刍议电力工程建设项目管理

在电力工程建设中,项目管理是其核心组成部分。做好项目管理工作能有效促进电力工程中各个项目有序进行,提升电力工程建设的质量。项目管理主要内容是电力工程建设项目的前期定位、项目进程管理以及项目维护管理等,并利用电力工程项目管理来有效提升输变电工程项目的社会效益和经济效益,最终促进电力企业的进步以及发展。文中研究了电力工程建设项目管理,提出了相关的建议。     

对电力工程项目质量管理的探究

在我国社会经济高速发展的推动下,生产生活对电力的需求日渐增大。这促使我国近年来的电力工程项目建设进入了快速发展的时期。电力工程项目的质量是保证后期输供电安全稳定的前提,因此在电力工程项目建设中必须严格要求加强质量管理。通过分析阐述在电力工程项目质量管理工作中需要重点控制的因素及其相应的管理措施,为建设优质的电力工程项目提供保障。     

浅析电力工程项目质量管理

随着我国社会主义建设进程不断加快,生产、生活对电力的需求量日益增长,使得我国电力工程项目建设进入高速发展的阶段。电力工程项目质量是影响安全、稳定供电的关键因素,因此在电力工程项目建设过程中必须加强项目质量管理。本文将简要阐述加强电力工程项目质量管理的重要性,并提出了加强质量管理的有效措施,旨在为构建高质量电力工程项目提供指导。     

电力工程项目物资质量管理及其应用研究

电力工程项目的物资管理对于其项目工程的正常进行有重要作用,也是电力工程项目管理的重要内容,在进行电力工程鲜美的物资管理中,要从物资采购、使用、验收等各个方面进行相应的控制,根据电力工程项目物资管理的现状,采取相应的管理控制措施,提高物资管理的水平。本文通过对电力工程项目物资质量管理的现状分析,提出了相应的物资质量管理的应用措施,旨在促进电力工程项目中物资质量管理的水平。     

对加强电力工程管理的措施研究

随着我国电力行业的发展,电力工程的管理也受到了人们越来越多的关注。为了满足社会对电能的需求,电力企业必须加强电力工程的管理。因此电力企业要做好安全管理工作,加强电力工程项目管理建设,从而做到电力工程的社会效益和经济效益的统一。本文主要探讨了电力工程管理中存在的问题并提出了加强电力工程管理的措施。     

对电力工程项目建设管理模式研究

近几年来,国家社会经济迅速发展,电力资源的需求量不断的增长,相应的电力工程也大量投入到实际的生产中,电力工程项目建设的管理与到人们生活息息相关,电力工程建设质量关系着国家繁荣富强和人们的生命安全密切,因此保证电力工程项目建设的质量尤为重要,本文就电力工程项目建设管理模式进行了研究,为以后电力工程的更好发展提供有利的支持。     

全面预算控制下110kV昌教输变电工程项目的造价控制措施分析

随着经济的不断发展与进步,带动了电力工程项目的飞速发展,同时与电力工程项目密切相关的电力工程项目的造价管理问题成为当今社会的热门话题,变电工程项目造价的控制问题将会给国家经济的可持续性发展带来巨大的作用,本文主要研究了佛山市110kV昌教输变电工程项目造价控制,介绍了电力工程项目造价控制的主要内容、简单论述了电力工程项目造价控制的四个阶段、分析了影响电力工程项目造价的主要原因以及给出了有效控制电力工程项目造价方面的措施。     

电力工程项目管理模式创新

电力工程对人们的生活和社会发展起到重要的影响,因此,电力工程在社会各行各业中的地位越来越突出。面对日益激烈的社会竞争,为了切实推动电力企业长期稳定的发展,必须提高电力工程的管理水平。在高效合理地管理下,才能实现电力工程良性循环,推动电力工程的健康发展。因此,文本深入分析了当下电力工程管理中存在的主要问题,并提出了对电力工程项目管理模式的创新措施。     

加强电力工程项目管理的几点看法

随着我国社会经济的持续发展,我国电力工程的兴建速度也在稳步加快,电力工程作为积极推动我国经济飞速发展的主要力量,对我们的生产生活都有着十分重要的影响。所以,强化电力工程项目的管理和控制工作尤为重要。本文简明扼要的介绍了提高电力工程项目安全管理的策略,加强电力工程项目质量管理的建设性措施,控制电力工程项目管理工期的措施和加强对电力工程项目投资管理的举措,并提出了一些作为参考的意见。     

加强电力工程项目管理的几点看法

随着我国社会经济的持续发展,我国电力工程的兴建速度也在稳步加快,电力工程作为积极推动我国经济飞速发展的主要力量,对我们的生产生活都有着十分重要的影响。所以,强化电力工程项目的管理和控制工作尤为重要。本文简明扼要的介绍了提高电力工程项目安全管理的策略,加强电力工程项目质量管理的建设性措施,控制电力工程项目管理工期的措施和加强对电力工程项目投资管理的举措,并提出了一些作为参考的意见。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.