微波促进铬(Ⅲ)催化降解甲基橙的研究

重金属与难降解有机污染物形成复合污染物,一些重金属离子也能催化H2O2产生·OH。利用微波加热的热效应和非热效应,以甲基橙溶液为模拟偶氮染料废水,研究了微波功率、微波辐射时间、pH值、Cr（Ⅲ）和H2O2浓度等因素对甲基橙脱色率的影响。研究表明,Cr（Ⅲ）能与H2O2形成类Fenton试剂,产生·OH,在微波的促进作用下,矿化有机物的原理。1 000 mg.L^-1的甲基橙溶液,在H2O2浓度为12.0 mmol.L^-1、5 mmol.L^-1Cr^3＋溶液、pH=3、微波功率700 W下加热5 min,甲基橙脱色率达93%。     

微波促进H2O2脱色甲基橙溶液的研究

甲基橙是典型的偶氮染料之一。以甲基橙溶液模拟偶氮染料废水，探讨了在微波作用下，低浓度的甲基橙浓度、过氧化氢用量、溶液pH值、作用时问等因素对脱色率的影响。实验结果表明，微波能大大加快脱色反应速度，并能消除湿法氧化法可能产生的二次污染。微波功率为480W的条件下，酸性甲基橙溶液加入5％的H2O2作用5min，其脱色率可达到99．0％。对比甲基橙溶液处理前后紫外光谱的变化，说明经微波促进H2O2氧化后，甲基橙分子结构中的偶氮键发生断裂，破坏了偶氮-苯环共轭发色体系，从而达到了脱色的目的。     

微波诱导铬渣催化氧化降解甲基橙溶液的研究

采用微波-铬渣法、微波-铬渣-H2O2法处理甲基橙溶液。研究了铬渣用量、溶液初始pH值、微波辐照时间、处理后放置时间等因素对溶液TOC去除率的影响。研究表明,对于150 mL的TOC浓度为200 mg/L的甲基橙溶液,铬渣用量为1 g,H2O2(30%)用量为1 mL,溶液初始pH值在4~10范围内,微波功率80 W,微波辐照3 min,TOC去除率可达80%,处理后放置足够长时间,色度去除率可达100%。处理后溶液中残留Cr(Ⅵ)浓度小于0.05 mg/L。     

微波-Fenton法处理垃圾渗滤液的研究

微波法用于消除有机污染物,具有快速、高效、不污染环境的特点。实验采用微波促进Fenton法降解垃圾渗滤液中的有机污染物,研究了Fenton试剂用量、微波功率、微波作用时间和pH值等对化学需氧量(COD)去除率的影响。实验结果表明,微波Fenton法处理垃圾渗滤液能提高反应效率,有效降低垃圾渗滤液中的COD浓度。微波-Fenton法处理20 mL的COD浓度为896 mg/L的垃圾渗滤液的优化条件为:调节pH值小于3,加入6 mmol/L的硫酸亚铁溶液6 mL,加入1 mL的H2O2,在微波功率800 W下加热处理4 min,其出水COD浓度可降至200 mg/L。     

锐钛型纳米TiO_2光催化性能的研究

以TiCl4为原料,采用沸腾回流强迫水解法制备纳米TiO2,用XRD、TEM对粉体进行表征。采用甲基橙溶液进行光催化降解试验,研究了TiO2的煅烧温度、添加量以及溶液的初始pH值对光催化性能的影响。实验结果表明,当溶液pH=2,TiO2煅烧温度为600℃,添加量为0.8 g/L,光催化75 min甲基橙的脱色率为90.87%。     

