新一代多媒体实时通信系统架构增强演进研究

随着5G和5G-Advanced网络的演进发展,多媒体实时通信业务正在向超清化、交互式、沉浸式及开放性趋势发展,对现有基于IP多媒体子系统(IP multimedia sub system,IMS网络)的多媒体实时通信系统提出了架构和网络能力方面的增强需求。对实时多媒体通信系统架构的增强技术进行了研究和探讨,通过引入基于IMS网络架构的交互式通信通道技术,提出了服务化统一媒体面和三方标识认证的架构及流程,更好地满足个人和行业用户多样化、沉浸式多媒体实时通信体验需求。同时提出了一种多媒体实时通信网络新架构,对多媒体实时通信的控制面架构进行演进重构,提供更为简化、灵活和开放的会话控制、会话路由、媒体面管理、业务调用、业务组合机制。     

基于云XR的沉浸式游戏平台关键技术与架构研究

沉浸式游戏是云XR技术落地应用的典型场景,为用户带来沉浸式、可视化、实时人机交互的体验.本文从实现商用化沉浸式游戏业务平台的角度出发,研究分析了云端并发承载、端云异步渲染与远程交互映射等关键技术,并提出一种实用的沉浸式游戏业务平台架构,对后续的技术研发工作提供参考和借鉴.     

泛在融合网络下的个性化业务动态合成技术研究

在融合多种异构网络的泛在网络中,网络需要实时地发布、发现、聚合和适配多样的个性化业务。个性化业务动态合成能快速搜索合适业务组件进行协同工作以满足丰富多彩的用户体验。本文首先基于SOA架构对业务合成进行建模．然后引入由调用监控器、业务路由器、业务发现器和接口适配器四部分组成的基于用户活动的动态业务融合管理器,并对其内部的各个功能模块进行了具体的说明分析,最后设计场景描述了个性化业务动态合成的工作流程。     

电子小说阅读器的设计与实现

随着网络技术的发展,电子小说具有小巧轻便、易于传播、方便阅读和携带的优点,在世界上有很大的用户群体。文中设计的这款基于B/S架构的小说阅读器旨为用户提供一个组织、分享、阅读电子小说的工具,简洁易用。小说阅读器通过分类和书架两种方式有效地管理小说,用户可以对小说进行阅读和评论,并实时保存阅读进度,通过应用S2SH框架和成熟的Ajax技术,用户可获得流畅、舒适的阅读体验。     

移动流媒体QoE指标体系构建和量化

随着3G技术的逐步成熟,移动流媒体业务已成为移动业务研究的热点。业务质量的优劣直接影响用户的使用感受,因此对于移动流媒体业务性能的评估只注重业务的QoS机制的改善和提高是不够的,更要注重用户体验满意度的提升。文章分析了移动流媒体业务QoS的影响因素,并基于服务等级协议SLA以及TMF提出的QoE性能指标参考,建立了由QoS关键性能指标到QoE映射的架构,同时提出了一种可量化移动流媒体业务QoE的方法,为服务商提升用户体验质量提供参考。     

身份管理技术及其发展趋势

随着电信网和互联网服务的急速发展,身份管理(IDM)技术作为建立用户与服务提供商信任关系的纽带,受到广泛的关注.IDM通过用户身份在不同业务中的共享,明显提升用户对业务的体验效果,促进业务的繁荣和发展,提高网络的安全性.本文详细论述了IDM技术的通用架构,并对IDM国内外技术标准的进展、相关产品的功能进行了介绍.     

浅析无线网络的用户体验质量建模及性能优化

随着移动互联网业务的蓬勃发展,用户需求日益多样化,不断涌现各种无线新业务。如何提供良好的用户体验质量(QoE),是无线新业务是否获得成功的关键,同时也是衡量用户对业务认可程度的重要方式。文章首先对无线业务用户体验质量的影响因素和评价方法进行了介绍,然后分析了各种方法的特点和缺陷,并进一步总结了基于用户体验质量的性能优化领域的研究现状,最后展望了未来的研究前景。     

一种互联网业务质量拨测系统的设计方案

随着互联网产业的大力发展,在全业务运营的格局下,互联网业务保障是保证竞争力的关键,在提升互联网网络质量的同时,更要重视提升互联网用户满意度。本文提出了一种互联网业务质量拨测系统,用以获取用户真实体验信息。介绍了该系统的实现目标,并提出了包括系统总体结构方案、系统硬件架构和系统软件架构设计在内的一整套设计方案,可以实现对网络性能进行拨测、及时告警和提供性能分析报告等功能。     

面向QoE的LTE网络故障定位与优化技术

为了保障LTE网络流媒体业务的用户体验质量（Quality of Experience,QoE）,提高用户对业务的满意度,需要实时监测终端用户的用户体验质量,且需要在用户体验质量下降时,实施网络故障定位与优化,确定引起用户体验质量下降的网络故障,并针对网络故障实施具体的优化措施,使用户体验质量恢复到正常水平。但随着移动网络规模的扩大,网络参数种类和数据量的增加,人工的运维和优化方式已经不能满足日常运维的工作需要。针对这一问题,笔者提出了一种面向QoE的LTE网络故障定位和优化方法,提出了基于K-近邻机器学习算法的故障定位模型,并针对网络带宽不足和信号强度过低两种故障,提出了基于保证比特率（Guaranteed Bit Rate,GBR）的带宽保障方法和基站发送功率调整方法。仿真结果表明,所提故障定位和优化系统能够很好地实现移动终端流媒体业务的用户体验质量的监测和用户体验质量下降后的自动定位和优化。     

学分银行信息平台架构设计

本文通过对学分银行组织架构、业务模式和用户群体深入分析后,提出基于云计算技术的学分银行信息平台架构设计,并结合应用环境的多样性探讨了平台研发和实施过程中的关键技术。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.