基于COB技术的LED散热性能分析

当前,散热问题已成为影响LED寿命、光效、光衰和色温等技术参数的重要因素。文章在综合分析散热技术和LED封装对散热性能影响的基础上,利用COB(板上芯片)封装技术,将LED芯片直接封装在铝基板上,研制成了一种基于COB封装技术的LED。与SMD封装LED进行比较,分析了其散热性能。分析结果表明:基于COB封装技术的LED减少了LED器件的结构热阻和接触热阻,使其具有良好的散热性能。     

硅衬底结构LED芯片阵列封装热可靠性分析

LED阵列封装是高密度电子封装的解决方案之一,LED的光集成度得到提高,总体输入功率提高,但同时其发热量大,封装结构如果不合理,那么在温度载荷下各层材料热膨胀系数的差异将会导致显著的热失配现象,从而将会大大缩短LED的寿命。为此,兼顾散热和封装的可靠性设计与表面贴装式将芯片直接焊接在铝基板上不同的是采用硅衬底过渡,同时在硅衬底上布置电路这一结构。这种结构的优点是可以通过硅衬底的过渡来降低热失配对封装结构的影响,同时硅衬底作为电路层则省去了器件引脚。通过对4×4的LED芯片阵列结构进行有限元模拟,分析了温度对带有硅衬底的LED芯片阵列封装可靠性影响,同时对硅衬底进行分析和总结。     

基于微通道致冷的大功率LED阵列封装热分析

采用微通道致冷技术,设计了大功率LED阵列封装的微通道致冷结构,并应用热分析软件模拟了其热性能,探讨不同鳍片结构尺寸、流速、功率等参数对LED多芯片散热效果的影响.文中提出了采用交错通道以提高LED封装的散热能力,模拟结果显示,交错微通道致冷的封装结构能很好地满足大功率LED阵列的散热需要.     

一种高功率LED封装的热分析

建立了大功率发光二极管(LED)器件的一种封装结构并利用有限元分析软件对其进行了热分析,比较了采用不同材料作为LED芯片热沉的散热性能.最后分析了LED芯片采用chip-on-board技术封装在新型高热导率复合材料散热板上的散热性能.     

基于Si衬底的功率型GaN基LED制造技术

介绍了Si衬底功率型GaN基LED芯片和封装制造技术,分析了Si衬底功率型GaN基LED芯片制造和封装工艺及关键技术,提供了产品测试数据。Si衬底LED芯片制备采用上下电极垂直结构与Ag反射镜工艺,封装采用仿流明大功率封装,封装后白光LED光通量达80 lm,光效达70 lm/W,产品已达商品化。与蓝宝石和SiC衬底技术路线相比,Si衬底LED芯片具有原创技术产权,可销往任何国家而不受国际专利的限制。产品抗静电性能好,寿命长,可承受的电流密度高,具有单引线垂直结构,器件封装工艺简单,而且生产效率高,成本低廉。其应用前景广阔,是值得大力发展的一门新技术。     

基于倒装焊芯片的功率型LED热特性分析

对LED的导散热理论进行了研究,推导出了倒装焊LED芯片结温与封装材料热传导系数之间的关系。通过分析倒装焊LED的焊球材料、衬底粘结材料和芯片内部热沉材料对芯片结温的影响,表明衬底粘结材料对LED的结温影响最大,并且封装材料热传导系数的变化率与封装结构的传热厚度成反比,与传热面积成正比。该研究为倒装焊LED封装结构和材料的设计提供了理论支持。     

LED封装中的散热研究

文章论述了大功率LED封装中的散热问题,说明它对器件的输出功率和寿命有很大的影响,分析了小功率、大功率LED模块的封装中的散热对光效和寿命的影响。对封装及应用而言,增强它的散热能力是关键技术,指出对大功率LED和LED模块散热设计很重要,因为大功率白光LED的光效和寿命取决于其散热。目前大功率LED的重点是提高散热能力,说明封装结构和封装材料在提高大功率LED散热中的影响,LED模块的散热是未来的重点。通过选用高热导率材料可以使温度得到显著控制,重点论述了封装的关键技术,最后指出了未来LED封装技术的发展趋势。     

照明用大功率LED散热研究

大功率LED体积小、工作电流大,输入功率中大部分转化为热能,散热是需要解决的关键技术.文章介绍了大功率LED热设计的方法,针对大功率LED的封装结构,建立了热传导模型;对某照明用大功率LED阵列进行了散热设计,通过仿真分析和热评估试验验证了所采用的散热方法和设计的散热器满足LED阵列的散热要求.     

一种高功率白光LED灯具的封装热设计研究

建立了一种大功率白光LED照明灯具的封装结构,采用ANSYS有限元软件对其进行热分析,根据热分析的结果逐步改进封装结构,在考虑成本和尺寸限制的条件下,对LED的封装散热结构进行了优化.     

