键合材料对1W白光LED性能的影响

对采用银浆和250℃、130℃度高、低温锡膏作为芯片键合材料的1W白光LED结温、热阻和光衰进行了对比研究。研究结果表明,与采用银浆作为芯片键合材料的LED相比,采用锡膏作为芯片键合材料的1W白光LED的结温下降了10℃以上,热阻也相应下降了约10K/W;两种键合材料的1W白光LED初始光通量基本没有差别,在光衰试验中,初期均存在光通量提高现象。在环境温度58℃时,工作1400h之后,光通量才开始小于初始光通量;在工作2880h之后,两种键合材料的1W白光LED光衰相差6%。     

大功率LED整个寿命中的颜色漂移

为了研究大功率白光、蓝光LED在整个寿命中的颜色漂移,选用一系列的大功率白光、蓝光发光二极管分别进行了不同电流的恒流点亮。在点亮不同时间阶段测量了LED的发射光谱、色坐标和色温,研究了在不同电流点亮时的光通量、色坐标和色温的变化,分析了电流、时间等因素对颜色漂移的影响。结果表明,在不同电流点亮及同一电流点亮的不同时间阶段,LED的颜色不同。说明大功率LED的颜色漂移不仅是由荧光粉老化所引起,更主要的因素是材料本身的变化。文章对此进行了初步的分析,为白光LED的应用及进一步研究白光LED颜色漂移提供了参考。     

瓦级大功率白光LED光色电特性研究

文章基于瓦级大功率白光LED在照明领域应用的广泛性和重要性,展开了瓦级大功率白光LED光色电特性的研究。采用大功率LED封装设备与紫外-可见光-近紫外光谱分析系统,制备并测量了瓦级大功率白色发光二极管（LED）在不同正向电流IF驱动下的光通量、电功率、发光效率、发射光谱和色品坐标等参数。研究表明,光通量与电功率随耳的增大呈亚线性增长的趋势,而荧光粉转换效率下降是影响其辐射功率的主要原因之一。当电流增大时,白光LED光谱的蓝光峰值出现先蓝移后红移的现象,而黄光部分光谱形状无明显变化。此外,色坐标x、y值均随着IF的增大而降低,主波长减小,色温值升高。     

白光LED的封装材料对其光衰影响的实验研究

光通量、显色性、色温和光衰是衡量白光LED光源的四大重要指标。LED从指示、显示应用过渡到照明应用,产品的光衰控制和评价是一个重要的课题。本文通过相关的实验,探讨封装材料及其工艺措施对白光LED的光衰的影响。     

一体化封装LED结温测量与发光特性研究

基于一体化封装基板,制备了大功率白光LED。以低热阻的一体化封装基板为基础,设计了结温测量系统。利用光谱仪测得不同结温下LED的光电参数,并对其机理进行了分析。在工作电流为0.34A,所研究温度范围为10.8～114.9℃。实验结果表明,一体化封装的LED结温与正向电压、光通量、光效和色温有着良好的线性关系;结温的变化对主波长及色坐标影响甚微;结温的上升导致蓝光段强度下降且光谱发生红移,黄光段强度上升且光谱发生宽化,峰值波长由450nm转为550nm。     

提高小功率白光LED热特性的新方法

在传统直插式LED封装方法的基础上,提出了一种在环氧树脂中添加氮化硼(BN)填料的改进LED封装工艺。测量了BN填料质量分数与导热系数的关系,利用有限元分析软件ANSYS分析和实验测试了采用改进封装工艺φ5 mm白光LED的芯片结温、热阻等参数,并与传统封装方法的白光LED进行比较。结果表明:采用改进封装结构φ5 mm白光LED结温比传统封装方法下降4.5℃,热阻下降了17.8%,同时提高了初始光通量,降低了光衰。     

功率型白光LED可靠性的实验及仿真建模研究

快速推广LED产品到照明市场最主要的障碍在于长期的可靠性测试问题。由于长期的LED可靠性测试不符合快速且低成本的要求,因此本实验对白光LED进行步进式加速寿命老化测试,步进式环境温度从55oC到145oC变化。同时,对LED进行结温测试,并使用COMSOL仿真软件进行温度场分布仿真来模拟器件的发热情况,结果表明荧光胶处的温度高于LED芯片温度。在长期老化之后,对LED的光度进行测量,可以对LED的失效机理进行分析。通过研究温度对LED的光谱功率分布衰减的影响及光通量衰减的影响,发现在经过近3500 h的老化之后,LED的光衰很严重,表明电流及高温对LED的影响是极大的。     

