自适应杂波抑制技术在雷达中的应用

动目标显示(MTI)技术是雷达在杂波环境中发现运动目标的有效手段。首先讨论了雷达信号处理中常用的自适应动目标显示技术,即在多杂波环境下的自适应杂波抑制技术。然后针对雷达杂波抑制中常用的级联MTI滤波器,提出了一种新的设计方法,即采用时变加权原理,通过对动杂波速度估值,实现对运动杂波抑制滤波器权值的优化。最后给出了这2种杂波抑制级联型MTI的工程实现。     

X波段地面PD雷达解距离模糊算法设计

雷达信号处理的根本目的是将在于杂波中的动目标提取出来，为此必须抑制地杂波和动杂波，同时保证动目标信号输出。本文首先从杂波抑制着手，研究X波段测高雷达脉冲重复频率的设计，并在此基础上设计一种解距离模糊的展开算法。     

X波段测高雷达展开法解距离模糊算法设计

雷达信号处理的根本目的是从杂波中提取运动目标，为此必须抑制地杂波和动杂波，同时保证运动目标输出。本文首先从杂波抑制着手，研究X波段测高雷达脉冲重复频率的设计，在此基础上设计一种解距离模糊的展开算法。     

X波段测高雷达展开法解距离模糊算法设计

雷达信号处理的根本目的是从杂波中提取运动目标，为此必须抑制地杂波和动杂波，同时保证运动目标输出。首先从杂波抑制着手，研究X波段测高雷达脉冲重复频率的设计，在此基础上设计一种解距离模糊的展开算法。     

X波段测高雷达PD体制论证

雷达信号处理的根本目的是从杂波中提取运动目标，为此必须抑制地杂波和动杂波，同时保证运动目标输出。本文首先从杂波抑制着手，研究x波段测高雷达总体的设计，在此基础上确定PD体制。     

基于STFAP的MIMO雷达运动目标参数估计的CRB研究

多发多收(Multiple-Input Multiple-Output, MIMO)雷达在目标检测、参数估计等方面具有显著优势。目标参数估值的CRB被证明是系统设计和空时自适应处理(STAP)性能分析中的有力工具。该文针对采用频分正交信号的共置天线MIMO雷达,首先建立基于MIMO雷达的目标和杂波空-时-频信号模型;在此基础上,研究基于空-时-频自适应处理(STFAP)的MIMO雷达地面运动目标角度和多普勒参数最大似然估值的克拉美-罗界(CRB);最后通过CRB性能仿真分析验证了MIMO雷达STFAP有效消除动目标检测盲速,提高目标参数估计精度的优势。     

自适应MTI滤波器的设计

讨论雷达信号处理中的自适应动目标显示技术,即雷达回波信号中的运动杂波抑制问题.针对常见的高斯型功率密度函数的运动气象杂波,寻求一种基于最小功率准则的自适应动杂波抑制滤波器的设计方法及实现技术.在分析的基础上做了有关的仿真,仿真结果表明,该方法运算量小、易于实现,对运动杂波具有良好的抑制效果.     

一种X波段PD雷达信号处理系统的设计

对于X波段地面雷达，要使其在云雨等动杂波环境下的目标检测能力达到指标要求，信号处理机的合理设计非常重要。地面雷达PD方案至今尚无确定的形式。本文在研究雷达信号处理技术和算法的基础上，设计了一种地面PD雷达信号处理系统方案。     

机载外辐射源雷达空时处理中距离徙动校正算法研究

空时处理是实现机载外辐射源雷达杂波抑制和目标能量积累的有效手段。然而,外辐射源雷达目标信号微弱,需要在长相干处理时间(CPI)下进行空时处理,以提高目标信噪比。长CPI下,目标将出现距离徙动,造成积累增益损失,降低系统威力。针对上述问题,该文根据外辐射源雷达特点,提出将Keystone变换与3DT-SAP算法有机结合的距离徙动校正算法。该算法计算效率高,具有实时处理的潜力,能在抑制杂波的同时校正距离徙动,且校正过程信号能量损失小。仿真表明,该算法能充分抑制杂波,且对不同速度、不同强弱的目标进行有效的距离徙动校正,是一种高效、高性能的机载外辐射雷达距离徙动校正算法。     

相参捷变频雷达接收机及动目标处理技术

在现代雷达技术的发展中,相参捷变频雷达因其目标分辨能力和在电子对抗战中的优势而越来越多地被应用。文中介绍了三种相参捷变频雷达接收机的体制,并分析了各自的原理以及适用的应用场景。针对该体制在杂波抑制上的难题,提出一种基于最优输出信杂比的杂波滤波器的设计方法,对回波信号进行杂波抑制以实现动目标处理。展示了由原理样机进行的外场实验,通过对外场实验获取得真实数据进行分析,验证了系统的相参性和动目标处理的有效性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.