Matlab在负反馈放大电路分析中的应用

采用方框图分析法,对电压负反馈放大电路进行了分析。经对闭环和开环状态下的微变等效电路分别列写节点方程,并利用Matlab软件,编写程序,求解电路方程。运行结果表明,开环与闭环增益满足反馈放大器中的基本关系式,同时,引入负反馈后稳定性得以提高,输入、输出电阻减小,与负反馈对放大器性能影响中的基本理论相一致。     

差分-运放电压串联负反馈的理论计算与仿真分析

设计了直接耦合方式下的差分-运放电压串联负反馈放大电路,根据多级放大器增益的计算方法,采用方框图分析方法,计算出基本放大器的电压增益。另外,对所构建差分-运放电路,采用微变等效电路方法,经计算节点电压,进而得到反馈放大器的电压增益,两者满足负反馈放大电路中的基本关系。同时,启用仿真软件EWB,分别对基本放大器和反馈放大器做仿真分析,结果与理论计算一致,说明方框图分析法在分析反馈放大器中的应用是正确的。     

上海交通大学电子技术专业自学考试课程答疑 负反馈放大器的分析——《线性电子线路》答题之二

分析负反馈放大器常用方框图分析法.它以单环负反馈放大器的理想模式为基础,导出基本反馈方程式来分析计算负反馈电路.它首先将负反馈放大器电路区分成基本放大器和反馈网络两个方框,然后分别计算出基本放大器的开环增益K、开环输入电阻R_t、开环输出电阻R_o、反馈网络的反馈系数k_f和反馈深度F.最后利用负反馈的性质来分析计算出负反馈放大器的闭环增益K_f、闭环输入电阻R_(tf)和闭环输出电     

负反馈放大电路的拆环等效分析法

本文阐述用常用的电路分析方法将闭环的负反馈放大电路等效成开环式放大电路。用分析普通放大电路的通用方法分析计算闭环的负反馈放大电路。概念清楚,分析简便,思路灵活,计算结果与现行框图法一致。     

利用回路增益分析负反馈放大电路

目前，方框图法是被广泛使用的分析负反馈放大电路的方法。但用其求电路的增益时，不同的组态要用不同的方法，因而比较复杂繁琐。本文介绍另外一种求增益的方法；首先直接由负反馈放大电路求出回路增益，再利用反馈系数得到负反馈放大电路的增益，最后计算输入电阻、输出电阻。它的优点是负反馈放大电路的增益简单易求。     

Multisim12下的模拟电子线路仿真研究

电压串联负反馈电路在Multisim12进行电路仿真分析,探究了闭环和开环状态下的电压增益、输出阻抗、频率响应和非线性失真等的工作状况,经过Multisim12仿真波形和数据的分析计算,图像清晰,现象直观,结果精确的仿真效果,对电路工作状况研究有一定的借鉴价值.     

分析负反馈放大电路的等效解析法

本文介绍的等效解析法是:找出代表所有负反馈放大电路的母体等效电路;列出它在各种输入下的节点方程组;从它的电导行列式中解读出一组开环增益和反馈系数;求解並分析所有解,找出並证明它们共用的通式-闭环增益定理。由此可以引出更简单的闭环增益实用定理和求解闭环输入电阻和输出电阻的简易方法。     

一种计算CFA电压负反馈放大器增益的简便方法

对于电流反馈运算放大器(CFA)构成的电压负反馈放大器,根据反馈放大电路的基本方程,利用拆环法,通过先计算环路增益AHS,再计算开环增益AS,最后给出了该放大器的源增益、增益的表达式.结果表明:对CFA施加电压并联负反馈,源增益将改变1/(1-AHs);电压增益、互导增益改变1/(1-AH);电流增益、互阻增益改变1/(1-AH').对CFA施加电压串联负反馈,结论相同,只是AHS、AH、AH'三者相等,与基于电压反馈运算放大器(VFA)的电压负反馈放大器结论有较大差别.     

一种含理想运算放大器电路的讨论

为进一步明确含理想运算放大电路的有关概念和运算放大器的特性,本文从计算机仿真和理论分析两个方面,对一个含理想运算放大器电路的输入输出特性进行了模拟和推导.结果表明该电路在线性输入范围内是一电压跟随器,若超出线性输入范围,则输出波形严重失真;带反馈电路与开环电路相比较表现为线性输入范围扩大、电压增益减小,而这正是电路负反馈的特性.因此,不能简单的把接在运算放大器同相输入端的反馈视为正反馈.     

负反馈放大电路的受控源计算方法

在负反馈放大电路的计算中,常用微变等效电路法和方框图法。微变等效电路法的优点是演算结果比较准确,但对于多级反馈放大电路,由于所列的方程式较多,故演算比较烦琐;此外,这种方法的物理概念不突出。方框图法的突出优点是物理概念明确,突出了反馈深度对电路性能的影响。但是,在方框图法中:①基本放大电路和反馈网络往往不易分开;②在计算时,四种组态所用的量纲都各不相同,因而得到公式太多,不易掌握。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.