffer layer and Al proportion on AZO film properties

To evaluate the influence of the ZnO buffer layer and Al proportion on the properties of ZnO: Al (AZO)/ZnO bi-layer films, a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties of the films are investigated. The carrier concentration and Hall mobility both increase with the increase of buffer layer thickness. However, the resistivity reaches the lowest at about 50 nm-thick buffer layer. The lowest resistivity and the maximum Hall mobility are both obtained at 1 wt% Al concentration. But the optical transmittance of all the films is greater than 80% regardless of the buffer layer thickness with Al concentration lower than 5 wt% in the visible region.     

Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ～550 nm and electrical resistivity value of 0.57 × 10^?4 Ω cm.     

AZO透明导电薄膜的结构与光电性能

采用射频溅射工艺制备了Zn1-xAlxO透明导电薄膜。通过XRD、UV透射和电学性能测试等分析手段,研究了Al浓度对薄膜的组织结构和光电性能的影响规律。结果表明:薄膜具有c轴择优取向,随着Al浓度的增加,(002)衍射峰向高角度移动,峰强度逐渐减弱,x(Al)为15%掺杂极限浓度。x(Al)为2%时,薄膜电阻率是3.4×10–4Ω.cm。随着掺杂量x(Al)从0增加到20%,薄膜的禁带宽度从3.34 eV增加到4.0 eV。     

Investigation of aluminum and gallium co-doped ZnO powders and their effects on the properties of targets

Aluminum and gallium co-doped ZnO (AGZ) powders were synthesized by the chemical co-precipitation method with the same Al doping concentration (3 at%) and different Ga doping concentrations (0–0.5 at%). The microstructure, lattice distortion and surface morphology of AGZ powders were investigated because the properties of targets were related to corresponding powders. Both AZO and AGZ targets were prepared by molding and atmospheric pressure sintering. The microstructure, morphologies, electrical properties and densification of sintered targets were also studied. The measured results showed that the grain sizes of AGZ powders are smaller than AZO powder, the former has a larger specific area, and the distribution of AGZ particles are more homogeneous, which are good for preparation of a high-density target. Besides, the extent of ZnO lattice distortion exhibits a downward trend with the increase of the Ga doping concentration. The AGZ target with appropriate concentration of Ga (0.3 at%) has the lowest resistivity of 2.518×10⁻³ Ω cm and the highest relative density of 99.2%. In general, the moderate Al–Ga co-doping proportion leads to finer grain size, lower resistivity, higher Hall mobility and higher sintered density.     

Effect of co-doping concentration on structural,morphological, optical and electrical properties of aluminium and indium co-doped ZnO thin films deposited by ultrasonic spray pyrolysis

In this work, we reported a chemical approach to prepare aluminium and indium co-doped ZnO thin films (AIZO) by ultrasonic spray pyrolysis. Film depositions were carried out on soda lime glass substrates at 425 °C by using a spray solution containing zinc acetate as zinc precursor, aluminium acetylacetonate as Al dopant source and indium (III) acetate as In dopant source. Physical properties such as structural, morphological, optical and electrical properties were studied with respect to the equal variations in co-dopants concentration (0.5–3 at%). X-ray diffraction patterns proved that films are poly crystalline with (002) preferential orientation. Scanning electron microscopy analysis showed that AIZO films grown like hexagonal nanopyramids, elongated grains and irregular trigonals. Optical transmittance ~85% and a minimum resistivity of 1.3×10⁻³ Ω cm, are achieved for films when co-doped with 1.5 at% of Al and 1.5 at% of In, confirm that AIZO films are suitable for transparent conductive oxide (TCO) applications.     

衬底温度对磁控溅射法制备的ZnO:In薄膜光电性能的影响

以粉末靶为溅射源,采用射频磁控溅射法在玻璃衬底上制备掺铟氧化锌(ZnO:In)透明导电膜.利用X射线衍射仪、原子力显微镜、霍尔测试仪,以及分光光度计等对不同衬底温度下生长的ZnO:In薄膜的结构、光电性能进行表征.结果表明,所有制备的ZnO:In薄膜均为六角纤锌矿结构的多晶膜,具有(002)择优取向.ZnO:In薄膜的电阻率随着衬底温度的升高先减小后增大,当衬底温度为100℃时,薄膜的最低电阻率为3.18×10~(-3)Ω·cm.制备的薄膜可见光范围内透过率均在85%以上.

Abstract：

Indium doped zinc oxide (ZnO : In) films were deposited on glass substrates by RF magnetron sputtering method using a powder target.The influence of the substrate temperature on the structure,optical and electrical properties was investigated by X-ray diffraction (XRD),atom force microscope (AFM),Hall measurement and optical transmission spectroscopy.The results show all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the (002) direction,and the grain size is about 22～29 nm.The conductivity of the ZnO : In films change with the substrate temperature,and the lowest electrical resistivity is about 3.18 × 10~3 Ω·cm for the samples deposited at substrate temperature 100 ℃.The transmittance of our films in the visible range is all higher than 85%.     

透明导电ZnO：Sn薄膜光学和电学性能的研究进展

纯ZnO电阻率高,电学性能不稳定,通过掺杂其他元素提高其光电性能,制备出高质量的ZnO薄膜是实现其应用的关键。文章从制备方法、掺杂浓度和退火等方面综述了Sn掺杂ZnO(ZnO:Sn)薄膜光电性能的研究进展,提出了降低ZnO:Sn薄膜电阻率和提高透光率的有效途径。