基于QR码的Contourlet域数字水印算法

针对目前数字水印技术无法有效抵抗几何攻击的问题,本文提出了一种基于QR码的Contourlet域数字水印算法。将文字信息进行QR码编码作为水印信息。首先,将载体图像进行Contourlet变换;然后,将得到的低频逼近图像进行分块;最后,将每一位QR码水印信息以量化的方式对应嵌入到每一个子块中。实验结果表明,本算法可以抵抗任意角度旋转和任意等比例缩放攻击,同时对高斯噪声、Speckle噪声、均值滤波、高斯滤波和JPEG压缩攻击具有很强的鲁棒性,并且算法复杂度低;水印提取时不需要借助原始图像,属于盲水印。因此,本文提出的数字水印技术可以广泛应用在数字产品的版权保护中。     

基于QR码和Schur分解的感兴趣区域水印算法

为了解决当前数字水印技术不可见性和鲁棒性不 能较好兼顾的问题,提出了一种基于QR(quick response)码和Schur 分解的感兴趣区域(ROI)盲提取水印算法。算法基于时间复杂性较低的Schur分解和符合人眼 视觉感知的显著图, 通过将显著图归一取反作为嵌入强度,自适应地将加密水印信息嵌入到载体图像经小波变换 和分块Schur分解的系数中。实验结果表明,本文算法不仅具有极高的不可见性,而且对裁 切、任意角度旋转、高斯噪声、 椒盐噪声、斑纹噪声、高斯滤波、中值滤波、对比度增强和JPEG压缩等攻击具有较强的鲁棒 性;由于显著 图作为公开密钥,所以算法在提取过程中不需要原载体图像和水印图像,属于盲提取水印算 法。因此,本 文算法在数字产品版权保护中具有较高的实际应用价值。     

基于Baker映射与时空混沌相结合的CT-QR域双彩色鲁棒盲水印算法

针对彩色水印图像的盲提取算法抗几何攻击鲁棒性不强的问题,提出一种Baker映射与时空混沌相结合的轮廓波变换(Contourlet transform,CT)和QR分解双彩色强鲁棒盲水印算法。首先将彩色水印分离成RGB分量,对三个分量分别进行Baker映射与时空混沌相结合的预处理操作,然后对载体图像的RGB分量分别进行Contourlet变换,分块QR分解得到酉矩阵,最后根据嵌入规则将加密后的水印分通道的嵌入到酉矩阵中。水印提取时利用Radon变换对图像进行几何校正可提高其几何攻击的鲁棒性。仿真结果表明,该算法不仅使嵌入水印后的图像具有良好的不可见性,而且能有效抵抗加噪、滤波、JPEG压缩、剪切、平移、旋转、马赛克、篡改等攻击,NC值均在0.9以上,对组合攻击也有较强的鲁棒性。      

一种嵌入可读水印的自适应盲水印算法

本文提出了一种基于DWT的嵌入可读水印的自适应盲水印算法,通过分析图像经离散小波变换后细节子带系数的特性,把细节子带系数的均值和方差作为水印信息的一部分来自适应地修改图像小波分解后某些细节子带的系数值,在满足水印不可感知性的条件下自适应地嵌入水印信息,实现了水印不可感知性和鲁棒性之间的折衷.同时,水印的提取无须求助于原图像,很好的实现了水印的盲检测.这里的水印是一幅有实际意义的二值图像.实验结果和攻击测试表明,本文提出的算法对JPEG/JPEG2000压缩、添加噪声、剪切、像素移位等多种攻击有较强的鲁棒性,同时对直方图均衡化、对比度调整和高斯滤波等图像处理操作也具有一定的抵抗能力.     

一种与JPEG图像压缩编码结合的细胞自动机域盲水印算法

该文结合JPEG图像压缩编码和细胞自动机,提出一种用于JPEG压缩图像的数字盲水印算法。该算法先用Moore型细胞自动机对水印图像进行置乱;随后用2维正交细胞自动机变换将原始灰度图像进行分解,并在分解后得到的低频细胞自动机域系数中嵌入置乱后的水印信息。最后将嵌入了水印的图像按JPEG图像压缩标准进行编码。水印的提取是在解码过程中进行的。实验结果表明,该水印算法有较好的隐藏性;对常见的攻击如JPEG压缩、滤波、剪切、旋转以及加性噪声攻击等有较好的鲁棒性。     

基于DCT的盲数字水印技术研究

数字水印是解决信息安全和版权保护的有效方法,本文以离散余弦变换(DCT)为基础,提出一种将有意义的水印(二值水印)嵌入到灰度图像中的盲数字水印算法,该算法能够很好地满足数字水印系统的透明性和鲁棒性。实验结果表明,文中算法不仅具有较好的透明性,而且对叠加椒盐噪声、JPEG压缩、中值滤波、低通滤波、剪裁攻击均具有很好的鲁棒性。     

基于DCT变换的QWT域改进的图像盲水印算法

针对数字图像的版权保护,基于离散余弦变换和四元数小波变换,提出了一种新的改进的盲水印算法,先根据待嵌入水印的大小对载体图像进行四元数小波变换,获得与幅值和相位信息相对应的4幅低频子带,然后对每个低频子带分别进行全局离散余弦变换,最后通过修改两个随机子带中特定位置上DCT系数的大小关系嵌入水印,利用分阶线性Logistic映射产生的混沌序列预处理经Arnold置乱后的水印信息和确定水印的嵌入位置.实验结果表明,该算法对添加噪声、JPEG压缩、滤波和亮度及对比度调整等攻击都具有很强的鲁棒性.     

基于小波变换的彩色图像数字水印新算法

提出了一种将灰度图像嵌入到原始彩色图像中的新数字水印算法.对RGB色彩空间彩色图像的绿色分量和蓝色分量进行haar小波变换.低频系数经过量化,将经过Arnold置乱后的灰度水印图像的位平面嵌入到低频子带.水印提取不需要原始载体图像.实验结果表明,该彩色图像数字水印算法不仅具有较好的透明性,而且对诸如叠加噪声、JPEG压缩、平滑滤波、几何剪切、图像增强和马赛克效果等攻击均具有较好的鲁棒性.     

基于DWT的彩色图像绿色分量数字水印方案

提出了一种在彩色图像的绿色分量嵌入置乱水印的方案,嵌入过程在小波变换域进行。原始二值图像水印经过置乱加密,并用均值为零、相互正交的两个伪随机序列扩频后,嵌入到绿色分量经两层DWT变换后的低频子带系数中。选取低频子带中能量最大的系数嵌入水印,并根据低频系数的能量比来确定水印嵌入的强度。针对水印嵌入方案,设计了有源提取水印的算法和水印盲检测算法。实验结果证明,该水印方案能有效地抵抗加性噪声(如椒盐噪声和高斯噪声)、低通滤波、缩放、图像剪切、行(或列)删除、JPEG压缩等各种攻击,具有很强的顽健性。     

一种基于曲波变换的数字水印算法

提出了一种基于曲波变换的数字水印算法,该算法将水印信息嵌入到曲波变换的粗尺度系数矩阵中,考虑到水印鲁棒性和不可见性的要求,选择合理的嵌入强度,使得加水印图像的不可见性更好。由于选择了代表图像大多数能量的低频系数嵌入,在抵抗JPEG压缩、噪声攻击、中值滤波等攻击性能方面较理想,因此文中算法具有较强的鲁棒性,能满足水印系统不可见性和鲁棒性的要求。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its