波导阻抗带宽与缝隙导纳关系研究

本文从谐振阵等效网络出发,探索了缝隙波导谐振阵实现理想阻抗匹配的导纳特性,为波导谐振阵的超宽带设计提供了新思路。改进了波导并联缝隙的等效电路,首次实现缝隙导纳特性的单参数表征,创新提出了不同单元间距与单元数缝隙波导阵实现最大带宽的导纳特性分析方法,为波导缝隙阵带宽的优化设计提供了理论依据,建立了传统谐振阵非过载时的最大带宽公式。同时利用该方法开展了矩形波导谐振阵缝宽对带宽的影响研究,通过全波模型的仿真验证,证明了分析方法的有效性。     

波导缝隙谐振阵带宽与缝隙特性关系研究

该文结合波导缝隙天线等效电路和辐射缝隙导纳特性,分析了并联辐射缝特性对波导谐振阵方向图带宽的影响,推导出天线方向图理想带宽所需要的缝隙特性.该结果为展宽谐振阵带宽提供了一种思路,为宽带波导谐振阵的设计提供有益参考.     

具备阻抗和低副瓣宽带特性的脊波导缝隙阵列天线设计

设计了一种16×8脊波导缝隙阵列天线,线阵阵面分成两个子阵,馈电采用同轴馈电与耦合缝隙馈电结合的两级馈电方式,辐射缝隙分布为泰勒分布。天线设计采用近场诊断方法和阻抗过载技术进行优化。天线实物加工测试结果表明,天线在X频段驻波带宽(VSWR≤1.5)为7.3%,最低副瓣达到-25.8 dB,副瓣电平带宽(SLL≤-19 dB)为6.2%。与已有文献相比,该天线同时具备阻抗宽带特性和低副瓣宽带特性,工作频带内具有增益均大于16 dBi的高增益特性。     

宽带单脊波导缝隙天线的设计

根据传输线方程推导了单脊波导辐射缝隙有源导纳的计算公式,结合三维电磁仿真软件HFSS提取了天线阵列中辐射缝隙的有源电导,设计了一个8元单脊波导缝隙线阵,实测结果表明,副瓣为-23.61dB,VSWR≤2时的相对带宽为8%,约为矩形波导缝隙天线的2倍。     

宽频带膜片激励波导窄边非倾斜缝隙阵天线

文中提出一种新型宽频带低交叉极化的波导缝隙线阵设计，辐射单元是由波导内膜片激励的窄边非倾斜缝隙。线阵划分成多个子阵，并由功分器馈电。设计、加工了一个16单元X波段的均匀直线波导缝隙阵，测试得到7．2％阻抗带宽（VSWR≤1．5），天线辐射方向图最高副瓣电平低于-11．8dB，并且具有低于-39dB的交叉极化特性。     

矩形波导窄边倾斜缝隙天线阵的设计

介绍了一种矩形波导窄边斜缝泰勒线阵设计的方法.简要阐述了矩形波导窄边缝隙天线阵列的相关理论,并使用HFSS软件对单个缝隙结构,无限阵列环境下缝隙单元的导纳参数进行数值仿真.然后按照仿真获得的等效谐振电导曲线,运用泰勒线元法综合求出非谐振式48元波导窄边缝隙线阵,并对整个线阵进行了仿真和实测.仿真和实测结果表明,该天线阵列具有低副瓣、宽带宽、高增益等特点,并且实测结果与仿真吻合良好.     

小型化缝隙加载圆极化及宽带微带贴片天线设计

提出了一种十字形缝隙加载的小型宽带及圆极化微带贴片天线的设计方法。该天线通过在方形贴片上加载一个大尺寸的十字形缝隙实现天线的尺寸缩减,介质基片采用由FR4和空气层组成的层叠结构,在缝隙中嵌入L型枝节,只需通过调整枝节上同轴线馈电点的位置来获得圆极化或宽带阻抗匹配。ANSYS HFSS仿真分析表明,天线的圆极化带宽（AR≤3 dB）为1.7%,阻抗带宽（VSWR≤2）为5.8%,天线在宽带范围内具有稳定的增益,峰值增益为7.8 dB,同时贴片面积缩减了52.3%。改变馈电点的位置可调节两个谐振频率使天线阻抗带宽达到9.4%,比传统的微带贴片天线阻抗带宽提高了114%。     

一种展宽波导缝隙阵列天线驻波带宽的新方法

辐射缝隙导纳和耦合缝隙阻抗的频率特性,是影响缝隙阵列天线驻波带宽的主要因素。以改善整个缝隙阵阻抗匹配频率特性为出发点,提出了一种展宽波导缝隙阵列天线驻波带宽的新方法,即选择合适的辐射缝隙的总导纳常数。仿真分析表明,改变后的缝隙阵列天线的驻波带宽有了较大改善,其与理论分析的结果是一致的。     

宽带单脊波导缝隙天线阵设计

给出了一种新型脊波导宽边缝隙天线阵设计,天线阵被分成几个子阵形式,通过膜片的激励方式,由一个半高波导功分器馈电.设计、加工了一根16元波导天线阵,测试得到11.3%的阻抗带宽(VSWR＜1.5),天线辐射方向图最大副瓣电平低于-12 dB,具有低于-40 dB的交叉极化特性.     

小型波导缝隙天线阵的改进设计方法研究

利用传输线理论构造负载阻抗的近似计算公式,采用数值逼近法直接计算阵列中的缝隙归一化导纳,从而可以在Elliott波导缝隙天线阵设计过程中避免使用感应电动势法和矩量法,进而可以提高设计速度.最后采用该方法设计了工作频率为9.375GHz的缝隙阵结构参数,仿真结果表明改进设计方法比较有效.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.