一种多域复合调制的雷达灵巧干扰新方法

为满足复杂电磁环境下雷达抗干扰训练需求,针对线性调频脉冲压缩雷达信号,设计了一种基于多域复合调制的雷达灵巧干扰新方法。这种方法通过对接收雷达信号在时域上的噪声卷积、频域上的固定偏移和功率域上的增益控制形成干扰,可使目标回波经匹配滤波处理后产生延迟时间超前于真实目标的显著假目标和一定距离范围内的压制噪声,仿真结果表明这种干扰能够达到"隐真示假"的灵巧干扰效果,对雷达干扰设备的理论研究和装备研制具有积极的作用。     

基于速度拖引的灵巧噪声干扰设计与仿真

数字射频存储技术实现兼具欺骗干扰和噪声干扰特点的灵巧噪声干扰,其应对旁瓣消隐和旁瓣对消等雷达抗干扰措施的效果不佳。为解决该问题,文中在分析现代雷达有源噪声干扰工作机理的基础上,结合目标回波航迹相关技术,设计了一种将速度拖引欺骗和卷积调制灵巧噪声相结合的新型干扰信号形式,以增强兼具欺骗和噪声压制干扰的灵巧噪声 干扰效果和应对抗干扰措施的能力。仿真实验验证了该干扰信号形式的有效性。     

直扩灵巧干扰技术的理论分析

直扩技术是一种在通信领域获得广泛应用的主要通信抗干扰技术。由于扩频原理的作用．常规的非相关压制干扰方法往往效果不佳。而自相关干扰方法难以解决干扰信号和通信信号在通信接收点的同步问题。文章提出了可实现的新型灵巧相关干扰方法，并进行了理论分析。仿真和实验结果证明了该方法的有效性，能够极大地降低所需的干扰功率。     

针对频率步进雷达的一种灵巧噪声干扰方法

根据频率步进雷达信号处理的特点,提出一种灵巧噪声干扰方式,即将干扰机接收并储存的雷达发射信号与视频噪声相卷积,经放大后转发,以获得匹配处理增益。分析了频率步进雷达信号的时频特性,阐述了灵巧式噪声干扰的机理,进行了干扰效能分析。理论和仿真结果表明,该灵巧噪声干扰能够有效干扰步进雷达信号,具有很高的干扰功率的利用率。     

基于FrFT域滤波的灵巧噪声干扰抑制方法

基于数字射频存储器(DRFM)的灵巧噪声干扰兼具压制式干扰效果和欺骗式干扰效果,难以被传统抗干扰方法有效抑制。针对这一问题,本文结合分数阶傅里叶变换(FrFT)与分数阶域滤波方法,提出了一种线性调频脉冲压缩雷达体制下的灵巧噪声干扰抑制方法。首先对接收信号进行分数阶傅里叶变换,随后根据发射信号在分数阶域的特征参数,设计分数阶域滤波器,对接收信号进行分数阶域滤波以滤除干扰,最后进行分数阶反变换还原目标信号。仿真结果表明,该方法能够对卷积噪声干扰与乘积噪声干扰两种典型的灵巧噪声干扰进行有效抑制,准确检测目标的位置。      

对PD雷达干扰的计算机仿真与分析

针对脉冲多普勒雷达采用脉冲压缩技术,相参积累等相参技术,并采用相干旁瓣对消和旁瓣匿影抗干扰技术,因此具有很强的抗干扰能力。首先介绍了基于噪声卷积和间歇采样两种灵巧噪声干扰方法的基本原理,为了证明灵巧噪声干扰的有效性,采用低重频下PD雷达为干扰对象进行干扰仿真试验。为了能够提高干扰效果,提出了改进方法,并进行计算机仿真。仿真结果表明,灵巧噪声干扰能很好地干扰相参体制雷达。     

采用BP神经网络的智能抗干扰决策引擎研究

在认知抗干扰通信系统中,智能决策是其核心,根据干扰环境,对系统的干扰抑制方式、频谱资源分配、调制编码方式和功率调整信息进行最优决策。现有的抗干扰通信系统的智能决策多采用遗传算法、人工蜂群算法等,面对日益复杂的电磁环境,通常这些算法不具有对新干扰的泛化能力。BP神经网络算法简单、具有一定的容错能力和泛化能力,本文设计并分析了一种基于BP神经网络的抗干扰实时决策引擎模型,根据系统性能设计了输入输出数据的预处理方式和判别标准,阐述了决策实现步骤,分析了算法参数;通过系统性能仿真,验证了文中提出的实时决策引擎的强抗干扰性能。与采用遗传算法和人工蜂群算法的决策引擎相比,本文提出的决策引擎决策速度更快且具有泛化能力和容错能力。      

面向脉冲多普勒雷达的灵巧噪声干扰方法研究

针对传统的压制干扰和欺骗式干扰难以对脉冲多普勒雷达产生显著干扰效果的问题,研究了一种利用数字储频技术和卷积调制方式产生灵巧噪声干扰的方法。这种干扰不但具有压制干扰的特点,还具有欺骗干扰的性质,不但在频域上瞄准目标频率,在时域上也与目标脉冲重合,能够更好的利用干扰功率。仿真试验表明,该干扰对脉冲多普勒雷达具有显著的干扰效果,达到了设计的要求。     

基于多特征联合处理的灵巧噪声干扰识别

灵巧噪声干扰已成为一种作用于新体制相参雷达的重要干扰类型.为了有效抑制该类干扰,提出一种基于多维特征的抗干扰方式.通过分析DRFM产生灵巧噪声干扰原理,建立目标与干扰信号模型;在分析对比两类信号特性的基础上,提取包络起伏参数、相位门限内概率及盒维数特征以表征目标与干扰信号在波形、相位及尺度信息上的差异;为了进一步提高干扰识别性能,加入表征信号复杂度的近似熵特征,分析表明该特征因子对噪声具有较强的鲁棒性;最后采用支撑向量机对提取的多维特征进行处理以实现灵巧噪声干扰的识别对抗.仿真实验表明,该方法对目标和干扰的正确识别率高且基本不受干噪比影响.     

基于改进人工蜂群算法的认知抗干扰智能决策技术研究

在认知抗干扰系统中,智能决策是其核心,根据干扰环境,对系统的干扰抑制方式、频谱资源分配、调制编码方式和功率调整信息进行最优决策。人工蜂群算法（Artificial Bee Colony,ABC）相较于其他群体智能算法全局寻优速度更快,设置参数少、灵活,易与其他技术结合改进原算法,实用性更广泛,但ABC算法同样有其局限性,如局部搜索能力较弱、后期收敛速度慢等。针对复杂干扰环境下对离散参数的决策,本文设计了一种基于改进人工蜂群算法的认知抗干扰智能决策引擎,分析了引擎模型,根据系统效能设计了目标函数和染色体,阐述了决策实现步骤,优化了决策参数,提出了按基因组搜索的改进算法;通过对系统抗干扰性能的仿真,验证了与未采用智能决策的抗干扰系统相比,采用本文提出的智能决策引擎的认知抗干扰系统在干扰环境中不仅具有强抗干扰性能,而且在保证通信传输可靠性的前提下,具有较低的发射功率和高传输效率,与采用传统人工蜂群算法和遗传算法的决策引擎相比,基于改进人工蜂群算法的决策引擎平均收敛代数更少且最优解概率更高。      

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.