SO2-4/Bi24O3固体超酸的制备及其可见光催化性能

采用水热法结合H2SO4浸泡处理成功合成了SO2-4/Bi2O3可见光催化材料, 并采用XRD、TG DTA和UV Vis等对合成产物的物相结构、热化学性能、光吸收性能以及可见光催化性能进行了研究, 对H2SO4浸泡工艺条件对产物的可见光催化性能的影响进行了探讨。研究表明, 水热合成产物为α Bi2O3、Bi2O4和Bi2O2CO3的混合物, 其中α Bi2O3为主要成分;H2SO4浸泡处理并未改变产物的物相结构, 但经H2SO4浸泡处理后产物的光催化性能得到了显著的提高, 并且H2SO4浸泡工艺条件对产物的光催化活性有着重要的影响。在实验范围内, 在浓度为0.5mol·L-1的H2SO4溶液中浸泡75min, 再经700℃热处理4h可制备出具有较佳光催化活性的产物, 经75min可见光的照射后对甲基橙溶液的光催化脱色率可达93.1%。     

SO_4~(2-)/Bi_2O_3固体超酸的制备及其可见光催化性能

采用水热法结合H2SO4浸泡处理成功合成了SO42-/Bi2O3可见光催化材料,并采用XRD、TG-DTA和UV-Vis等对合成产物的物相结构、热化学性能、光吸收性能以及可见光催化性能进行了研究,对H2SO4浸泡工艺条件对产物的可见光催化性能的影响进行了探讨。研究表明,水热合成产物为α-Bi2O3、Bi2O4和Bi2O2CO3的混合物,其中α-Bi2O3为主要成分;H2SO4浸泡处理并未改变产物的物相结构,但经H2SO4浸泡处理后产物的光催化性能得到了显著的提高,并且H2SO4浸泡工艺条件对产物的光催化活性有着重要的影响。在实验范围内,在浓度为0.5mol·L-1的H2SO4溶液中浸泡75min,再经700℃热处理4h可制备出具有较佳光催化活性的产物,经75min可见光的照射后对甲基橙溶液的光催化脱色率可达93.1%。     

微波诱导粉煤灰-H2O2处理垃圾渗滤液的研究

Fenton和类Fenton试剂广泛用于持久性有机污染物的矿化处理。微波辐射能提高Fenton和类Fen-ton法处理难降解有机废水的效率和处理能力。实验采用粉煤灰吸附分离与微波高级氧化的组合工艺处理垃圾渗滤液,以降低垃圾渗滤液的化学需氧量(COD)浓度。粉煤灰作为有机废水的吸附剂,同时粉煤灰中溶出的铁及其他过渡金属离子能与H2O2形成Fenton类试剂,产生氧化能力极强的羟基自由基(.OH),氧化处理其中的有机物。当粉煤灰量为20 g/L,pH=2,搅拌1 h后过滤分离;每1 L滤液加入2 mL 30%(质量比)的H2O2,入微波炉,设定温度80℃,功率600 W,在微波中作用20 min时,COD的去除率可达69.81%。     

纳米BiVO_4的微波合成及其光催化性质

以五水硝酸铋和五氧化二钒为原料,通过微波合成法制备了纳米BiVO4,采用X-射线衍射(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)表征了样品的形貌、结构和特性。XRD表明所制备的样品是纯的单斜晶型BiVO4;SEM显示样品的形貌呈层状结构;TEM进一步指出这些片层结构是由小粒子聚集而成的多孔结构。以催化降解甲基橙来考察其光催化性能。在100mL的10mg/L甲基橙溶液中加入0.12g经673K恒温热处理2h后的BiVO4及0.2mL H2O2,调节pH值为3.0,在可见光下照射90min后,降解率达到94.70%,催化性能良好。     

微波加热对自来水中细菌杀菌效果的研究

微波杀菌效果与杀菌时间、微波的功率有相关关系.微波杀菌足非热效应和热效应的共同作用,本文主要探讨家用微波炉加热与电炉加热对自来水中细菌的杀菌效果.实验表明,温度在29.0℃～72.0℃时微波加热杀菌效果明显优于电炉加热的杀菌效果,说明微波具有明显生物非热效应杀菌的功能;温度在67.2℃以下时,微波持续辐射的杀菌效果明显优于问断辐射的杀菌效果.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.