一种非接触大功率白光LED结温测量方法

本文以不同色温类型的1W大功率白光LED为研究对象,通过改变工作电流和环境温度,对LED的结温和光谱之间的关系进行了研究。研究结果表明,无论对冷白光LED还是对暖白光LED,无论是电流还是环境温度引起的结温的变化,LED管光谱中白光光谱积分与蓝光光谱积分比值(R=W/B)都随结温呈现线性变化。因此,可以利用LED的辐射光谱进行结温的非接触快速测量是可行的,其最大的优点是不需要破坏器件的封装或LED灯具的整体性,是一种理想的结温测量方法。     

温度对白光大功率LED分档集中度的影响

LED封装行业中主要在常温下测试,并对产品进行产品的分选以保证集中度及一致性,但在LED正常使用时会发出热量,工作温度升高,一些场合,其工作温度会达到50℃以上的高温,且工作温度是随机的,造成LED的关键属性会产生较大漂移,产品在高温环境下的集中度未知。针对上述问题,通过对常温下测试分档的大功率白光LED器件,在高温下进行正向压降、光通量以及光谱参量等性能测试,分析其变化规律及集中度分布,发现在高温下器件光、电、色等特性会随温度变化产生漂移,其中不同档位器件正向压降与光通量随温度变化均呈良好的线性关系,不同档位器件光谱参量随温度变化不同,但高温下集中度仍保持良好。     

峰值波长和浓度对转光膜与白光LED发光性能的影响

本文以高折射率有机硅胶和无机Y3Al5O12:Ce3+发光材料为原料,采用加热固化的方法制备出有机/无机转光膜,系统的研究了发光材料的峰值波长和浓度对于转光膜和制备的白光LED光色性能的研究,并进行了机理分析。研究结果表明：不同峰值波长变量中,545nm对应白光LED最大的光通量,是由于其光谱与人眼明视觉曲线具有最大的重叠面积有关;不同浓度变量中,由于存在发光材料的吸收饱和现象,在9%浓度时白光LED最大的光通量,色温则与浓度变化呈现单向递减趋势,色坐标和光色均匀度则随着浓度的提高而提高,综合多种指标获得本研究中最佳工艺参数为峰值波长为545nm,浓度为9%,对应白光LED器件光通量为131.5lm,色温4551K,色坐标（0.3479,0.3758）,光色位置处于黑体辐射曲线的白光区,说明了转光膜在白光LED领域应用的可行性。     

LED封装的热控制优化设计

基于某型LED模块的实验结果,从热膨胀匹配、冷却技术的选择、发光效率、焊料及硅胶选择等方面对大功率LED的热控制问题进行了优化设计。实验结果表明,优化设计后的大功率LED的转换效率和光通量等指标都有了一定程度的改善。     

Analysis of thermal characteristics and mechanism of degradation of flip-chip high power LEDs

The purpose of this study is to investigate the thermal behavior at the die-attached interfaces of flip-chip GaN high-power light emitting diodes (LEDs) using a combination of theoretical and experimental analyses. The results indicate that contact thermal resistance increased dramatically at the die-attached interfaces with aging time and stress, degrading the luminous flux. The junction temperature and thermal uniformity of the flip-chip structure both strongly depend on the arrangement of gold bumps. Local hot spots effectively reduce light output under high electric and thermal stress, influencing the long-term performance of the LED device. The results were validated using finite element analysis and in experiments using an infrared and an emission microscope. A two-step thermal transient degradation mode was identified under various aging stresses. A simulation further optimized the bump configuration that was associated to yield a low junction temperature and high temperature uniformity of the LED chip. Accordingly, the results are helpful in enhancing the performance and reliability of high-power LEDs.     

LED封装中的散热研究

文章论述了大功率LED封装中的散热问题,说明它对器件的输出功率和寿命有很大的影响,分析了小功率、大功率LED模块的封装中的散热对光效和寿命的影响。对封装及应用而言,增强它的散热能力是关键技术,指出对大功率LED和LED模块散热设计很重要,因为大功率白光LED的光效和寿命取决于其散热。目前大功率LED的重点是提高散热能力,说明封装结构和封装材料在提高大功率LED散热中的影响,LED模块的散热是未来的重点。通过选用高热导率材料可以使温度得到显著控制,重点论述了封装的关键技术,最后指出了未来LED封装技术的发展趋势。     

Dimming of High-Brightness LEDs by Means of Luminous Flux Thermal Estimation

Usually, pulsewidth modulation (PWM) operation is selected as the best dimming strategy to drive high-brightness LEDs. Nevertheless, to obtain an enhanced full linear dimming control of the device, the luminous flux should be measured. This paper proposes a control method based on an estimator of the luminous flux emitted by the LED. Based on the characterization of the LEDs, this estimator is defined. The estimator provides the flux value from only two temperature values (the case temperature and the ambient temperature). Once the estimator is validated, the electronic driver to supply the LEDs, as well as the digital control scheme, are presented. Such a control scheme is suitable for both AM and PWM dimming strategies. A prototype of the electronic driver has been built and tested, and experimental measurements of AM and PWM dimming are presented. It can be concluded that with the proposed estimator, the flux emitted by the LEDs can be accurately estimated. Thus, the output light control of the LEDs can be accomplished by sensing temperature rather than luminous flux. The final output characteristic of the system shows linearity between the output flux and the reference value, with AM as well as with PWM dimming of the LEDs.     