多芯片贴片式LED器件结温测量

结温是多芯片LED器件热性能的关键参数。以SMD5050 LED器件为例,研究了多芯片贴片式LED器件结温测量方法。SMD5050 LED是一种多芯片贴片式封装的LED器件,器件内封装有3颗芯片,3颗芯片之间并联。根据单芯片LED器件热阻测试原理,模拟SMD5050 LED器件正常工作时的状态,对SMD5050 LED器件的结温进行了测量,并根据LED芯片特性,验证了测量结果的准确性,这种方法适用于封装结构相似的其他多芯片LED器件结温的测量。     

带有TSV的硅基大功率LED封装技术研究

介绍了一种带有凹槽和硅通孔(through silicon via,TSV)的硅基制备以及晶圆级白光LED的封装方法。针对硅基大功率LED的封装结构建立了热传导模型,并通过有限元软件模拟分析了这种封装形式的散热效果。模拟结果显示,硅基封装满足LED芯片p-n结的温度要求。实验结合半导体制造工艺,在硅基板上完成了凹槽和通孔的制造,实现了LED芯片的有效封装。热阻测试仪测得硅基的热阻为1.068K/W。实验结果证明,这种方法有效实现了低热阻、低成本、高密度的LED芯片封装,是大功率LED封装发展的重要方向。     

Design and Simulation of High-power LED Array Packaging

Thermal management is one of the key technologies for high-power Light emitting diode（LED） entering into the general illuminating field. Successful thermal management depends on optimal packaging structure and selected packaging materials. In this paper, the aluminum is employed as a substrate of LED, 3×3 array chips are placed on the substrate, heat dissipation performance is simulated using finite element analysis（FEA） software, analyzed are the influences on the temperature of the chip with different convection coefficient, and optical properties are simulated using optical analysis software. The results show that the packaging structure can not only effectually improve the thermal performance of high-power LED array but also increase the light extraction efficiency.     

大功率LED低热阻封装技术进展

散热是大功率LED封装的关键技术之一,散热不良将严重影响LED器件的出光效率、亮度和可靠性。影响LED器件散热的因素很多,包括芯片结构、封装材料(热界面材料和散热基板)、封装结构与工艺等。文章具体分析了影响大功率LED热阻的各个因素,指出LED散热是一个系统概念,需要综合考虑各个环节的热阻,单纯降低某一热阻无法有效解决LED的散热难题。文中还对国内外降低LED热阻的最新技术进行了介绍。     

Status and prospects for phosphor-based white LED packaging

The status and prospects for high-power, phosphor-based white light-emitting diode (LED) pack-aging have been presented. A system view for packaging design is proposed to address packaging issues. Four aspects of packaging are reviewed: optical control, thermal management, reliability and cost. Phosphor materials play the most important role in light extraction and color control. The conformal coating method improves the spatial color distribution (SCD) of LEDs. High refractive index (RI) encapsulants with high transmittance and modified surface morphology can enhance light extraction. Multi-phosphor-based packaging can realize the control of correlated color temperature (CCT) with high color rendering index (CRI). Effective thermal management can dissipate heat rapidly and reduce thermal stress caused by the mismatch of the coefficient of thermal expansion (CTE). Chip-on-board (COB) technology with a multi-layer ceramic substrate is the most promising method for high-power LED packaging. Low junction temperature will improve the reliability and provide longer life. Advanced processes, precise fabrication and careful operation are essential for high reliability LEDs. Cost is one of the biggest obstacles for the penetration of white LEDs into the market for general illumination products. Mass production in terms of CoB, system in packaging (SIP), 3D packaging and wafer level packaging (WLP) can reduce the cost significantly, especially when chip cost is lowered by using a large wafer size.     

提高小功率白光LED热特性的新方法

在传统直插式LED封装方法的基础上,提出了一种在环氧树脂中添加氮化硼(BN)填料的改进LED封装工艺。测量了BN填料质量分数与导热系数的关系,利用有限元分析软件ANSYS分析和实验测试了采用改进封装工艺φ5 mm白光LED的芯片结温、热阻等参数,并与传统封装方法的白光LED进行比较。结果表明:采用改进封装结构φ5 mm白光LED结温比传统封装方法下降4.5℃,热阻下降了17.8%,同时提高了初始光通量,降低了光衰。     

大功率白光LED封装设计与研究进展

封装设计、材料和结构的不断创新使发光二极管(LED)性能不断提高.从光学、热学、电学、机械、可靠性等方面,详细评述了大功率白光LED封装的设计和研究进展,并对封装材料和工艺进行了具体介绍.提出LED的封装设计应与芯片设计同时进行,并且需要对光、热、电、结构等性能统一考虑.在封装过程中,虽然材料(散热基板、荧光粉、灌封胶)选择很重要,但封装工艺(界面热阻、封装应力)对LED光效和可靠性影响也很大.     

Fabrication of flexible AlGaInP LED

Flexible light-emitting diodes(LEDs)are highly desired for wearable devices,flexible displays,robotics,biomedicine,etc.Traditionally,the transfer process of an ultrathin wafer of about 10–30μm to a flexible substrate is utilized.However,the yield is low,and it is not applicable to thick GaN LED chips with a 100μm sapphire substrate.In this paper,transferable LED chips utilized the mature LED manufacture technique are developed,which possesses the advantage of high yield.The flexible LED array demonstrates good electrical and optical performance.     

On the crack and delamination risk optimization of a Si-interposer for LED packaging

3D-integration becomes more and more an important issue for advanced LED packaging solutions as it is a great challenge for the thermo-mechanical reliability to remove heat from LEDs to the environment by heat spreading or specialized cooling technologies. Thermal copper-TSVs provide an elegant solution to effectively transfer heat from LED to the heat spreading structures on the backside of a substrate. But, the use of copper-TSVs generates also novel challenges for reliability as well as also for reliability analysis and prediction, i.e. to manage multiple failure modes acting combined – interface delamination, cracking and fatigue, in particular. In this case, the thermal expansion mismatch between copper and silicon yields to risky stress situations.To overcome cracking and delamination risks in the vicinity of thermal copper-TSVs the authors performed extensive simulative work by means of fracture mechanics approaches – an interaction integral approach within a simulative DoE and the X-FEM methodology to help clarifying crack propagation paths in silicon. The results provided a good insight into the role of model parameters for further optimizations of the intended thermal TSV-approaches in LED packaging applications.