在线式三进三出交流变频不间断电源的设计

针对传统UPS(不间断电源)的局限性,提出了一种用DSP芯片TMS320F240实现的变频UPS电源,介绍了其工作原理及系统硬件设计.变频UPS具备传统UPS和变频器的双重功能,适用于交流异步电动机负载的特种工业应用电源.对于不允许停电的电动机负载,选择这种变频UPS比选择普通UPS具有更高的性价比.     

5KVA机车空调电源的设计与研究

本文提出了一种以87C196MC为控制核心,以IGBT和IPM为开关器件的5KW三相机车空调电源的设计方案,介绍了该变频电源的硬件结构、工作原理和软件设计,实验结果表明,该电源达到设计指标要求,工作稳定可靠.     

航空交流电源系统仿真器的设计

介绍一种航空交流电源仿真器的设计，它采用微处理器通过SPWM控制，为了仿真航空电源的三相交流电源系统的正确信号与故障时的信号，是一个电压与频率变化的信号发生器。论文给出了变压变频控制方法．硬件结构和软件流程。该仿真器实现了多路的变频变压电源信号的控制。     

新能源微电网综合实验平台及教学研究

新能源微电网综合实验平台集成了多种分布式发电与储能装置,其结构灵活多变,可满足不同运行方式的需求.本文介绍了该实验平台系统架构与硬件组成,以及集中式管理系统,并选取三类代表性运行模式进行介绍.借助该综合实验平台设计了分布式电源运行特性验证、并网逆变器控制策略设计、并离网状态切换、运行优化策略验证等实验,通过教学实践增强学生对分布式电源、微电网系统的认知与理解.     

基于数字变频处理的GPS/BDS双模捕获

全球定位系统(Global Positioning System,GPS)与“北斗”定位导航系统(Beidou Navigation Satellite System,BDS)的双模导航能够提高定位稳定性与精确性,但通常在前端硬件设计中需要建立双通道对GPS和BDS射频信号分别进行处理,极大地增加了硬件设计复杂度以及功率的消耗。针对双通道硬件设计的复杂性问题,提出了在Matlab环境下对GPS/BDS双频信号进行数字变频处理的方法。该方法将硬件中的变频功能在软件中实现,从而降低了硬件设计的复杂度且保证了算法与不同全球卫星导航系统(Global Navigation Satellite System,GNSS)以及前端硬件的兼容性。实验结果表明,在不同的单通道硬件设计下,利用该方法能够成功在软件中消除与L1或B1的频偏得到捕获信号,并捕获到GPS/BDS可见卫星信息。     

变频电源中APFC装置的设计

文章给出了变频电源电网端有源功率因数校正（APFC）装置的设计,该装置使用控制芯片UC3854B来实现,文中详细介绍了UC3854B的内部结构和工作原理以及主电路和控制电路的设计。实验证明,这种带有源功率因数校正装置的变频电源具有功率因数高、电压稳定性好等优点。     

红沿河核电站3、4号机组RGL电源柜的设计与调试

红沿河3、4号机组RGL电源柜的设计,参考了秦山二期和大亚湾核电站棒控系统电源柜的设计特点,采用“一带四”方案,即一组电源机箱控制四台CRDM的运行.文章对RGL系统进行了描述,还介绍了RGL电源柜的功能、工作原理和硬件设计,并采用NI虚拟仪器采集信号和进行系统调试.实验结果表明,设计的电源柜功能正常、电流波形稳定,达到了设计要求.     

基于DSP的三相航空中频电源的设计

文中介绍了基于DSP的115 V/400 Hz三相中频电源的设计原理和设计方法,详细阐述了移相全桥变换器和周波变流器工作原理及控制方法,给出了系统的总体结构和功率主电路图.变频电源采用移相谐振控制技术、周波变流型高频环节逆变技术和基于DSP数字控制技术,使整机开关最大程度地实现了软开关.实验结果表明,该变频电源设计合理,具有较高可靠性和功率密度.     

高可靠性无人机地面变频电源设计

本文就SPWM技术在无人机地面变频电源中的应用情况作了介绍,就有关设计和使用中的工程技术问题进行了初步探讨,提出了电源噪声抑制,提高电磁兼容性和抗干扰性以及可靠性的工程实现方法,解决了一机多出和发电机转速模拟问题。首次成功地将SPWM技术应用到小型无人机地面变频电源中,大大提高了变频电源的可靠性,为无人机变频电源开拓了广阔的前景。     

铝电磁铸轧专用变频电源控制系统的设计与实现

本文针对铝电磁连续铸轧系统的控制要求，介绍了铸轧特种电源控制系统中电源变频装置的研制过程，其中包括硬件电路设计和软件控制策略。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.