GaN基蓝光大功率发光二极管的研制

采用一种自对准制造工艺和倒装芯片的装配技术,研制出GaN基蓝光大功率发光二极管(1mm×1mm)。其光学参数：总辐射功率143．19mW,光通量8．861m,发光效率7．291m/W,峰值波长462nm,半峰全宽24nm；其电学参数：正向电压3．47V、正向电流350mA。对相关工艺进行了简要讨论。     

Correlated Color Temperature Tunable Multi-chip Light Emitting Diodes Light Source Design

One of the methods to derive white light from light emitting diodes（LEDs） is the multi-chip white LED technology, which mixes the light from red, green and blue LEDs. Introduced is an optimal algorithm for the spectrum design of the multi-chip white LEDs in this paper. It optimizes the selection of single color LEDs and drive current controlling, so that the multi-chip white LED achieves the target correlated color temperature （CCT）, as well as high luminous efficacy and good color rendering. A CCT tunable LED light source with four high-power LEDs is realized based on the above optimal design. Test results show that it maintains satisfactory color rendering and stable luminous efficacy across the whole CCT tuning range. Finally, discussed are the design improvement and the prospect of the future applications of the CCT tunable LED light source.     

六棱锥衬底旋转角影响LED效率的模拟探究

以正六棱锥型图形化蓝宝石衬底GaN基LED为研究对象,设计并探讨了正六棱锥图案在排布过程中旋转角的变化对LED出光效率的影响,得出各面光通量随旋转角变化的规律:在0°～30°范围,随着旋转角的增大,总光通量与顶部光通量有下降趋势,底部光通量有增长趋势。当六棱锥旋转角在0°～6°范围内时,LED芯片的总光通量和顶部光通量均有最优值。综合考虑,旋转角为0°～6°的六棱锥型图形衬底对正装LED的出光效率有最佳的优化效果。     

GaN基白光LED温度特性实验研究

实验研究了恒流驱动条件下,GaN基白光LED的正向电压、发光光谱和发光效率随环境温度的变化情况.结果表明,在输入电流恒定的情况下,随着温度的升高,结电压和发光强度与温度具有良好的线性关系,并且GaN基白光LED的发光颜色总是向蓝光漂移,而小电流驱动时比大电流驱动时蓝光漂移更明显.根据实验结果,分析了器件的最佳额定工作电流.

Abstract：

Under a constant driving current, the changes of the forward voltage, emission spectrum and luminous efficiency of GaN-based White LEDs with the ambient temperature are studied experimentally. It is found that the forward voltage and the luminous intensity depend on the temperature linearly with constant injection current, and luminous colors of GaN-based White LEDs always shift towards blue. And the blue shift with low driving current is more obvious than that with high driving current. According to the results, the best rated operating current of GaN-based white LEDs is discussed.     

Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress

This paper describes an extensive analysis of the degradation of high-power white LEDs, submitted to dc and pulsed stress. By means of combined electrical and optical characterization we provide experimental evidence for the following: (i) dc stress can induce a significant decrease in the luminous flux of the devices; (ii) degradation rate has a linear dependence on the stress current level, thus indicating that current is a major driving force for degradation; (iii) optical degradation is significantly correlated to the increase in the defect-related current components, and to the red-shift of the emission wavelength of the main blue peak. On the basis of these results, degradation is ascribed to the increase in the defectiveness of the active region, with subsequent generation of defective or shunt paths; (iv) PWM stress determines a stronger degradation with respect to dc stress, for devices aged under similar conditions. The different mechanisms that may contribute to increasing the degradation rate during PWM stress with respect to dc case are discussed in the paper.     

Calculation of LED modules for highway lighting

The calculated distributions of the highway illuminance provided by light-emitting diode (LED) modules that can be used in available supports and arms are presented. Different variants of the arms with LEDs characterized by various luminous intensity curves and emission angles of 10 to 100° are investigated. Rotation of LEDs with various luminous fluxes at a luminous efficiency of 100 lm/W is also considered.