VGA级大屏幕印刷型FED视频显示系统的研制

论述印刷型场致发射显示器驱动系统的工作原理,介绍了采用DVI、VGA视频接口技术、专用集成图像灰度调制和集成扫描电路接口技术以及FPGA控制等技术研制出了能驱动显示VGA分辨率的印刷型FED视频显示系统。该系统能显示各种彩色视频图像,图像亮度已达400cd/m2、对比度达1 000:1,电路灰度等级达256级,有效显示对角线尺寸为635 mm(25 in)。     

HDMI视频接口技术在彩色FED中的应用

简单介绍了高清晰多媒体接口 HDMI的接口规范.着重论述了Si19023芯片内部功能结构、工作时序以及在FED平板显示器件视频驱动电路中的应用.提出了基于Si19023的硬件电路设计方案以及寄存器的设置.此电路方案已在63.5 cm彩色FED驱动系统中使用,为系统提供优质的数字视频源.显示分辨率最高支持UXGA.采用HDMI数字视频接口技术研制出了能驱动显示VGA分辨率的印刷型FED视频显示系统.该样机能显示各种彩色视频图像.图像亮度已达400 cd/m、对比度达1 010:1,电路厌度等级达256级.有效显示对角线尺寸为63.5 cm.     

场致发射显示器新型图像驱动技术的研究

在分析和研究了原有灰度调制驱动电路以及低逸出功印刷型场致发射显示器(Field emission display, FED)的显示特性之后,提出了新型子行驱动图像还原技术.子行驱动技术能应用于不具备存储特性的显示器中,具有更小缓存容量需求和更高显示时间利用率等优点,更适合于场致发射显示器的驱动显示.详细介绍了新型图像驱动系统的工作原理及实现方案,同时为了解决子行驱动法对后级驱动芯片工作速度要求高的问题,在降低图像灰度数据位数的同时应用误差扩散法来实现真彩图像的还原.该技术已成功应用于FED驱动系统中并研制出彩色FED显示器样机.该样机能显示彩色视频图像,对角线为63.5 cm (25 in),亮度达300 cd/m2,对比度为800:1.     

PDP数据驱动模块STV7610A及其应用

介绍了专用于平板显示的数据电极驱动芯片STV7610A的结构特点、引脚功能和工作原理 ,给出了STV7610A在PDP显示系统中的应用方法。由于STV7610A能为PDP数据电极提供高压 ,因而具有较好的图像显示效果。     

大屏幕FED集成驱动电路的研制

论述集成场致发射显示系统的工作原理,主要包括了数字视频图像的转换和处理、视频数据的传输、列灰度驱动集成HV632PG和行集成驱动器STV7697芯片的接口电路以及FPGA控制技术等。采用集成FED驱动系统研制出了彩色FED显示器样机,首次用于大屏幕低逸出功型印刷式场致发射显示器,能显示彩色视频图像。FED驱动电路的集成化大大地降低电路结构的复杂性,使整个驱动电路的稳定性提高,厚度变薄、重量减轻。样机亮度已达200 cd/m2、对比度达600∶1,显示分辨率为480×240,电路灰度等级达256级,有效显示对角线尺寸为63.5 cm(25 in)。     

基于FPGA的实时视频图像采集与显示系统的设计与实现

主要针对目前视频图像处理发展的现状,结合FPGA技术,设计了一个基于FPGA的实时视频图像采集与显示系统。系统采用FPGA作为主控芯片,搭载专用的编码解码芯片进行图像的采集与显示,主要包括解码芯片的初始化、编码芯片的初始化、FPGA图像采集、PLL设置等几个功能模块。采用FPGA的标准设计流程及一些常用技巧来对整个系统进行编程。重点在于利用FPFA开发平台对普通相机输出的图像进行采集与显示,最终能在连接的RCA端口显示屏显示。     

大屏幕低逸出功印刷型VGA级FED显示系统的研制

采用独有的低成本大面积低逸出功FED阴极材料及其阴极浆料研制出大面积印刷式FED,具有自主知识产权,在国内外属首创.论述印刷型场致发射显示器驱动系统的工作原理,介绍了采用DVI、VGA视频接口技术、专用集成图像灰度调制和集成扫描电路接口技术以及FPGA控制等技术.VGA分辨率的印刷型FED视频显示系统能显示各种彩色视频图像,图像亮度已达410 cd/m2、对比度达1010:1,电路灰度等级达256级,有效显示对角线尺寸为63.5 cm(25 in).     

STV7610在场致发射显示驱动电路系统中的应用

论述场致发射显示(FED)驱动系统的工作原理,介绍了STV7610的性能以及作为列图像驱动器的接口电路及其现场可编程门阵列(FPGA)的控制技术等。采用STW610芯片和位帧显示技术研制出了FED显示器驱动电路。图像亮度达 160 cd／m2、对比度达300:1,显示分辨率为320×240,电路灰度等级达256级,有效显示对角线尺寸为25英寸。     

低逸出功可印刷型彩色FED驱动系统的研制

论述低逸出功可印刷型场致发射显示系统的工作原理,介绍了数字视频图像的转换和处理、视频数据的传输、列灰度驱动集成HV632PG和行集成驱动器STV7697芯片的接口电路以及FPGA控制技术等.研制出了彩色FED显示器样机,首次用于大屏幕低逸出功型印刷式场致发射显示器,能显示彩色视频图像.样机亮度已达200 cd/m2、对比度达6001,显示分辨率为480×240,电路灰度等级达256级,有效显示对角线尺寸为25 in.     

基于PDP驱动技术的行扫描芯片浪涌电压抑制方法

分析了等离子体显示器中行扫描芯片的浪涌电压产生机理。结合浪涌电压产生机理从PDP驱动技术的角度提出抑制浪涌电压的理论方案,并以实验室PDP模组为实验载体,通过修改控制板驱动代码来实现该方案。通过实测新方案的波形,并观察PDP屏显示的静态图像与动态图像,验证了该方案可以有效抑制行扫描芯片的浪涌电压。该方案使得芯片的制造成本降低,从而缩减了整个PDP系统的成本。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-