基于差集与遗传算法的同心圆阵稀疏优化方法

同心圆阵天线具有结构简单、波束旋转对称、旁瓣电平低等特点,但是阵列阵元数较多,系统实现的代价大.文中提出了一种非均匀稀疏同心圆阵的设计方法.基于差集的阵列稀疏优化方法具有解析性,运算量小,旁瓣电平低等优点.首先利用循环差集方法获得阵列初始的稀疏优化结构,并进一步将差集产生的解集作为遗传算法的初始值,通过差集与遗传算法相结合进一步优化阵列结构.仿真结果表明:该方法在保持较大稀疏率的同时获得了较理想的旁瓣电平.     

基于量子微粒群的综合孔径圆环阵排列方法

稀疏天线阵列设计是综合孔径微波辐射计的一个重要研究内容。圆环阵因其可实现(u,v)平面基线零冗余、结构简单以及共形、波束旋转对称等特点而备受关注。针对均匀圆环阵UV覆盖不均匀的问题,提出基于量子微粒群优化(QPSO)的综合孔径圆环阵排列方法,以改善圆环阵的UV覆盖。该方法引入量子行为的搜索机制,并设计一种新的圆环阵优化目标函数;与现有方法相比,该方法在提高全局搜索效率的同时,大大降低计算复杂度,且能更好地度量圆环阵UV覆盖的均匀程度。数值仿真结果验证了本文方法的有效性。     

基于特征矢量稀疏重构的欠定DOA估计算法

针对信源数多于阵元数,阵列测向欠定问题,利用最小冗余线阵的阵列扩展能力,以较少的阵元获得较大的阵列孔径,同时将最小冗余线阵与压缩感知理论相结合,提出一种基于特征矢量稀疏重构的欠定DOA估计算法.所提算法能以较少的阵元数估计更多信源的来波方位,具有信源过载能力,同时能降低稀疏重构运算的复杂度,增强了算法的鲁棒性、精确性,性能优于MUSIC算法,实验结果表明该方法是有效的.     

基于几乎差集的多输入多输出雷达阵列稀疏优化方法

针对基于循环差集(Cyclic Difference Sets,CDS)的多输入多输出(Multiple-input Multiple-output,MIMO)雷达阵列稀疏方法由于现有CDS构造条件苛刻、集合数量有限而造成阵列配置数量较少的不足,提出了基于几乎差集(Almost Difference Sets,ADS)的MIMO雷达阵列稀疏优化方法.该方法可解析地确定发射、接收阵元位置,并先验预估虚拟阵列的方向图旁瓣上界.基于ADS的MIMO阵列在旁瓣性能上与基于CDS的阵列相近且优于随机阵列;ADS具有构造简单、阵列配置丰富的优势,有利于该方法的工程应用.仿真验证了所提方法的有效性.     

共享孔径交错阵列综合优化方法

共享孔径稀疏交错布阵作为多功能综合传感器系统的关键技术基础,可以减少天线的数量,节省空间,降低载荷和制造成本。利用差集构造的共享孔径交错阵列,由于阵元的非均匀稀疏分布而导致存在较高的旁瓣电平,提出一种将差集理论和遗传算法相结合对阵列进行优化的方法。首先由差集确定交错阵列的阵元位置,再以激励幅度分布为决策变量,利用遗传算法同步降低各子阵的旁瓣电平,使得共享孔径交错阵列的整体性能得到提升。仿真结果表明,该方法有效抑制了阵列的旁瓣电平,是一种有效的交错阵列优化方法。     

阵元失效条件下的高精度DOA估计方法

为解决波达方向（Direction Of Arrival,DOA）估计方法在阵元失效条件下性能下降甚至失效的问题,本文提出一种基于Toeplitz协方差矩阵重构的DOA估计方法.首先,提出了一种失效阵元检测方法,并根据阵列的鲁棒性将失效阵元分为冗余阵元失效和非冗余阵元失效两种情况.然后,分别针对两种失效场景提出相应DOA估计方法：一是冗余阵元失效,利用阵列冗余度,结合差联合阵列对失效阵元进行填充;二是非冗余阵元失效,利用阵列冗余度进行填充后仍存在空洞,结合矩阵填充理论,用迹范数代替秩范数进行凸松弛以恢复协方差矩阵,进而实现对虚拟阵元空洞的填充,恢复阵列自由度.相对于稀疏类算法,有效消除了模型失配的影响.最后,基于子空间方法进行DOA估计.理论和仿真结果表明,相对于现有方法,本文方法有效避免了阵元失效的影响,提高了估计精度.     

基于互质阵列孔洞分析的稀疏阵列设计方法

针对互质阵列产生连续延迟较少且冗余度高的问题,该文提出了两种基于互质阵列的稀疏设计方法.首先,通过分析阵元位置对互质阵列差分共阵总延迟和连续延迟影响,得出互质阵列在去掉特定阵元后,将不改变连续延迟拓扑.然后,优化传感器阵列布局,在保持整个阵列的阵元数不变的条件下,增加阵列连续延迟数量.其后,分别推得了两种提出阵列设计方...     

互质阵列DOA估计性能综合分析北大核心CSCD

互质阵列是近年来兴起的新型阵列,能显著提高阵列自由度,处理信源数大于阵元数时的波达方向(DOA)估计,且能提高角度分辨率和测角精度。文中根据互质阵物理阵元和虚拟阵元特点,结合多重信号分类(MUSIC)算法提出适用于互质阵基于物理阵列和虚拟阵列的DOA估计方法。该方法以非相干信号源为研究对象,利用互质阵列建立信号接收模型,基于物理阵列的DOA估计方法根据互质阵物理阵元位置特点推导其导向矢量,然后根据导向矢量计算回波信号数据和信号协方差矩阵,最后利用MUSIC算法进行DOA估计。基于虚拟阵列的DOA估计方法根据其虚拟阵元数据特点在向量化协方差矩阵并去冗余后选取连续虚拟阵元接收数据,然后对新协方差矩阵进行一维Toeplitz平滑重构,最后利用MUSIC算法或求根MUSIC算法进行DOA估计。与等阵元数的均匀线阵进行对比,仿真实验验证了互质阵列DOA估计性能的优越性。     

稀布同心圆环阵列的半径优化方法

针对有阵列孔径阵元总数和最小阵元间距约束的稀布同心圆环阵列综合问题, 提出了一种基于修正遗传算法(Modified real Genetic Algorithm, MGA)的半径优化方法.通过约束同一圆环上阵元间距相等, 利用MGA优化圆环的半径, 获得最小的峰值旁瓣电平.该方法不仅降低了优化的计算量和模型的复杂性, 而且还有效地改善了阵列的旁瓣性能.仿真结果证明了该方法的有效性和鲁棒性.     

基于同心圆环的大间距子阵级阵列栅瓣抑制

适当增加单元间距和应用子阵级阵列有利于降低相控阵的设计成本, 但是阵列的稀疏会带来不期望的栅瓣.为解决该问题, 设计了一种无栅瓣阵列:子阵在平面内旋转, 围绕阵列中心呈同心圆环分布.为保证子阵之间不会交叠, 对圆环半径范围进行了分析.利用一种改进的穷举算法, 对每一层圆环上的子阵个数以及圆环半径进行了计算机仿真优化.结果表明, 以4×4子阵共1 024个单元为例, 所提方法可抑制峰值旁瓣电平约-17.48 dB.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.