基于航空偏振数据的地表BPDF模型优化研究

针对航空偏振气溶胶反演涉及的地表双向偏振辐射分布函数（BPDF）特性问题,分析了地表双向偏振反射分布物理机理,结合经典地表BPDF模型参数特点,提出了基于阴影方程和归一化植被指数的优化地表BPDF模型。利用航空辐射偏振遥感数据,验证了新模型的精度,相对于实测结果,平均相对偏差小于9.9%。与三种经典模型模拟结果相比,新模型值随不同观测角度变化时,其一致性很好。根据新模型精度,还模拟了地表偏振反射率偏差与气溶胶光学厚度反演误差的关系,发现地表偏振反射率偏差为4×10-4时,带来反演气溶胶光学厚度误差小于0.03,满足气溶胶偏振反演应用要求。     

基于MODIS数据反演高反射率地区气溶胶光学厚度的方法研究

针对高反射率地区地表反射率难以确定的难点,假设在不同年间同一天相同地物的两个不同波段的比值近似相等的前提下,借助几何光学模型理论,应用MODIS历史产品和数据,即MODIS地表反射率产品(MOD09)、历史MODIS图像第七波段的地表反射率和待反演地区的MODIS第七波段的地表反射率数据计算出待反演地区的MODIS其他波段的地表反射率,然后结合利用6S辐射传输模式计算建立的查找表,可实现待反演区域的气溶胶光学厚度的反演.以北京市区为例,应用该方法实现了北京市区的气溶胶光学厚度反演,并把反演结果与AERONET观测站的结果进行了对比,对比发现该反演方法对亮区域有效,其误差在30％以内.     

红外预警卫星探测波段地球背景辐射仿真研究

针对红外预警卫星探测波段遥感数据难以获取的问题,研究了基于地表温度反演的红外预警卫星探测波段地球背景辐射仿真方法。采用了通用型单通道算法对FY-3/MERSI数据集进行地表温度反演,得到了全球地表温度分布图。在此基础上,构建了地表红外辐射模型,充分考虑了海拔、大气模式、地表类型等因素对地表辐射的影响,利用MATLAB与MODTRAN进行联合编程完成每个像元对应的地表辐射计算,实现了红外预警卫星探测波段地球背景辐射场景的图像生成。仿真结果表明:仿真图像分辨率高,能够准确反映红外预警卫星探测波段的地球背景辐射特性,可为研究红外预警卫星作战效能评估和目标识别技术提供场景数据支撑。     

短波红外垂直失水指数对大气效应的敏感性分析

在业务应用中,用光学遥感方法反演地表土壤水分时常常会因受到大气效应的影响而降低精度。利用中分辨率成像光谱仪(Moderate Resolution Imaging Spectroradiometer.MODIS)的卫星观测数据、相应的地表反射率产品以及辐射传输模型模拟方法,评估了短波红外垂直失水指数(Shortwave Infrared Perpendicular Water Stress Index,SPSI)对大气效应的敏感性。结果表明,大气效应会使近红外和短波红外波段的反射率呈线性增加,但对由近红外和短波红外波段组成的光谱特征空间中的典型三角形分布以及像元间几何关系影响较小,能够在一定程度上补偿大气效应对土壤水分反演的影响。因此,在实际的区域化应用中,可以不考虑大气效应给SPSI指数计算及土壤水分反演带来的不确定性,从而简化业务流程。     

地雷对土壤表面红外辐射的影响

地雷排除一直是较难解决的问题。利用红外系统对地雷进行探测,主要取决于地雷与背景间的红外辐射差异。首先通过热平衡方程分析了影响地表温度的主要因素,以一维热传导方程为模型分析了埋设地雷对地表温度的影响。计算了地雷上方土壤与周围土壤的表面温度在一天中随时间的变化,并且与实际测量值进行了比较。在此基础上,利用高斯模型对实验数据进行了拟合分析,通过拟合模型可得到地表温度随时间的变化关系。结果表明,仿真地雷会使土壤层之间正常的热传导被阻断,造成地雷上方的土壤与周围土壤之间存在一定的温度差异;这种温度差异可以通过红外技术进行分辨。     

近岸攻击中沿海地表背景温度场建模研究

空舰导弹红外导引头识别近岸攻击舰船目标时,沿海地表复杂的红外辐射对导引头识别舰船目标造成了障碍。根据沿海地表的特点,建立了沿海地表背景温度场计算模型,研究了太阳、大气、海面等对沿海地表红外辐射的影响,选择了3种典型的沿海地表,对其温度日变化情况进行了数值计算,给出了初步的计算结果。经过与实测值的比较表明,所建模型可以较好地模拟沿海地表温度随各气象参数的变化情况。     

基于大气辐射传输模型的地物偏振反射率反演方法

提出一种基于大气矢量辐射传输模型的地物偏振反射率反演方法.利用辐射传输模型,建立地表反射率、观测条件与传感器入瞳处辐亮度偏振态的查找表,再进行查找表反查及数值计算,完成偏振反射率反演.验证实验表明,典型地面目标物的偏振反射率反演精度可达到90%.     

中红外双通道夜间数据地表温度反演方法

地表温度反演是红外定量遥感的核心内容之一.与热红外(8~14μm)数据相比,中红外(3~5μm)波谱区大气透过率更高、对发射率的敏感性更低,在温度反演方面具有独特的优势.引入热红外地表温度反演思路,发展了仅利用夜间中红外双通道数据的地表温度反演算法,分析了宽通道组合(3~4μm和4~5μm)和窄通道组合(3.929~3.989μm和4.020~4.080μm)模式下的温度反演精度以及模型对噪声和发射率的敏感性.结果表明,宽、窄两种通道组合模型的温度反演精度分别为~0.5 K和~0.3 K;噪声等效温差和地表发射率误差对窄通道组合模型的影响更大.     

自然环境下地表红外辐射特性对比研究

根据自然环境下地表的热平衡方程，建立了计算地表热红外辐射特性的理论模型。利用温湿耦合 原理，对于表热特性 及辐射特性随含水量的变化给予了充分的考虑。给出了不同地表辐射温度的周日模拟计算结果，并进行了对比和分析，结果表明，在相同的自然环境下，不同地表的热红外辐射特性有一定的差别。尤其是人工地表和自然地表之间热红外辐射特性在白天相关较大。     

敦煌辐射校正场地表反射率稳定性分析

辐照度基法确定卫星各波段的定标系数时,要求精确测量辐射定标场的地表反射率和漫射辐射度与总辐射度的比值。中国科学院通用光学定标与表征技术重点实验室分别于2013年6~8月及2014年8月期间,协同其他单位在敦煌校正场运用辐照度基法进行场地辐射定标,实测过程中使用ASD、SVC光谱辐射计,运用野外参考板反射率因子法确定敦煌校正场的地表反射率。详细阐述地表反射率测量方式及数据处理方法,根据实地观测数据,分析当前场区的地表反射率并与历史数据相互比对。结果显示,敦煌校正场地表反射率在时间和空间上均保持良好的稳定性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.