基于虚拟信号处理平台的差分式中红外甲烷检测系统

利用上位机及Labview工作平台数据处理能力强 的优势,实现了一种针对甲烷(CH₄)气体的双通道差分式中红外检测系统。采用IRGJ型双 通道传感器(英国E2V公司,3.31μm 和3.90μm)检测气体浓度变化,利用Labview和数据采集(DAQ)卡(PCI6221)实现对探测器输出 信号的采集和处理,采用二阶巴特沃斯数字滤波器滤除噪声以提高信噪比(S NR),对系统硬件和软 件进行了集成。系统具有信号采集、滤波、幅值提取、浓度计算、存储及网络发布等功能 。 配备了不同浓度的CH₄气体样品,开展了标定实验,并测量了系统的精度、稳定性和检 测下限等指标。实验结果显示,系统对CH₄气体的测量范围为0~5%,对9种气体样品的 检测误差均小于6%。受传感器自身光程的限制,系统的检测下限约为60×10－6。对浓度为 2000×10－6(0.2%)的气体进行了 长达4h的浓度检测,除个别突变点外 ,检测的最大误差小于10%。由于数据处理能力强,系统功能不受资 源限制并可任意扩展。     

检测天然气中H2S气体浓度的光子带隙光纤传感器

为消除光源不稳定、光电器件的热零点漂移以及零 点漂移对测量准确度的影响,基于差分吸收检测法,设计一种检测天然气中H₂S气体浓度 的高稳定性、高灵敏度的光子带隙传感器。为提高系统响应,采 用4段串联的空芯光子晶体光纤(HC-PBF)作为气体传感探头。对不同组分浓度 的H₂S和CO₂气体进行了检测,结果表明,系统响应时间为53s, 测量灵敏度可达2×10－6 mol/L。     

基于多模激光关联光谱的甲烷气体检测技术

为提高多模激光吸收光谱的灵敏度,将多模二极 管激光关联光谱、长程吸收技术和波长调制光谱结合,建立了一 套具有高检测灵敏度和高稳定性的气体检测系统。采用1675nm多模激光器作为光源,以光程为100 m的离散镜片型 多通 池作为气体吸收池,利用甲烷的2ν₃泛频带吸收谱线,通过计 算待测气体和参考气体的二次谐波信号峰值之间的关系,实 现了对CH₄气体的测量。实验在室温和20.265 kPa(即0.2个标准大气压)条件下进行 ,CH₄浓度范围为1.00×10－5－1.10×10－2。实验结果表明,CH₄浓度测量值与真实值之间具有良好的线性关系, 其线性度为0.997,系统的测量准确度为 3.50%,对浓度为2.60×10－6的气体样 品在30 min内的连续测 量表明系统稳定度优于2.53%。本方法具有操作简单、稳定性 好、灵敏度高和环境适应性强等优点,在工业过程控制和环境监测中具有广阔的应用前景。     

红外甲烷检测仪的响应时间建模与实验研究

针对研制的基于非对称椭球聚光镜/气室的红外 甲烷(CH₄)检测系统,利用菲克第一定律,建立了用于分 析仪器响应时间的数学模型,在CH₄气体由椭球气室内向气室外扩散和由气室外向气室 内扩散两种情况下, 推导得到了气室中实时CH₄浓度与响应时间的关系表达式,计算并分析了响应时间与气 室结构参数、初始 浓度以及目标浓度的关系。计算结果显示,仪器的10～90%的响应时 间与气室的结构参数有关,而与气室内 的初始浓度和目标浓度均无关。当长轴取为7.6cm、开孔直径分别为 0.50cm和2.24cm时,计算得到的仪 器响应时间约为9.42s。利用所制作的非对称椭球聚光镜/气室和CH ₄检测仪,分别测量了仪器的响应时间, 仪器所处容器的浓度在0～10－4间变化时,其上升和下降时间 分别为7.25s和9.00s;仪器所处容器的浓度 在10－3～10－2间变化时,其上升和下降时间均约8.25s。由于实验条件未能较好满足菲克定律要求,实 验结果和理论计算结果存在一定的差异。尽管如此,本文给出的分析理论和相关模型,在估 算具有类似气室结构的检测仪响应时间方面具有应用价值。     

