短波通信频率的选择技术研究与实现

短波通信技术具有传输距离远、灵活性强、机动性高、应用成本低等优势,在诸多领域都有着广泛的应用。短波通信主要时利用电离层与地面之间的反射实现通信功能,受到太阳辐射等多方面因素的影响,电离层具有不稳定性和变化的不规则性,短波通信的稳定性、可靠性和持久性也会受到较大的影,保证短波通信的质量,要结合通信需求和电离层变化的规律,选择合适的通信信道和通信频率。     

短波天波频率的预测与分析

短波通信由于具有建设成本低、通信距离远和抗毁能力强等特点,是唯一不受网络枢纽和中继制约的远程通信手段,特别在发生战争或重大突发自然灾害等紧急情况可发挥其重要的作用.短波天波链路的预测在设计高质量短波通信链路的工作中显得尤为重要.本文介绍了短波天波传播预测的不同方法,利用短波仿真软件ITS对天波链路的频率进行预测和仿真,然后利用通信电台进行预测的验证与分析.     

基于短波车载三环天线的通信性能分析

电离层特性对短波天波通信性能有较大影响,但研究短波天线运用对通信性能影响的文献很少。采用MMANA-GAL软件仿真分析了车载三环天线的性能参数,并结合短波通信链路性能分析软件(简称ITS软件)分析了车载三环天线与鞭天线不同运用时的通信性能比较,结果显示车载三环天线在低频端工作时,高仰角辐射差,大于10MHz后天波高仰角辐射增强,增益随着频率增大明显增大。通信性能分析可知,10 MHz工作时,车载三环天线的近距离(300 km内)通信时接收机可以有更高的信噪比,所以车载三环天线在近距离通信有更好的应用效果。     

夏季短波Es场强计算方法研究

Es层是发生在电离层E层高度上的突发不规则结构，短波接收电平与Es和F层反射密切相关，Es对短波通信影响很大，而中国是Es的高发区. 利用中国电离层垂测网的Es层临界频率f_oEs数据，分析了中国地区夏季Es空间分布特性及其对短波通信的影响. 研究发现，夏季Es层可提高短波链路最高可用频率，扩宽了可用频段，提高了信号质量. 基于短波链路中间点电离层垂测f_oEs数据构建了Es传播模型来预测Es期间的接收电平值，并与西安至青岛、西安至昆明短波链路接收电平观测值进行了比较. 结果显示，当工作频率为5 MHz、10 MHz和15 MHz时，其接收电平预测值与观测值相吻合，反映了实测接收电平的变化趋势.     

基于OPNET的高频通信协议仿真与分析

由于电离层信道具有不可摧毁性,在应急通信领域研究短波通信协议就显得尤为重要。文中在第三代短波自动链路协议基础上,采用新技术对多址接入技术进行了研究分析,并利用OPNET Modeler 14.5网络仿真平台验证方案的可行性。在短波通信网络模型中,管道机制利用长期信道预测软件VOACAP获取电离层信道质量参数进行无线信道建模;核心函数和C编程语言进行3G-ALE节点模型及相关进程模型、网络模型的建模。对不同场景进行的仿真实验表明,信道质量对网络节点间建链成功率影响最明显,网络节点个数及两节点间距离对建链成功率影响次之。     

电离层高频信道互易性研究:中纬度电离层斜向探测实验

该文首次利用武汉电离层斜向探测系统(WIOISS)对武汉-万宁和万宁-武汉两条电离层高频信道的互易性进行了分析。WIOISS是基于GPS时间频率同步手段开发的新型电离层斜向探测系统,通过比较由系统扫频工作模式和定频工作模式得到的两条路径下的斜向传播群时延和电离层高频信道散射函数,可以得出武汉-万宁和万宁-武汉的电离层高频链路有较好的互易性。     

基于电离层色散的短波信道多径特性分析

短波链路不同传播模式的多径时延通常为0.5～2.0 ms，该文研究同一传播模式的多径时延，在考虑地磁场影响的情况下，将电离层短波传播的折射指数和射线追踪结合起来，给出了数值迭代算法，实现了用数值方法来描述电离层色散引起的多径时延，并进行了数值仿真，得出短波宽带通信的模拟带宽应为48 kHz。     

短波地空通信链路可靠度分析

可靠度是衡量短波地空通信链路性能的重要指标.分析了空间多样性和频率多样性对短波通信链路可靠度的影响,在此基础上将两者联合考虑,得出了飞机航空站与地面固定站进行短波通信时,2个地面站和7个频点情况下可以提供较高的联合可靠度的结论,通过仿真验证该结论为合理的站点数和频率数组合.     

短波信道资源智能规划技术研究综述

短波通信是人类最早掌握的一种无线通信技术，由于其主要靠电离层反射，通信距离长、不易摧毁，广泛应用于多个领域。由于短波频谱资源十分有限，且存在衰落、多径传输、易受干扰等问题，所以其频率分配和调度十分重要。系统地阐述了短波频谱的调度和分配方法，将其分为单条链路的频率选频和多点频率分配两大类，并对各类算法进行了对比，指出了短波通信无线信道资源智能规划的发展方向。     

基于二维解析射线追踪的短波电离层轨迹研究

考虑短波在电离层中通过单F层反射传播的情况,结合一种特定电离层电子浓度分布(准抛物)模型,利用二维解析射线追踪技术得到短波轨迹中参数的解析表达式.在此基础上分别对射线在频率固定、仰角变化及仰角固定、频率变化两种情况下的轨迹进行了讨论,得出频率和仰角对短波传输的地面距离及群路径的关系.最后对不同因子对轨迹的影响及短波轨迹进行了仿真.仿真结果表明,该方法在研究短波电离层传播轨迹中有很好的应用价值.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.