一种基于LC振荡器的高效隔离式DC-DC开关电源

设计了一种基于片上变压器的隔离式DC-DC开关电源。通过分析影响开关电源能量转换效率的因素,设计了一种应用于隔离式DC-DC开关电源的LC振荡器,提高了隔离式开关电源的整体效率。采用CSMC 0.35 μm BCD工艺进行设计,并将该振荡器应用于隔离式开关电源。隔离式开关电源的输入电压为3.3 V,输出电压为5 V。仿真结果表明,时钟振荡频率为180 MHz,应用该振荡器的DC-DC开关电源最大输出电流达到62 mA,转换效率提高到35.6%。     

应用于升压型DC-DC的新颖软启动电路的设计

提出了一种新颖的软启动电路,实现了输出电压无过冲平滑启动。该电路有效抑制了DC-DC开关电源上电启动过程出现的浪涌电流和输出电压的过冲,同时该软启动电路克服了传统软启动电路无法带载启动的缺点。电路完全集成在芯片内部,避免了使用额外电容而占用过多面积。利用Cadence Spectre仿真平台对电路进行了仿真验证,仿真结果表明,在输入电压为2.4~4.2 V的同步升压DC-DC芯片中,负载在0~2.1 A范围内启动,均未出现电感电流和输出电压的过冲。     

一种低电压恒定跨导轨到轨运算放大器的设计

设计了一种低电压恒定跨导的轨到轨运算放大器,作为误差放大器用在BUCK型DC-DC上实现对输出电压的调节。该运算放大器采用两级结构,输入级采用互补差分对的结构,实现了轨到轨电压的输入,并且利用2倍电流镜技术实现了跨导的恒定;输出级采用AB类放大器的结构,提高了输出电压摆幅和效率,实现了轨到轨电压的输出。该电路基于CSMC 0.25μm EN BCDMOS工艺进行设计,仿真结果表明:电源电压为2.8 V时,在输出端负载电容为160 pF、负载电阻为10 kΩ的情况下,增益为124 dB,单位增益带宽积为5.76 MHz,相位裕度为59.9℃,输入跨导为5.2 mΩ~(-1),共模抑制比为123 dB,输入共模信号范围为0～2.8V,输出电压摆幅为0～2.8 V。     

自适应开启时间Buck变换器定时器电路设计

设计了一种用于自适应开启时间(adaptive on-time,AOT)Buck型DC-DC变换器的定时器电路,采用了输入电压前馈补偿和输出反馈技术,使开关频率不随输入、输出电压变化,实现了固定频率的伪脉冲宽度调制。基于0.18μm BCD工艺进行电路设计,并使用Hspice仿真验证。仿真结果表明当输入电压从5~18 V,相同输出电压下开关频率变化不超过10 k Hz,不同的输出电压下系统开关频率变化不超过20 k Hz。同时,由于定时器中采用输入电压前馈技术,提高了输入线性瞬态响应速度。     

升压式ＤＣ－ＤＣ开关电源的数字化软启动方法研究

为了解决DC-DC开关电源启动过程的浪涌电流较大对开关电源造成损坏的问题,本文提出了一种用于升压式DC-DC开关电源的高效数字化软启动方法。该方法采用可编程数字化技术,通过复用衬底切换电路对输出电容预充电的方式,实现输出电流平稳上升,达到了开关电源的软启动效果,解决了DC-DC开关电源在启动时产生的浪涌电流和电压过冲问题。基于0.18 μmBCD工艺完成了对论文所提出方法的物理实现与测试验证。测试表明在输入电压为3.7V,输出电压为4.6V,占空比为20%~80%时,软启动时间在PVT变化的情况下为210 μs,输出电压平稳上升不会产生浪涌电流现象。通过理论分析与实验验证,该方法具有结构简单、稳定性强、功耗低、启动速度快的明显优势。     

带电压前馈的固定充放电时间锯齿波振荡器

设计了一种用于降压型DC-DC开关电源转换器的锯齿波振荡器。利用电压前馈方法和固定充放电时间方法,实现了锯齿波幅度随电源电压线性变化且频率固定的锯齿波振荡器,抑制了电源电压突变时的输出电压过冲。基于0.18 μm BCD工艺进行设计和仿真。仿真结果表明,该锯齿波振荡器产生的锯齿波频率为2.73 MHz。在2.7~5.5 V电源电压、-55 ℃~125 ℃温度范围内,频率偏移在±6%以内。振荡幅度在0.576~1.470 V范围内随电源电压线性变化。     

一种恒压输出的DC-DC升压电路设计

针对DC-DC升压器存在效率低,纹波电压较大,输出电压不稳定等问题,文中开发和设计了一种具有恒定输出电压的DC-DC升压转换器的方法。通过升压电路和电压反馈技术,将波动的输入电压变成恒定的直流电压输出。该设计通过将转换器的输出电压与参考电压相比较,两者的差值会产生一个PWM信号控制升压器的通断时间,从而达到恒定电压输出。仿真结果显示,该实验电路能在频率为20 kHz的连续导通模式中工作,产生24 V的恒定输出电压,输出功率为100 W。     

基于ATMEGA16的开关电源设计与制作

电源广泛应用于各种电子设备及电子电路中。以ATMEGA16单片机为控制核心,设计并制作了具有输出电压步进可调的开关电源。其硬件由整流、滤波、单片机供电电源、DC-DC变换及LED显示组成。经实验测定,输出电压0～9.9V步进0.1V可调,输出电流1.5A,当输出电压9V、输出电流1.5 A时,电压调整率小于0.67%,效率可达78.78%。     

低输入电压DC-DC升压转换器的启动电路

针对DC-DC升压转换器在低输入电压下无法正常工作的问题,提出了一种基于电容自举原理的低输入电压的启动电路.采用CSMC公司的0.5μm CMOS混合信号工艺库进行电路设计与仿真,考虑到结构复杂的振荡器在较低电源电压下不能理想工作,同时为减小电路功耗,电路采用两种不同简单结构的环形振荡器实现电容自举,并利用反馈控制模块进行合理的逻辑控制.仿真结果表明,0.8 V低输入电压时,通过升压电路转换,可将V_(dd)升高到2.4 V;振荡信号变化时,输出电压变化微小,可以为DC-DC升压转换器提供稳定的电源电压.     

一种快速设计反激开关电源主电路的新方法

提出了一种设计50W以上反激开关电源主电路的实用有效方法--临界条件法,该方法将变压器的设计归结为在最大输入电压(230 V)条件下确定初级侧电感,在最小输入电压(90 V)条件下验证设计参数的正确性,优点是既可简化设计过程,又可避免因传统确定初级电感(最小输入电压和满载条件)需要估计纹波因数所带来的误差.成功地设计了一款90～264 V输入19 V输出的反激开关电源,采用PSIM6.0工具仿真该电源系统,结果显示反激变换器的输出电压纹波最大为±19.35 mV,输出电压精度为±0.10%,实测已实现系统板的结果显示,输出电压纹波较之仿真结果偏小约±3.50 mV.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.