LFMCW激光雷达测量方法

由于光电器件响应速率有限,在满足相同距离分辨率要求时,线性调频连续波（LFMCW）激光雷达需要较同体制微波雷达大得多的相对带宽,所以不能直接应用LFMCW微波雷达的距离与速度去耦合技术来提取目标距离和速度信息。针对LFMCW激光雷达中频信号的频谱特点,提出了利用均匀分段傅里叶变换的方法来解算目标的距离和速度信息。仿真实验表明,在中频信号信噪比较低的情况下,该方法具有较小的测距测速误差和较小的运算量,从而具有一定的实用性。     

线性调频连续波激光雷达探测原理分析

介绍了线性调频连续波激光雷达的系统结构,量化分析了探测原理、距离分辨率及多普勒效应。分析表明,该雷达具有优良距离分辨能力,目标的距离及速度信息分别包含于中频信号的初始频率和中频调频斜率之中;通过仿真实验直观说明了比值带宽对目标速度测量影响,应采用非平稳信号处理解算目标信息。     

LFMCW激光雷达二次混频变周期调频解耦算法

线性调频连续波(LFMCW)激光雷达探测多个运动目标时,不同目标的中频信号频谱会相互叠加,此时无法直接从中频信号的频谱获取每个目标的距离和速度信息.为此提出一种基于二次混频和变周期调频解耦的多目标检测算法,用于LFMCW激光雷达多目标探测情况下目标检测与信息获取.该方法利用中频信号二次混频获得目标的多普勒频移,然后通过变周期调频对不同调频斜率下目标多普勒频移进行配对,获得真实目标的多普勒频移.利用所获得目标速度信息构建补偿信号对原中频信号进行补偿,并最终获得目标的距离信息.利用该方法对包含3个不同目标的中频信号进行检测仿真,获得3个目标的速度误差分别为:2.67％,1.01％以及0.01％,测距误差分别为0.10％,0.19％和0.28％.仿真结果说明该方法可以有效检测多个运动目标,并具有较高的检测精确度.     

一种LFMCW雷达多目标距离-速度配对新方法

针对线性调频连续波雷达双差拍-傅里叶处理中的多目标配对问题,提出了一种新的多目标距离-速度联合配对法。文中分析了连续波与线性调频连续的雷达回波频谱,描述了雷达系统工作原理;然后,利用单载频回波信号测量多目标的不模糊速度,同时利用锯齿调频波测量多目标的不模糊距离与模糊速度;最后,结合距离-速度配对的方法,实现多目标的配对。仿真结果验证了方法的有效性。     

噪声调频连续波雷达空间目标探测性能分析

在轨雷达探测空间目标时,目标相对雷达的速度高、距离远,采用通常的周期性信号雷达对其探测会产生距离模糊或速度模糊,采用解模糊的方法会增加系统的复杂性.文中采用噪声调频连续波雷达对空间目标进行探测,其发射信号无周期,作用距离无模糊.从体制上分析,其町测定远距离高速目标,并讨论其检测性能,与常规线性调频连续波雷达进行了仿真比较,证明了噪声调频连续波雷达对空间目标探测的有效性.     

调频连续波雷达距离-速度配对方法

通过分析线性调频连续波雷达回波差拍信号的频谱特点,提出了一种目标差拍幅度谱值配对和多普勒测距误差校正及解决距离-速度耦合的方法,并进行了计算机仿真。仿真结果验证了本文方法的有效性。     

一种调频连续波距离-速度配对处理方法

通过分析线性调频连续波雷达回波差拍信号的频谱特点,提出了一种目标差拍幅度谱值配对和多普勒测距误差校正及解决距离一速度耦合的方法,并进行了计算机仿真。仿真结果验证了本文方法的有效性。     

线性调频连续波雷达的一种信号处理方法

线性调频连续波（LFMCw）雷达具有距离和多普勒频率分辨率高,结构简单,体积小,重量轻和良好的低截获概率特性,得到了广泛的应用。对线性调频连续波雷达的目标回波信号进行分析,使用差拍一频谱分析-MTD的方法进行仿真,从回波信号中提取目标的相位信息,从而获取目标的距离和速度信息,该方法可有效地抑制固定杂波,方便动目标检测。     

空间交会激光雷达信息测量技术

为了测量目标飞行器的位置及速度等信息,提出采用模拟插入脉冲计数法测距,最小二乘曲线拟合微分法测速,四象限(QD)光斑定位法测角。并在MATLAB/SIMULINK环境下,对采用该方法的脉冲激光雷达信息测量系统进行了计算机仿真。结果表明,距离测量精度高,误差小于0.01m,速度精度也高,误差小于0.02m/s。采用该测量技术的脉冲激光雷达是可靠的。     

对称三角线性调频连续波信号模糊函数分析

本文从对称三角线性调频连续波雷达体制的特点出发,导出了对称三角线性调频连续波信号模糊函数,分析了它的特点;阐明了它与单斜率线性调频连续波信号和脉冲LFM信号模糊函数的区别;从模糊函数的角度分析说明了采用对称三角线性调频连续波信号相对于单斜率线性调频连续波信号可以大大提高目标的分辨力,并能消除多目标环境中运动目标的距离速度耦合现象.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.