高密度可编程逻辑器件ATV2500H／L简介

近年来，随着集成电路技术的飞速发展，出现了一种用户可定义其逻辑功能的器件－可编逻辑器件，简称ＰＬＤ器件。其发展经历了ＰＲＯＭ、ＦＰＡＬ、ＰＡＬ、ＧＡＬ，直至现在广泛应用的大规模ＰＬＤ器件ＥＰＬＤ、ＣＰＬＤ及目前最流行的可编程逻辑门阵列ＦＰＧＡ。本文详细介绍了美国受特梅尔公司的ＥＰＬＤ－ＡＴＶ２５００Ｈ／Ｌ的内部结构和功能特点。读者只要再学会ＴＡＮＧＯ－ＰＬＤ、ＡＢＥＬ、ＣＵＰＬ等语言中的一种，便能     

基于EDA技术的CPLD／FPGA应用前景

结合电子设计自动化（ＥＤＡ）教学与实践情况,讨论了复杂可编程逻辑器件／现场可编程门阵列（ＣＰＬＤ／ＦＰＧＡ）器件的特点及应用前景,分析了目前电子设计领域中微控制器或单片机（ＭＣＵ）存在的问题,指出了基于ＥＤＡ的ＣＰＬＤ／ＦＰＧＡ的应用和技术推广将是我国未来电子设计技术发展的主流。     

FPGA／PLD器件应用前景

在大规模ＦＰＧＡ／ＰＬＤ器件用在ＡＳＩＣ的原型实验中，有些问题需要解决，ＩＳＰ型ＦＰＧＡ／ＰＬＤ引人瞩目。ＦＰＧＡ／ＰＬＤ的成本优势增加ＦＰＧＡ／ＰＬＤ（现场可编程门阵列／可编程逻辑器件）的用途有两种：一是用于最终产品；一是用于ＡＳＩＣ（专用集成电路）化前道工序的开发试制品。小型ＰＬＤ（２０脚的１６Ｖ８型、２４脚的２２Ｖ１０型等）的价格已经理顺，用于解码器或序列发生器等的电路中，已经为批量生产的产品所采用。然而，中大规模ＦＰＧＡ／ＰＬＤ，还需要同门阵列进行一番成本比较之后，才有可能用于批量生产的…     

Lattice收购Agere FPGA今后业务重心将转向FPSC

ＣＰＬＤ与ＦＰＧＡ两全其美今年１月 １８日,Ｌａｔｔｉｃｅ斥资 ２．５亿美元收购了Ａｇｅｒｅ系统公司的ＦＰＧＡ(现场可编程门阵列)业务。Ｌａｎｔｔｉｃｅ一直是ＣＰＬＤ(复杂可编程器件)领域的重要厂商,１９９９年６月还曾并购过从ＡＭＤ分离出来的Ｖａｎｔｉｓ公司,拓展了Ｌａｔｔｉｃｅ在ＣＰＬＤ方面的实力。如今公司在ＰＬＤ(可编程逻辑器件)市场的两大领域——ＦＰＧＡ和 ＣＰＬＤ均站稳了脚跟。     

可编程ASIC编程优化问题

探讨了对可编程器件ＦＰＧＡ、ＣＰＬＤ编程时的编程优化问题。主要阐述了ＶＨＤＬ语言描述硬件逻辑时，不同描述方法对 ＡＳＩＣ逻辑综合结果的不同影响；同时针对 ＣＰＬＤ和 ＦＰＧＡ二者在结构上的差别，给出可编程ＡＳＩＣ实现时的约束项的优化。     

FPGA/CPLD可编程逻辑器件的发展前景

1　引言可编程器件即部分功能可由软件程序更改的器件 ,主要有Ｘｉｌｉｎｘ公司的ＦＰＧＡ器件系列和Ａｌｔｅｒａ公司的ＣＰＬＤ器件系列 ,它们开发较早 ,占用了较大的ＰＬＤ市场。随着数字逻辑系统功能复杂化的需求 ,集成电路本身在不断地进行更新换代。 10年前 ,其规模为每平方英寸 1万个门电路 ;现在已达到平均每平方英寸10 0万个门电路 ,因而出现了现场可编程逻辑器件(ＦＰＬＤ) ,其中应用最广泛的当属现场可编程门阵列(ＦＰＧＡ)和复杂可编程逻辑器件 (ＣＰＬＤ)。这里的ＦＰ ＧＡ/ＣＰＬＤ实际上就是一个子系统部件 ,这种芯片受到世…     

优势，从这里开始尽情展现──记美国著名FPGA厂商Actel公司

优势，从这里开始尽情展现──记美国著名ＦＰＧＡ厂商Ａｃｔｅｌ公司陈健半导体工业作为电子工业中发展最快的一个部分，竞争的激烈性日趋显著。而可编程逻辑器件领域的竞争激烈程度更为突出。ＴＴＬ、Ａ－ＳＩＣ、ＧａｔｅＡｒｒａｙ、ＰＬＤ（ＣＰＬＤ）及ＦＰＧＡ等，...     

EPLDXC7300系列简介

ＥＰＬＤＸＣ７３００系列简介福州高奇电子科技有限公司李东星，陈小牧福州大学无线电系林真以前市面上流行的通用逻辑器件及小规模ＰＡＬＧ上Ｌ器件在很多产品的设计中将让位于大规模可编程器件，如ＢＰＬＤ刀ＰＧＡ，美国ＸＩＬＩＮＸ公司是专业设计和生产ＥＰＬＤ，Ｆ...     

0.13μm时代的铜布线工艺与课题

关于铜布线器件海外数家厂 商已经有产品发布。在世界上最先批量交付铜布线器件的ＩＢＭ与Ｍｏｔｏｒｏｌａ并列其名，而与该两家公司可比的Ｆｏｕｎｄｒｙ厂商及ＰＬＤ／ＦＰＧＡ制造商的动向也引人注意，尤其是ＵＭＣ（联电）与Ｘｉｌｉｎｘ已进行了铜布线工艺的共同开发，并开始交付采用其成果的ＦＤＧＡ。此外，ＴＳＭＣ（台积电）从２０００年第４季度开始按 ０．１３μｍ工艺生产，并实现了各层铜布线。用同样工艺，Ａｌｔｅｒａ已批量生产ＰＬＤ等产品。ＣｈａｒｔｅｒｅｄＳｅｍｉｃｏｎｄｕｃｔｏｒ　Ｍａｎｕｆａｃｔｕｒｉｎｇ也…     

半导体长波长异质结构材料光压谱测试探讨

本文介绍了ＩｎＰ、ＩｎＧａＡｓ、ＩｎＧａＰ、ＩｎＧａＡｓＰ等的光压港（ＰＶＳ）。并把ＩｎＧａＡｓＰ（在特定组份下）的ＰＶＳ与ＦＦＴ—ＰＬ谱进行了比较；分析和讨论了ＰＶＳ测试的局限性和复杂性；指出了对多层异质结构材料，只有把器件结构、外延工艺、ＥＣＶ测试等结合起来，才可能正确地理解ＰＶＳ给出的测试结果。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-