基于多次反射样品池的TDLAS逃逸NH3检测研究

时域激光吸收光谱(TDLAS)技术具有高选择性、 高准确性优点,为逃逸NH₃的在线检测提供了可靠的技术手段。本文利用TDLAS 系统分别在White和Herriott 两种样品池中对浓度为(10～100)×10－6的NH₃进行检测, 采集得到其二次谐波光谱,比较 了两种样品池测量结果,分析对比两种样品池的优缺点。实验显示,Herriott样品池的噪声 要大,根据光谱曲线的标准偏差得到White样品池最低检出限为1.21×10－6 ,Herriott样品池 的检测限为1.61×10－6。结果表明,Herriott样品池更适合 恶劣环境现场应用,能够满足逃逸NH₃的痕量检测要求,适合在线监测。     

基于光谱分析的高精度颜色测量系统

为解决颜色测量过程中光源分布不均匀、外界环 境光影响和测试结果误差大等问题,提 出并实现一套在稳定均匀光源下的高精度颜色测量系统。系统主要由标准光源对色灯 箱、PR-670 亮度色度计及测色软件3部分组成。对市售标准光源对色灯箱进行了整体重建与 升级改进, 通过安装棱镜板、扩散板等装置,提供稳定且均匀的光源;应用PR-670 亮度色度 计精确获得被测颜色的色度、三色刺激值、光谱、色坐标和亮度等,其中色坐标的精确度 达到10－4;通过LabVIEW开发的测色软件将参数显示、搜集并综合比较,支 持数据读写功能,得 出被测颜色的色彩本质属性。实验结果表明,被测颜色物体在一般的标准光源对色灯箱内, 随着位置的 不同色坐标存在较大差异,其X、Y方差为Sx=3.40046×10－5,Sy=4.73875×10－5。在改进后的灯箱内部, 色坐标较为密集、稳定,其X₁、Y₁方差为Sx₁=8.18249×10－6,Sy₁=1.59099×10－5 。通过对比可知,本文系统较大提高光源分布均匀性,缩小测试误差,实 现了仪器的自动化控制。     

基于宽频光源-FP腔的大气CO2检测系统误差分析

介绍了由宽频光源和法布里-珀罗 (Fabry-Pérot, FP)谐振腔组成的CO₂检测系统。结合常见的主动光学系统误差分析方法,对系统的各个误差项进行了定量化分析。系统误差来源于光源能量波动、环形器串扰、FP腔谱线变动和探测器噪声四个方面。通过建模计算了各独立误差项对差分信号数值的影响,确定了4项主要的系统误差。传统大气检测误差分析将硬件系统误差直接关联到浓度数据上,本文误差分析方法把硬件误差和反演算法误差剥离,对于提高系统的工作能力有更好的指导意义。     

基于光声光谱的二氧化碳测量技术研究

光声光谱技术是一种以光声效应为基础,具有响 应速度快、测量时间短、检测灵敏度 高等优点的新型光谱分析检测技术,已成为一种快速、安全、可靠的痕量气体检测手段。本 文利用中心波长位于2.0 μm的分布反馈式可调谐二极管激光器作为 光源,搭建了二氧化碳(C O₂)光声光谱测量系统,实验中采用对样品气体加湿的方式,通过引入弛豫速率快的H₂O 分子 有效降低CO₂分子的弛豫时间,增加了CO₂气体的光声信号强度,提高了系统的探测灵敏 度。 测量中选取4998.35 cm－1处的CO₂吸 收谱线为研究对象,结合波长调制技术,对CO₂气体进 行了探测研究。首先通过对系统的评估,确定了系统的最佳调制频率和最佳调制振幅为785 Hz和7.586 cm－1。然后通过对一系列 不同浓度的CO₂-N₂混合样品气体在最优实验条件下的测 量研究发现,所测光声信号与CO₂气体浓度之间具有良好的线性关系,进而反演出大气中C O₂气体的含量,其浓度值约为3.82×10－4。最后利用此系统对 室外大气中CO₂含量进行了连续 24小时的连续实时测量,得到了CO₂气体在一天中的浓度变化情况,并利用Allan方差对系 统 的长期稳定性进行了分析,当系统平均时间为1000 s时,探测灵敏度 约为1×10－7,证实了系统具有良好的稳定性和探测灵敏度。     

