基于C6455 DSP的消像旋实时图像处理系统设计

针对通用计算机消像旋处理实时性差和性价比低的特点,提出了采用C6455 DSP芯片为核心处理器,研究设计了基于C6455 DSP的消像旋实时图像处理系统,实现了图像数据的采集、消像旋处理、输出等一系列功能。结果表明,该系统实时性好,图像显示效果良好,并已成功应用于某光电系统的消像旋处理中。     

反射式探测系统中数字消像旋的简易方法

当探测器置于旋转平台下方时,由于平台的旋转,在探测器像面上接收到的像将按一定规律作旋转运动.根据系统基本结构,分析了成像系统的光学传输成像模型,提出了数字消像旋的简易方法,对图像处理系统的实际输出结果进行处理,而不需要采用光学消像旋和电子图像消像旋等方法,提高了系统探测处理的实时性,降低了系统设计的难度,具有较强的实用性.     

高速超分辨率图像处理系统

为了对遥感图像进行实时脱机的超分辨率增强处理,设计了一种基于现场可编程逻辑门阵列(FPGA)和数字信号处理器(DSP)的超分辨率图像处理系统,系统在视频预处理部分利用FPGA来实现对视频的降采样处理,在超分辨率处理部分分别用FPGA和DSP来完成对视频源的两种经典超分辨率算法的硬件实现.达到了对视频图像进行高速实时超分辨率处理的目的.     

基于FPGA和DSP的图像消旋系统的优化设计

给出了一种FPGA和DSP为主架构的实时视频图像处理平台。其中,以EP20K600EBC652-2X为核心处理器完成了实时图像消旋系统设计。提出一种有效的实时消旋算法。该平台利用旋转算法将原图像反向旋转相应的角度,它将抖动旋转的图像反向旋转相应角度,再用双线性插值方法进行重采样,达到了实时稳像的良好效果。阐述了这一图像消旋的算法原理及其优化设计,介绍了DSP以及FPGA的相关软硬件设计技术。     

基于SDRAM的Bayer格式图像插值算法硬件设计

针对传统的双线性Bayer格式图像彩色恢复算法效果不理想,提出了一种新算法,设计了一种将其用FPGA实现的硬件方案。改进算法应用梯度变化来增加通道间的相关性,提高线性插值的效果,根据探测器数据输出格式不满足Bayer插值算法要求,设计了一种基于SDRAM,运用乒乓操作和流水线等技术的硬件处理新机制。整个系统采用一片可编程门阵列(FPGA)作为硬件设计载体,使用Verilog-HDL硬件描述语言并采用自上而下的模块化设计对整个系统进行硬件描述。试验表明,算法在硬件上工作正常,实时输出的彩色图像在PSNR和目视方面均优于双线性插值算法。基本满足了系统在实时性和图像质量方面的要求。     

实时电子图像消旋系统

给出一种用数字图像处理方法实现的实时图像消旋系统的硬件结构及其与之相适应的快速算法，实验及实际应用结果表明，用这种方法实现的图像消旋系统不但能克服原有光学消像旋系统的不足，而且还具有体积小、成本低、可靠性高等优点．     

红外图像预处理设计及非均匀性算法应用

在红外图像信息处理中,首先要对采集到的图像信号进行预处理。以SOFRADIR公司的320×240元红外探测器芯片为例,介绍基于DSP处理器和FPGA的图像预处理系统的硬件设计,以及图像预处理非均匀性算法的研究。在图像预处理系统的硬件平台上,通过采用非均匀性算法中的两点校正法,对所采集到的红外图像信号进行预处理,取得了较好的效果,证明了硬件系统的合理性和算法设计的可行性。     

一种基于FPGA的图像观瞄系统消像旋设计

针对现代武器观瞄系统显示图像旋转干扰操作手瞄准的问题,提出了一种基于FPGA的消像旋设计方案。该方案根据从平台姿态传感器获得的旋转姿态信息,对显示图像进行反向旋转,从而消除显示图像的旋转,方便操作手瞄准。该方案同时扩展了无极变焦功能,解决了操杆与显示分辨力不一致的问题,提高了武器观瞄系统的瞄准精确度。     

一种红外图像伪彩色显示算法及其硬件设计

介绍了红外图像伪彩色显示的原理、编码算法和硬件组成。设计了三种由暗(黑)到明(白)的RGB映射函数与红外图像的温度由低到高相对应,实现了彩色层次分明,图像细节突出,更适合人眼观察的伪彩色图像显示。最后通过FPGA+TMS320C6416DSP+SAA7199B数字视频编码芯片,实现了实时可变的伪彩色变换算法和视频编码输出,验证了系统软硬件的有效性。     

红外实时图像增强的硬件设计与实现

根据红外图像特点,提出了基于FPGA＋SRAM的硬件实时图像处理结构.该硬件设计包含4个主要模块：视频处理模块、FPGA模块、图像存储模块和DA转换及视频合成模块.FPGA是该系统的核心部分,能够实现2D-TDI、图像锐化和非均匀性校正等算法;SRAM阵列是暂存实时图像的,用于算法的实现;FPGA配置FLASH存放FPGA的配置程序;完成硬件调试工作后,尝试实现了部分图像增强算法.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its