平面全息光弹性在地震工作中的初步应用

应用海城、唐山、莒县、平陆、荷泽地震的断层模型进行了激光全息光弹实验研究。实验结果获得了应作的等和线和等差线条纹图。 本文描述了唐山地震的实验结果,其结果与唐山地区地震地质资料基本相符。1.唐山等和线和等差线条纹图显示出三个应力集区,与唐山的主震和余震位置一致。2.唐山主应力轨迹线方向为东北方向。这个方向与华北现代构造应力场主压应力方向一致。 激光全息光弹实验方法可以用来探讨不同的构造形态在不同边界条件下的应力分布和变化,从而为较大地震预报提供线索。     

光弹学条纹分离及空间内应力测量

本文对光弹学包括干涉光弹及全息光弹的应力分析作了扼要的综合评述。指出等厚性与等差线的全息光弹法分离成功是实验上的一个突破。同时提出了用光学信息处理技术分离等厚线与等差线的新方法。     

一种新的InSAR合成相位展开算法

提出一种新的InSAR二维相位展开方法。该合成算法充分利用了枝切法和有限元方法的优点。方法的核心是确定相位可靠区域与不可靠区域,有效避免了相位误差从不可靠区域向可靠区域的传递,保证了可靠区域相位展开结果的精度,较大程度上提高了整体的相位展开结果精度。仿真数据实验结果验证了这种合成算法的有效性。     

弹光调制干涉图的预处理及相位校正方法

弹光调制傅里叶变换干涉信号是高速、连续非线性变化。为了实现等时间采样干涉信号的准确光谱重建,有必要对弹光调制干涉信号的预处理技术和相位校正方法进行研究。为了从连续的干涉数据中获取一幅完整的干涉图,文中利用干涉图零光程差点的幅值最大特性,获取一幅完整的干涉图。同时,为了克服干涉图的非对称性,提出将改进的Mertz相位校正方法与非均匀快速傅里叶变换算法（NUFFT）相结合,提高重建光谱的速度和准确度。在实验中,通过仿真产生300 K红外黑体的非对称弹光调制干涉图,采用该数据处理方法提高了重建光谱的精度,并以大气窗口为被测对象,比较准确地重建了大气光谱曲线,实现了气体成分的定性分析。     

基于电压补偿的弹光调制器稳定性控制方法研究

弹光调制器是由各向同性的弹光晶体和压电晶体组成的热机电耦合器件,其谐振频率随温度变化存在严重漂移,导致弹光调制器工作不稳定。为了实现弹光调制干涉信号的相位延迟量沿正弦规律变化,有必要对影响弹光调制干涉仪的稳定因素进行分析与控制。针对此问题,在建立弹光调制器振动模型和频率温漂模型的基础上,提出了基于数字锁相技术的驱动电压自调节方法。在该方法中,根据弹光调制干涉信号的四倍频与二倍频的比值,基于FPGA调节DDS输出方波信号的占空比以稳定弹光调制干涉信号的相位延迟量。实验结果表明,驱动电压自调节时的相位延迟量变化幅度为0.6%,电压一定时相位延迟量幅度下降了15.6%,证明该方法有效的稳定了相位延迟量,从而提高了弹光调制器的稳定性和调制效率。     

基于双谱理论的雷达辐射源指纹特征提取

针对雷达辐射源指纹特征提取困难的问题,提出了基于双谱切片法和双谱围线积分法,提取辐射源指纹特征的方法。介绍了二相编码信号的无意调制,仿真了理想情况和含有相位噪声的二相编码信号的时域波形。阐述了含相位噪声雷达信号的双谱估计,仿真了含相位噪声的二相编码信号的双谱图及等高图。最后利用双谱切片法和双谱围线积分法,提取了辐射源的指纹特征,通过计算机仿真实验验证了该方法的可实施性。     

利用相移条纹相位解调的广角镜头畸变校正

文中提出了一种基于相移条纹图相位分析的广角镜头畸变校正方法。首先,用大尺寸液晶平板显示器显示四幅相移量为π/2的余弦条纹图作为校正模板。然后,用广角镜头相机拍摄该校正模板,获得四幅畸变条纹图,使用四步相移算法解调径向畸变条纹图的相位分布。由于经广角镜头成像的图像中心区域几乎无畸变,利用图像中心无畸变的相位值进行数值拟合得到径向无畸变条纹图的相位分布,作为求解径向畸变相位的基准,也就是径向畸变相位分布可以根据径向畸变条纹图的相位分布与径向无畸变条纹图相位分布相减得到,再将畸变相位转换成实际的畸变量。提出的方法不需要通过特征点或特征线确定畸变模型,可以直接计算畸变图像中每个像素点的畸变量。实验结果表明,提出的方法简单、有效,具有广泛应用价值。     

弹光调制非线性光程差干涉信号的快速反演

为了提高弹光调制中非线性光程差干涉信号的光谱反演效率,采用非均匀快速傅里叶变换算法对弹光调制相位非均匀采样干涉信号反演光谱进行了仿真,得到1024点反演速率较直接计算提高20倍,平均误差达到0.87%的结果。结果表明,该算法可实现弹光调制干涉信号的快速、高精度反演,给硬件实现弹光调制反演光谱提供了一定的参考依据。     

用于机械的线结构光三维轮廓相位测量

现代工业发展要求提供高质量的机械产品,三维轮廓测量方法有助于机械轮廓检测的完整度,但机械三位轮廓相位测量存在测量精度低等问题,基于此,提出用于机械的线结构的光三维轮廓相位测量方法。依据线结构光在三维轮廓相位测量中的工作原理,计算机械三维轮廓表面每点的相位差;将投射在机械三维轮廓表面的变形光栅条纹采用傅里叶变换方法,获取频域滤波的频谱,获得机械三维轮廓相位值;通过灰度图对机械三维轮廓相位发生非正常跳变的区域进行识别,确定机械相位非正常跳变区域。在此基础上,采用密度等值方法优化离散点密度,构建机械轮廓相位对应的尺寸优化模型,实现用于机械的线性光三维轮廓相位测量。实验结果表明:采用所提方法进行机械的三维轮廓相位测量的精度较高,测量的耗时短。     

基于V-视差法的道路区域检测算法研究

针对当前基于双目视觉的道路环境分析实时性差、检测不准确等问题,提出了一种改进V视差法的道路区域检测算法。该算法首先对原始图片进行车道线检测确定道路消失点,从而确定图像的感兴趣区域。然后,使用极大最小值约束获取V视差图中的斜线,从而提取道路区域。实验结果表明,由于该方法在确定感兴趣区域后计算原始视差图,因此,速度提高了29.71%,且相对于传统V视差法,算法更好地实现了路面分割;同时,障碍物检测的精确率和召回率两个指标分别提高了2.165%和4.837%。基于该算法具有良好的准确性和实时性,能有效识别道路中的障碍物,因此,可以为车辆提供可行驶区域以及为驾驶员提供辅助作用。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.