基于虚拟锁相放大器的中红外CO检测系统

利用PC机和LabVIEW平台较强的数据处理能力, 设计并实现了一种基于虚拟锁相放大器的中红 外CO检测系统。系统采用双通道热释电探测器检测气体浓度,利用USB数据采集卡采集 探测器的传感信号,利用LabVIEW平台的乘法器、滤波器及直流幅值提取模块构建的虚拟锁 相放大器提 取传感信号幅度。为了表征虚拟锁相放大器的性能,利用幅度可调的标准正弦信号作为 待测信号,对 虚拟锁相放大器输出信号的幅度与标准正弦信号的幅度做实验测量与对比,二者呈现出良 好的线性关系, 线性拟合优度约为99.978%。对配备的20种CO气体 样品开展气体标定实验,并测量 了本文系统的精度、稳定性和检测下限等指标。实验结果显示,系统的检测下限约为50×10－6,对20种气体 样品的检测误差均小于4.2%,对浓度为3500×10－6气体样品3h测量结果的最大波动范围为±6%。 由于LabVIEW资源丰富且功能可任意扩展,因此在实验室环境中的气体检测,本文系统相 比采用嵌入式微处理器的系统更具有优势。     

基于非线性标准差模型的差分光学吸收光谱技术烟气浓度测量

采用差分光学吸收光 谱(DOAS)技术测量烟气时,需采用非线性补偿方法来提高测量精度。本文基于自行研制的DO AS技术烟气测量系统,对SO₂和NO标准气体进行了单一气体的建模实验,提出了利用 差分光学密度标准差和气体浓度之间关系的非线性模型预测烟气浓度的方法,并以此测量 了SO₂和NO单一组分及混合气体的浓度,将实验结果与传统最小二乘法的反演浓度进行 了对比。结果显示,测量单一气体时,得到的两种气体非线性模型的判定系数 R²分别为 0.999和0.999,SO₂的满量程误差为±0.7％,最大误差为 2.6%和2.8%,明显优于最小 二乘法反演最大误差－16.1%和－19.9%;测量混合气体时,最大误差 由传统方法的－24.6%和－28.1%减小至－4.8%和5.2%。结果表明,本文方法可提高烟气测量的准确度。     

VOLTE容灾机制研究及优化方案

_{本文首先对VOLTE现网网络结构及容灾机制进行研究分析,发现现存容灾机制中存在的缺点和不确定性,针对其中的问题,针对性地进行了深入研究和分析,创新的提出了1种快速容灾抢通方案,以达到提升VOLTE业务运维能力和用户业务感知的目的。}     

Calculation of energy band gaps in quaternary iii/v alloys

The dielectric theory of electronegativity is applied to the calculation of the compositional dependence of the energy band gap for quaternary III/V alloys of type A_l-xB_xC_1-yD_y and A_1-x-yB_xC_yD. The departure from linearity of E_G versus x and y is taken to be the sum of two terms, the intrinsic or virtual crystal term and the extrinsic term due to effects of aperiodicity which for one type of alloy may occur on both sublattices. Rather than simply treating the quaternary as an average of the bounding ternary systems, as has been common in the past, the intrinsic departure from linearity is calculated by assuming E_h,i,C, and D_av to vary linearly with x and y. The result is a smaller intrinsic deviation from linearity and a much better fit to existing data in the system Ga_1-xIn_xAs_1-y P_y. The calculation is also applied to three systems where no data exist but which are of great interest because of their potential application for the fabrication of lattice matched tandem solar cells: Ga_l-xA1_xAs_l-ySb_y. Ga_1-x-yA1_xIn_yAs, and GaAs_1-x-yP_xSb_y.     

