无人机光电侦察、监视技术研究

无人机是获取战场情报、进行监视和侦察活动的最佳平台,已成为未来战争中的重要武器,而其情报、监视和侦察能力的提升更依赖于无人机光电系统技术的发展.从无人机的侦察、监视任务出发,详细介绍了无人机上的各种光电侦察,监视设备,并分析了各种光电设备的优缺点和应用现状;系统研究了无人机光电系统的侦察、监视技术,并对无人机光电系统的搜索、跟踪等关键技术进行了详细研究;最后对无人机光电系统的发展趋势加以预测和展望.     

平流层飞艇预警探测技术进展及应用展望

分析了平流层飞艇预警探测系统总体集成、飞艇平台及任务载荷涉及的关键技术,总结了国外典型平流层飞艇预警监视项目的研制和试验进展情况。针对平流层飞艇预警探测系统的特点,提出了其基本组成和作战使命任务。最后,对并对其发展趋势进行了展望。     

漫话空军电子战(一) 电子侦察——空军的“战场神目”

<正> 空军电子战是空军利用飞机平台实施的电磁频谱领域内的斗争,主要包括电子侦察、电子攻击和电子防护。 目前世界上空军的电子侦察活动几乎是无所不在、无时不在。虽然美国空军战机上通常都装有自卫的情报侦察与监视(ISR)系统,但作为一场现代化战争,需要在战前、战争期间和战后都要进行有效的ISR,ISR是实施电子攻击和电子防护的基础和前提。美国空军的电子侦察采用电子侦察卫星和专用电子侦察飞机。电子侦察卫星和专用电子侦察飞机是战场的电子神目。电子侦察卫星主要有侦察和照相卫星、成像卫星、情报侦察卫星、监视卫星;空军专用电子侦察飞机主要有U-2高空侦察机,E-3“哨兵”预警、指挥、控制(AWACS)飞机,E-8“联合监视目标攻击雷达系统”飞机和“蒂尔”系列无人机。专用电子侦察飞机主要用于获取战略、战术电磁情报和战斗情报。它包括信号情报(含电子情报、通信情报)、威胁告警(含雷达告警、光电告警)和测向定位(含雷达测向、通信测向和光电测向),用于查明敌人军事电子设备及其相关平台的性能及配置,为指挥员决策提供情报支援。 在阿富汗对塔利班战争中,美国飞机也动用了许多电子     

平流层飞艇载SIAR雷达系统探测能力分析

提出了一种临近空间预警监视系统——平流层飞艇载综合脉冲孔径雷达(SIAR)系统,它采用综合脉冲孔径雷达体制,不仅能够实现对临近空间目标的预警监视,还具备较强的低空探测能力和反隐身能力,论证了平流层飞艇载SIAR系统的探测能力.     

《电讯技术》专题资料《近空间飞行器测控与信息传输技术》题要（三）

基于平流层飞艇的毫米波SAR雷达系统（何均,任培宏）近空间平台雷达系统具有广阔的应用前景,本文针对平流层飞艇这一近空间平台,米波雷分析了毫米波SAR雷达的特点、系统组成、相关指标及关键技术等,初步探讨了毫达在近空间平台应用的可行性。     

平流层信息平台体系结构的研究

文章首先介绍了平流层信息平台的概念及其国际发展动态 ;然后分析了平流层信息平台的需求及其应用前景 ;在此基础上详细研究了平流层信息平台体系结构 ,其中重点论述了平流层信息平台系统模型、航空飞艇系统、推进及位置保持系统、能源系统、跟踪控制系统以及飞行控制系统等关键技术问题。     

机载光电成像平台的目标自主定位

1概述 机载光电成像平台就是挂装在飞机上,用于对地面目标进行实时侦察、跟踪和测量定位的光电成像设备,具有时效性强、机动灵活等特点. 机载光电成像平台从侦察和测量角度分为2类:侦察平台和侦察测量定位平台.     

滑模变结构控制在平流层飞艇姿态控制中的应用

为了较好地控制平流层飞艇的姿态,将滑模变结构控制方法和PID控制方法应用于平流层飞艇的姿态控制设计中,该飞艇模型具有参数静不稳定性。首先,以平流层飞艇平台为研究对象,建立了飞艇的六自由度线性动力学方程。然后,结合滑模变结构控制律和经典控制方法,设计了飞艇姿态控制的滑模控制器和PID控制器。最后,通过数据仿真,得出了较好的姿态控制效果,并对两种控制方法进行了对比分析。仿真结果表明,滑模变结构控制可以作为平流层飞艇平台姿态控制的研究方法,能够较好地控制飞艇的姿态。     

高空通信平台的系统方案探讨

高空平台通信系统可与卫星和地面通信系统互补，是实现宽带无线通信的一种重要手段。本文简要介绍了分别采用飞艇和飞机作为载体的两种高空通信平台，并就高空平台通信系统的载体方案、工作频段和系统结构等方面提出了一些具体的设想。文中建议利用反向C频段开发我国的平流层通信系统，并就高空平台通信与卫星和地面微波通信在C频段的共存问题作了探讨。     

印度情报、监视和侦察装备分析

印度情报、监视和侦察（ISR）装备大体可分为二大块：即弹道导弹防御早期预警系统和预警探测侦察装备体系。它的主要任务是由雷达、光电等主要装备完成对飞机、巡航导弹等大气层内目标以及弹道导弹的探测和测距,由侦察装备实施无线电侦察、声光电侦察以及信息侦察等任务。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.