GS标志

文章主要介绍了欧洲市场公认的德国安全认证标志-GS标志的概念及GS与CE、LVD的关系,并从发证机构、可认证的产品及认证的流程、认证周期等方面详细介绍了中国企业出口欧洲的产品如何获得GS标志.     

GS认证将强制加入PAHs的要求

在德国和欧洲,GS标志是最常见的第三方产品质量和安全认证标志,它已成为一个引导顾客购买行为的最有效工具之一。GS标志的适用产品范围非常广泛,主要包括：家电产品、信息产品、电动及手动工具、影像及音响产品、灯具产品、电子量测仪器、健身器材、玩具、家具等。     

GS认证介绍

GS的含义是德语”Geprufte Sicherheit”（安全性已认证），也有”Germany Safety”（德国安全）的意思。GS认证以德国产品安全法（SGS）为依据，按照欧盟统一标准EN或德国工业标准DIN进行检测的一种自愿性认证，是欧洲市场公认的德国安全认证标志。     

GS标志认证将强制加入PAHs测试

德国安全技术认证中心（ZLS）经验交流办公室（Central Experience Exchange Office,ZEK）AtAV委员会2007年11月20日通过诀议（参见ZLS官方网站上公告第ZEK01-08号文件）,要求在GS标志认证中强制加入PAHs测试,该项规定于2008年4月1生效,届时所有GS标志认证机构将开始加测PAHs项目。     

汇川技术:500kW储能变流器产品通过德国TV认证

正汇川技术继光伏500KW逆变器项目IPV800T500TL完成德国TV认证后,日前,光伏500KW储能变流器产品IES100T500也顺利完成德国TV认证,产品获准粘贴TV标志!TV标志是德国TV认证机构专为特定产品定制的一个安全认证标志,在德国和欧洲得到广泛的接受。近年来,国内的光伏行业客户越来越看重TV机构针对光伏产品的认证,视之为产品安全质量的保证,甚至成为了项目招投标的重要指标。     

德国GS认证的PAHs要求更新

正2014年8月份,德国的产品安全委员会(AfPS)发布了一份新的PAHs规范-PAHs Specification。APPS发布的PAHs规范是德国"设备和产品安全指令"-ProdS3G范畴的法令性文件。各个GS发证机构必须统一执行。PAHs规范现已生效并将于2015年7月1日起完全替代现行的ZEKO1.4-08文件强制实施。对于界定在PAHs要求适用范围内的产品,申请GS认证时,依据     

CCC认证产品与非CCC认证产品的差异（电子类）

1.标贴 CCC认证产品在产品标贴上都应该有CCC认证标志,而非CCC认证产品是没有CCC标志的。CCC认证产品标贴上有CCC认证标志与非CCC认证产品标志是完全不一样的。     

博士考考你

一、单项选择题1、"风筝标志"是()创立的世界上第一个认证标志。A.美国B.英国C.德国D.苏联2、国际认证委员会的英文缩写为()。A.CECC B.IEC C.CMC D.ICC 3、国际合格评定委员会的英文缩写为()。A.IEC B.CMC C.ISO D.CASCO 4、()是认证制度的基础,标准水平越高,被认证的产品的质量水平越高。A.技术标准B.工艺标准C产品标准D.检验标准5、中国顾客满意指数测评基本模型包含()个结构变量,形成()种因果关系。A.6、10 B.5、10 C.6、11 D.5、11     

CCC、CE、GS和UL认证程序要点

介绍了CCC、CE、GS、UL四种认证的性质及认证程序,分析了这四种认证程序的差异和认证注意事项,帮助企业加快产品认证过程和节约认证费用,使产品更快地投入市场.     

质量快讯

德国来茵TUV专题研讨会 2002年9月24日在东莞市举办。会议由德国莱茵“南中国集团”和中国赛宝(总部)实验室主办,巨流传媒《电子质量》杂志社协办。会上,针对IT/AV出口产品国际认证及国家对产品安全要求,首先由德国莱茵“南中国集团”广州分公司和中国赛宝实验室的专业人员分别作了技术性讲解,同时,在每个课题后进行自由提问,随意研讨,主要内容包括1.IT/AV产品的EMC(电磁兼容)技术标准2.IT/AV产品的LVD(低电压指令)技术标准;3.IT/AV产品的国际认证概述,其中国际认证包括欧洲CE、GS、EMC认证;美国、加拿大国家产品认证;澳大利亚国家认证;日本的新产品安全法及认证;阿根廷产品认证等。 出席研讨会的来自各IT/AV企业质量管理及相关专业人员约80人。《电子质量》编辑部人员和与会者进行了交流探讨。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm