一种基于树增强朴素贝叶斯的分类器学习方法

树增强朴素贝叶斯(TAN)结构强制每个属性结点必须拥有类别父结点和一个属性父结点,也没有考虑到各个属性与类别之间的相关性差异,导致分类准确率较差。为了改进TAN的分类准确率,该文首先扩展TAN结构,允许属性结点没有父结点或只有一个属性父结点;提出一种利用可分解的评分函数构建树形贝叶斯分类模型的学习方法,采用低阶条件独立性(CI)测试初步剔除无效属性,再结合改进的贝叶斯信息标准(BIC)评分函数利用贪婪搜索获得每个属性结点的父结点,从而建立分类模型。对比朴素贝叶斯(NB)和TAN,构建的分类器在多个分类指标上表现更好,说明该方法具有一定的优越性。     

基于PLS的加权朴素贝叶斯分类测试算法

朴素贝叶斯算法是一种简单而高效的分类算法,但是它的条件独立性假设影响了其分类性能。通过放松朴素贝叶斯假设,可以增强其分类效果,但通常会导致计算代价大幅提高。文章提出了一种基于偏最小二乘的加权朴素贝叶斯分类算法,通过建立条件属性和决策属性之间偏最小二乘回归方程,把回归系数赋给对应的条件属性,作为相应的权重,从而在保持简单性的基础上有效地提高了朴素贝叶斯算法的分类性能。最后,通过在UCI数据集上的仿真实验,验证了该算法的有效性。     

一种基于遗传算法的数据抽样方法

朴素贝叶斯分类器是一种基于独立假设的贝叶斯定理的简单概率分类器,依靠精确的自然概率模型,在有监督学习的样本集中能获取得非常好的分类效果。本文以朴素贝叶斯分类器为基础,提出一种最优保存简单遗传算法为搜索方法,随机抽样分类测试作为适应性函数来设计实现实例选择算法。实验表明,该抽样方法在不降低朴素贝叶斯分类器精度的前提下明显降低计算代价,对部分数据集还可有效地提高分类器的分类精度。     

基于属性选择法的朴素贝叶斯分类器性能改进

为提高朴素贝叶斯(Naive Bayesian)分类器的分类准确率,对朴素贝叶斯属性选择算法及假设属性概率值先验分布中的参数设置问题进行分析,提出将属性先验分布的参数设置加入到属性选择的过程中,并研究当先验分布服从Dirichlet分布及广义Dirichlet分布情况下的具体调整步骤。以UCI数据库为例进行仿真实验,结果表明当先验分布服从广义Dirichlet分布时,该方法可提高分类的准确率,如Parkinsons数据集,效率可提升13.32%。     

面向非均衡数据类的朴素贝叶斯改进算法

针对朴素贝叶斯分类器存在对非均衡样本分类时,易将少数类样本分到多数类的问题,利用感受性曲线的性质和深度特征加权的思想,提出一种面向非均衡数据类的朴素贝叶斯加权算法(DA-WNB)。为了验证该算法对不平衡数据分类的有效性,实验结果以AUC、真正类率、整体精度为指标,仿真结果表明,该算法能提高少数类分类准确率(最高达60%),且能保持较高的整体精度。     

基于K-medoids聚类的贝叶斯集成算法

朴素贝叶斯分类算法由于其计算高效在生活中应用广泛。本文根据集成算法的差异性特征,聚类算法聚类点的选择方式的可变性,提出了基于K-medoids聚类技术的贝叶斯集成算法,朴素贝叶斯的泛化性能得到了提升。首先,通过样本集训练出多个朴素贝叶斯基分类器模型;然后,为了增大基分类器之间的差异性,利用K-medoids算法对基分类器在验证集上的预测结果进行聚类;最后,从每个聚类簇中选择泛化性能最佳的基分类器进行集成学习,最终结果由简单投票法得出。将该算法应用于UCI数据集,并与其他类似算法进行比较可得,本文提出的基于K-medoids聚类的贝叶斯集成算法(NBKME)提高了数据集的分类准确率。     

一种基于维规约的属性加权朴素贝叶斯算法

朴素贝叶斯算法是一种简单而高效的分类算法,但它的属性的条件独立性假设在现实中往往不成立,而且算法本身对高维数据不敏感,如何提高高维数据的分类性能是一个重要的问题.通过确定权重系数进行算法改进,用改进的算法对基于条件信息熵、主成分分析和独立成分分析处理的数据进行分类,并分析性能.     

基于PCA和非线性SVC的小数据人脸识别

为了提高小数据集下人脸识别的准确率,提出基于主成分分析(PCA)算法和非线性支持向量机算法的算法分类器。同时为了进一步优化该算法分类器,提出利用网格搜索法改进非线性支持向量机SVC算法。改进后的SVC算法能自主寻找最优参数,使得整个学习分类器处于性能最优状态。经实验证明组合PCA和改进后的SVC学习分类器不但有效提高了人脸识别的准确率,并且节省人工选取特征的时间成本。     

基于ICA的多维贝叶斯分类器

多维贝叶斯分类器是处理多维分类问题的概率图形模型,其中属性变量可决定一个或多个类变量。文中针对属性变量维数较高和信息冗余问题,采用Fast ICA算法对属性变量进行降维,从而将高维属性变量约减为能较完整描述数据信息的低维属性变量。然后根据约减后的属性变量构建多维贝叶斯分类器;最终,通过理论分析得到基于ICA的多维贝叶斯分类器的性能较好。实验结果表明,对3组基准数据集的分类,基于ICA的多维贝叶斯分类器相比于其他算法具有较高的分类准确率。     

基于增量贝叶斯的双偏振气象雷达降水粒子分类方法

面对降水粒子分类过程中可能存在的样本数不足,样本质量不高的问题,提出一种基于增量贝叶斯的双偏振气象雷达降水粒子分类方法。该方法首先处理有标签的训练数据集,获取属性节点和类节点之间的条件概率表构建朴素贝叶斯分类器;接着使用朴素贝叶斯分类器分类无标签数据,判断类置信度值后将符合条件的数据追加到训练数据集中,最后修正朴素贝叶斯分类器完成增量学习,得到增量贝叶斯分类器实现降水粒子分类。增量贝叶斯分类器不仅能够增加有效的数据样本,还能够及时更新分类器从而提高其泛化性和适应性,分类结果的准确性也得到了一定的改善。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.