离子束刻蚀过程中台阶侧壁倾斜现象研究

从标量衍射理论出发,在傅立叶光学的基础上,建立一个数学模型,分析台阶侧壁倾斜对多阶菲涅耳透镜衍射效率的影响。并通过实验,分析影响台阶侧壁倾斜、表面粗糙度和刻蚀速率的因素,确定离子束刻蚀菲涅耳透镜的最佳工艺参数。     

用于空间望远镜的大口径高衍射效率薄膜菲涅尔衍射元件

为满足空间成像领域对大口径、轻量化、高衍射效率光学衍射元件的需求,研究了薄膜衍射元件微结构设计及制作工艺。应用Zemax光学软件设计了320 mm口径,F/#100的四台阶薄膜菲涅尔衍射元件,并利用Matlab软件将连续位相结构转化为离散化台阶分布。研究了薄膜菲涅尔衍射元件的制作技术,选用透明聚酰亚胺薄膜作为基底材料,以石英玻璃作为复制模板,通过多次旋涂的方式实现了厚度为20 m的衍射薄膜制作。应用Solidworks软件设计并加工薄膜支撑装置。测量复制基板及薄膜对应区域的微结构,实验结果表明条纹线宽转移偏差小于1.3%,台阶深度偏差小于8.6%。搭建光路测试在波长632.8 nm处衍射效率平均值为71.5%,达到了理论值的88%。实验结果表明,制作的薄膜重量轻,复制精度高,并且具有高衍射效率,满足空间望远镜的应用要求。     

入射光波波长对菲涅耳透镜衍射效率的影响

使用离子束刻蚀法成功制作高衍射效率 16阶菲涅耳透镜。菲涅耳透镜的衍射效率是评价菲涅耳透镜质量的一个重要指标。对于宽带光学系统 ,除设计、制作误差外 ,入射光波波长对菲涅耳透镜的衍射效率也有影响。针对宽带折衍混合光学系统 ,分析不同入射光波波长对菲涅耳透镜衍射效率的影响。使用四种不同光源 ,对菲涅耳透镜的衍射效率进行测试。指出在短波方向 ,衍射效率下降较多 ;在长波方向 ,衍射效率下降较少     

菲涅耳透镜制作及其在CCD机中的应用

衍射光学元件在国防、生产及科研等领域起着越来越重要的作用。使用薄膜沉积法和离子束刻蚀法制作16阶菲涅耳透镜,应用于折衍混合CCD相机。进行CCD相机光学系统成像质量评价和室外成像实验。该透镜的引入,不仅改善系统成像质量,而且实现了系统的轻量化、小型化,增加了系统设计的自由度。     

菲涅耳透镜制作及其在CCD相机中的应用

衍射光学元件在国防、生产及科研等领域起着越来越重要的作用.使用薄膜沉积法和离子束刻蚀法制作16阶菲涅耳透镜,应用于折衍混合CCD相机.进行CCD相机光学系统成像质量评价和室外成像实验.该透镜的引入,不仅改善系统成像质量,而且实现了系统的轻量化、小型化,增加了系统设计的自由度.     

离子束刻蚀法制作菲涅耳透镜

由于衍射光学元件独特色的色散特性及体积小、重量轻可进行复制等优点,它在国防、生产及科研等领域的作用越来越重要,应用于光学成像系统,不仅能改善系统成像质量,而且能实现系统的轻量化、小型化,增加系统设计的自由度。使用离子束刻蚀法制作的16阶菲涅耳透镜应用于折衍混合CCD相机;测量菲涅耳透镜的衍射效率并分析了影响衍射效率的因素。     

一种设计大数值孔径衍射元件的优化方法

本文以菲涅耳衍射透镜的设计为例，在单位周期内的相位台阶数与最小特征尺寸之间关系的基础上，提出了减小元件边缘单位周期内的台阶数，以增大最小特征尺寸的一种新的设计大数值孔径衍射元件的优化设计方法，并对衍射效率进行了讨论。确定了多台阶衍射透镜优化设计的结构参数。最后给出了设计实例，与深浮雕法和相位匹配法比较，本文法设计的元件仅需套刻3次，而衍射效率的理论值达55.4%，是一种有效的优化方法。     

计算机源生全息菲涅耳透镜及其在微光学互连中的应用

本文简要叙述了菲涅耳源生全息透镜成象的原理，以及制造工艺，并研制了四位相台阶０．４×１０ｍｍ＾２大小的菲涅耳微镜列阵。最后提出了用离轴衍射的菲涅耳透镜实验现自由空间互连的两种方式，并讨论了其在微光学互连中的应用前景。     

用电子束刻划椭圆微型菲涅耳透镜

松下电器中央研究所开发成功用电子束刻划椭圆微型菲涅耳透镜的制作技术，按其象散特性，尝试了将以往由组合透镜构成的象散光学系统薄形化的试验。如获成功，即制成具有菲涅尔透镜的薄膜结构，不仅使透镜系统小型轻量化、可与光探测器和分束器等光学元件集成，并且易于大量复制生产。特别是可将半导体激光的椭圆形输出光斑聚光成规则的圆形。     

色散对液晶菲涅耳透镜衍射效率的影响研究

首先研究了液晶菲涅耳透镜和传统菲涅耳透镜的区别,并给出液晶菲涅耳透镜衍射效率的计算公式。接着,研究了液晶材料的色散和入射波长偏离量化波长对衍射效率的影响。经过计算分析并通过相应的实验发现,当量化波长为470nm时,在400nm和700nm处衍射效率分别下降了9.0%和27.5%,说明波长偏离对液晶菲涅耳透镜的衍射效率影响较大;当量化波长为510nm时,波长偏离在400nm和700nm处产生的衍射效率下降大致相当,约为20.0%;当在400nm和700nm处液晶的折射率变化量Δn基本相等时,液晶色散造成的衍射效率降低都约为8.0%。结果表明,和波长偏离相比,液晶色散对衍射效率的影响相对较小,且液晶菲涅耳透镜的量化波长应在470～510nm区间选取。实验测量了色散对液晶菲聂耳透镜衍射效率的影响,测量结果和理论计算结果非常接近,说明分析结论有效。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.