图像传感器非均匀性的三步校正法

分析了图像传感器光电响应非均匀性的特点,根据图像传感器理想光电响应的特点提出了基于最小二乘法的图像传感器非均匀性的三步校正方法.首先在固定辐照度下,用最小二乘法校正各个光敏单元的非均匀性;其次利用不同辐照度下的响应值,应用最小二乘法拟合求得各个光敏单元的响应曲线和理想响应曲线;最后通过直线校正达到对各个光敏元件在不同辐照度下的非均匀性校正.实验结果表明该算法能够有效地校正图像传感器的非均匀性,且简单实用,便于工程实现.     

基于伽马压缩的红外图像非均匀性校正算法研究

针对红外探测器输出12位像素深度响应,而数字图像显示通常为8位的情况,提出一种基于伽马压缩的非均匀性校正算法。该算法利用自适应伽马曲线将探测器输出的响应进行压缩,然后基于两点校正对中低温图像和高温图像运用不同的校正系数进行校正。实验结果表明:该算法的非均匀性校正效果好,能够将传统两点校正方法校正后的残余非均匀性降低20%左右,校正后的中低温图像细节信息丰富,层次感强。     

CMOS图像传感器非均匀性实时校正算法研究

讨论了两点校正法的原理和算法,并针对高速CMOS图像传感器LUPA300,以FPGA作为系统硬件载体设计了非均匀性校正系统,进行实时非均匀性校正.实验结果表明,该系统能够有效地实时校正图像传感器的非均匀性,输出图像质量较高.     

一种新的红外焦平面器件非均匀性校正技术研究

在分析了红外焦平面阵列响应特性的基础上,提出了一种新的基于图像配准技术的"S"型曲线正交拟合算法,对红外焦平面阵列非均匀性进行自适应校正.仿真结果表明,该方法能有效地消除CCD像元响应不一致给图像带来的干扰,得到清晰的图像.     

基于转向核的单帧红外条纹非均匀性拟合校正算法

针对红外线列和非制冷型焦平面成像系统存在列向条纹非均匀性的现象,提出了一种基于转向核的单帧条纹非均匀性校正新算法。首先,根据图像边缘的梯度特性确定转向核邻域主方向和大小,然后将每列像素的转向核估计值作为该列像素的期望值,以列向条纹非均匀性作为约束进行最小二乘拟合,计算得到每列像元的校正参数,并以一定概率接受最小二乘拟合的结果。当误差函数满足事先设定阈值时,单帧图像的非均匀性校正完成。实验结果表明,该算法具有稳定的收敛性,与同类算法相比能够更有效抑制条纹非均匀性,并且能够保留更多的图像边缘信息。     

基于改进伽马曲线的星载长波红外焦平面非均匀性校正算法

随着长波红外探测器技术的进步,通过选用宇航级大阵列长波红外探测器,天基红外遥感卫星技术得到快速发展。长波红外探器响应强非线性导致传统的基于线性模型的非均匀性校正算法校正误差大,从而影响卫星在轨使用效能。针对该问题,结合大量实验室数据和卫星在轨数据的统计分析结果,建立了一种新的长波红外探测器非线性响应模型,据此提出了一种基于改进伽马曲线的非均匀性校正算法,以有效克服探测器响应强非线性对校正精度的影响。该算法首先建立基于改进伽马曲线的探测器非线性响应模型,依据此模型对获取图像进行非线性压缩映射,实现探测器响应的线性化,然后利用星载基于定标技术的线性化算法实施非均匀性校正,同时,定标温度点根据所建立模型参数动态更新,最后通过逆非线性化压缩映射还原出实际的非均匀校正后的图像。基于人造黑体和在轨实景红外图像的实验结果表明,该算法有效解决了探测器响应强非线性对校正精度的影响,校正后图像的视觉效果和定量化指标均优于传统的星载非均匀校正算法。     

电阻阵列非均匀性校正算法实时性研究

非均匀性是电阻阵列输出图像固定噪声的主要来源,非均匀性校正是电阻阵列应用于半实物仿真中图像实时生成的一个不可缺少的环节.通过对校正算法的分析,设计算法实时性测试系统,并对校正在线算法进行改进,满足200Hz的帧频要求.在两种硬件平台方案下对算法的实时性进行测试,测试结果说明:非均匀性校正算法是影响动态红外图像生成实时性的一个重要因素,采用专用的硬件计算设备是提高整个系统实时性的必然选择.     

灰度校正在红外序列图像拼接中的应用

为满足红外图像无缝拼接的需要,提出了一种基于红外序列图像的灰度非均匀性校正算法.该算法利用灰度非均匀区域的相对稳定性,通过对拍摄的大量红外序列图像求平均,获得相机灰度校正的模板图像.然后利用此模板对各帧图像进行校正,实现在同一幅度照射下各像素灰度的一致性.最后利用由HJRG-001型红外热像仪获得的红外视频图像序列进行...     

一点定标与小波变换相结合的红外非均匀校正算法

分析了一点定标,两点定标及小波变换的特点,针对一点定标、两点定标存在的问题,提出了一点定标与小波变换相结合的红外图像非均匀校正算法.利用红外非均匀响应既包括加性噪声又包括乘性噪声的特性,对需要校正的图像先进行一点定标校正去除加性噪声,再通过小波变换对乘性噪声进行处理.并通过实验仿真结果证明该方法的校正精度达到了两点定标校正法的校正精度,可以有效地进行非均匀性校正.     

反射式拼接CCD相机非均匀性定标与校正

依据实验室辐射定标实验,校正反射式拼接CCD相机由渐晕现象引起的图像非均匀性。通过分析反射式拼接CCD相机成像非均匀性产生机理,明确焦平面辐照度非均匀性是造成相机图像非均匀性的主要原因;分别进行"单片CCD辐照度响应度定标"和"整机均匀性定标"实验;依据定标结果所得出的入射辐射亮度和在该亮度下每个像元实际接收到的辐射照度之间的关系,设计校正算法,得出每个像元的渐晕校正因子,实现渐晕图像非均匀性校正。校正结果显示:在一定入射辐射亮度范围内,原始积分球定标渐晕图像的非均匀性大于16%,用校正因子校正后,输出图像非均匀性下降到1%以内。经过非均匀性定标和校正的相机用于外场成像也取得了符合工程需要的满意效果。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its