新形势下河北移动全业务支撑策略研究

随着铁塔公司的成立及国家在“宽带中国”“提速降费”等一系列通信领域的重大战略实施,全业务运营越来越成为河北移动保持领先,实现卓越的重要支点。基于此河北移动启动大规模综合业务区建设,由传统传输网围绕基站建设转向全业务支撑。河北移动将综合业务区建设与全业务机房的选取统筹安排,建设综合业务区与全业务机房的联络光缆,将综合业务区光缆网成为承载重要集客数据专线和4G拉远站的载体,合理、有序、迅速实现“一张光缆网”的建设,鼎力支撑全业务及4G的发展。     

Nickel silicidation techniques for strained Si1?xGex, Si1?x?yGexCy, and Si1?yCy alloys material-device applications

A nickel silicide process for Si_1-xGe_x, Si_1-x-yGe_xC_y, and Si_1-yC_y alloy materials compatible with Si technology has been developed. Low-resistivity-phase (12–20 μΘ cm) nickel silicides have been obtained for these alloys with different low sheet-resistance temperature windows. The study shows that thin (15–18 nm) silicide layers with high crystalline quality, smooth silicide surface, and smooth interface between silicide and the underlying material are achievable. The technique could be used to combine the benefits of Ni silicide and Si_1-xGe_x, Si_1-x-yGe_xC_y, and Si_1-yC_y alloys. The technique is promising for Si or Si_1-xGe_x, Si_1-x-yGe_xC_y, and Si_1-yC_y alloy-based metal-oxide semiconductor, field-effect transistors (MOSFETs) or other device applications.     

Low pressure metalorganic chemical vapor deposition of InP and related compounds

The low pressure metalorganic chemical vapor deposition epitaxial growth and characterization of InP, Ga_0.47In_0.53 As and Ga_xIn_1-xAs_yP_1-y, lattice-matched to InP substrate are described. The layers were found to have the same etch pit density (EPD) as the substrate. The best mobility obtained for InP was 5300 cm² V⁻¹S⁻¹ at 300 K and 58 900 cm² V⁻¹ S⁻¹ at 77₂K, and for GaInAs was 11900 cm² V⁻¹ S⁻¹ at 300 K, 54 600 cm² V⁻¹ S⁻¹ at 77 K and 90 000 cm V⁻¹S⁻¹ at 2°K. We report the first successful growth of a GaInAs-InP superlattice and the enhanced mobility of a two dimensional electron gas at a GaInAs -InP heterojunction grown by LP-MO CVD. LP MO CVD material has been used for GaInAsPInP, DH lasers emitting at 1.3 um and 1.5 um. These devices exhibit a low threshold current, a slightly higher than liquid phase epitaxy devices and a high differential quantum efficiency of 60%. Fundamental transverse mode oscillation has been achieved up to a power outpout of 10 mW. Threshold currents as low as 200 mA dc have been measured for devices with a stripe width of 9 um and a cavity length of 300 um for emission at 1.5 um. Values of T in the range 64–80 C have been obtained. Preliminary life testing has been carried out at room temperature on a few laser diodes (λ = 1.5μm). Operation at constant current for severalthousand hours has been achieved with no change in the threshold current.     

Transport properties of thermoelectric materials for coolers

The Seebeck coefficient, thermal conductivity, electrical conductivity and Hall coefficient of cooler grade, p-and n-type ternary alloys of Bi₂Te₃-Sb₂Te₃-Sb₂Se₃ were measured between 10 and 300 K. Between 300 K and about 150 K the temperature dependence of the transport properties can be explained by assuming nondegeneracy and a lattice scattering mechanism. The difference between the temperature dependence of the Hall effect in n-and p-type alloys can be explained by the presence of sub-bands of light and heavy holes in the valence band of p-type alloys.     

Characterization of a rapid thermal anneal TiNxOy/TiSi2 contact barrier

In this paper, the physical and electrical properties of a TiN_xO_y/TiSi₂ dual layer contact barrier are reported. The TiN_xO_y/TiSi₂ barrier was formed by rapidly annealing a Ti thin film on Si in an N₂ ambient. During this process, the Ti film surface reacts with N₂ to form a TiN_xO_y skin layer and the bulk of the Ti film reacts with Si to form an underlying TiSi₂ layer. The influences of rapid thermal anneal (RTA) conditions on the TiN_xO_y layer were investigated by varying the RTA temperature from 600 to 1100° C and cycle duration from 30 to 100 s. It is found that the resulting TiN_xO_y and TiSi₂ layer thicknesses are dependent on RTA temperature and the starting Ti thickness. For a starting Ti thickness of 500Å, 150Å thick TiN_xO_y and 800Å thick TiSi₂ are obtained after an RTA at 900° C for 30 s. The TiN_xO_y thickness is limited by a fast diffusion of Si into Ti to form TiSi₂. When a Ti film is deposited on SiO₂, Ti starts to react with SiO₂ from 600° C and a significant reduction of the SiO₂ thickness is observed after an RTA at 900° C. The resulting layer is composed of a surface TiN_xO_y layer followed by a complex layer of titanium oxide and titanium suicide. In addition, when Ti is depos-ited on TiSi₂, thicker TiN_xO_y and TiSi₂ layers are obtained after RTA. This is because the TiSi₂ layer retards the diffusion of Si from the underlying substrate into the Ti layer. NMOSFETs were fabricated using the TiN_xO_y/TiSi₂ as a contact barrier formed by RTA at 900° C for 30 s and a significant reduction of contact resistance was obtained. In addition, electromigration test at a high current density indicated that a significant improvement in mean time to failure (MTF) has been obtained with the barrier.     

Processing of large YBa2 Cu3Ox domains for levitation applications by a Nd1+x Ba2−x Cu3 Oy-Seeded melt-growth technique

YBa₂Cu₃O_x domains for levitation applications have been produced by a seeding technology that includes Nd_1+x Ba_2−x Cu₃O_y seeds and melt-processing technologies such as conventional melt-textured growth, melt-texturing with PtO₂ and Y₂BaCuO₅ additions, and the new solid-liquid-melt-growth technology. Large domains (∼20 mm) with high levitation forces (F₁ up to 8.2 N) have been produced. The reproducibility of the results is good, and the capability of producing a large number of pellets in a single batch indicates good potential for the production of large amounts of this material.     

基于InP衬底的晶格失配In0.68Ga0.32As的MOCVD生长及其特性研究

采用MOCVD生长技术在InP衬底上成功实现了晶格失配的3μm In0.68 Ga0.32As薄膜生长.通过As组分的改变,利用张应变和压应变交替补偿的InAsxP1-x应变缓冲层结构来释放由于晶格失配所产生的应力,在InP衬底上得到了与In0.68Ga0.32 As晶格匹配的InAsxP1-x“虚拟”衬底,通过对缓冲层厚度的优化,使应力能够在“虚拟”衬底上完全豫弛.通过原子力显微镜(AFM)、高分辨XRD、透射电镜(TEM)和光致发光(PL)等测试分析表明,这种释放应力的方法能够有效提高In0.68 Ga0.32 As外延层的晶体质量.     

The effect of Tl2Te3 on the properties of the solid solution (Sb2Te3)0.75.(Bi2Te3)0.25

The effect on transport properties of the addition of 0.5-5% Tl₂Te₃ to p-type solid solutions of antimony and bismuth tellurides was studied. It was found that the addition of Tl₂Te₃ caused a lessening of the increase of hole concentration as low temperatures were approached, resulting in a slower decrease of the Seebeck coefficient with a decrease in temperature. In partial fulfillment of M.Sc. degree, Hebrew University, Jerusalem. Permanent address, Dept. of Inorganic and Analytical Chemistry, Hebrew University, Jerusalem.