基于TDC的无死区频率测量技术研究

在精密时频测控领域中,高分辨率、无死区的时间间隔和频率测量非常关键,而时间数字转换器(Timeto Digital Converter,TDC)是时间频率测量的常用手段.该文研制了基于ACAM公司生产的时间数字转换芯片TDC-GP21和Altera公司FPGA芯片EP4CE6E22C8N的时间频率测量设备,实现了高分辨率的时间间隔测量,测量分辨率达到13ps.同时采用时间间隔测量模块两两组合的方式实现了无死区频率测量,创新性地采用每组3个TDC芯片,共4组搭建了时间频率测量系统,并对组内3个TDC芯片测量结果采用平均值滤波法,使频率测量稳定度达到1.1×10-11@5.6×10-15@10000 s,与商用K+K FXE频率计数器指标相当.本设备具有体积小、无需校准、成本低等优点,能够广泛应用到高精度时间间隔和精密频率测量领域中.     

应用于全数字锁相环的时间数字转换器设计

本文将会依据全数字锁相环对时间数字转换器进行设计,其中,全数字锁相环具有粗量化和细量化的不同工作模式。本文旨在提升TDC在细量化工作模式中的测量精度,通过新型的比较器以及解除SR触发器对工作状态的制约关系以达到此目的。最后的仿真结果表明,TDC在粗量化工作模式下能对测量单位能够精确到25纳秒,而细量化工作模式下能够将分辨率降为以皮秒为单位的计量精度。     

定位技术中基于 FPGA 的 TDC 电路设计与实现

分析及对比了各种定位方法和时间间隔的测量方法,针对室内定位系统,采用了到达时间差法（TDOA）来定位。设计了一种基于FPGA 的延时链内插型时间数字转换（TDC）电路,采用Xilinx公司的Spartan‐6系列FPGA实现这一设计。整个T DC系统分为精细时间测量模块、逻辑控制模块、粗计数器模块以及数据显示模块。首先介绍了室内定位技术和TDC的研究现状,然后描述了TDC的系统框架和每个部分的原理与设计,重点讲述了精细时间测量模块的设计,最后给出了仿真结果和TDC系统的实测结果,时间间隔测量精度小于200 ps ,满足室内定位系统的需求。     

TDC‐GP21在时差法超声波流量计中的应用

为了实现高精度的流量测量,设计了一种基于 TDC‐GP21的时差法超声波流量计.系统以 MSP430单片机为核心,选用高精度时间间隔测量芯片 TDC‐GP21,有效的解决了时差法超声波流量计中高精度时差测量的问题.文中详细介绍了时间间隔测量芯片 TDC‐GP21的功能模块及工作流程,设计了一种超声波回波信号处理电路,并对超声波流量计系统硬件电路与软件方案进行了阐述.实验表明,系统的最大测量误差在±1%以内,达到了准确度等级为1级的要求.     

一种用于低功耗TDC系统基于D触发器链的TDC使能电路

时间数字转换器(Time-to-Digital Converter, TDC)是全数字锁相环(All-Digital Phase-Locked Loop, ADPLL)中的一个重要模块,其功耗也是ADPLL系统总功耗的主要部分。针对伪差分反相器链结构的TDC,提出了一种功能不受亚稳态影响的基于D触发器链的TDC使能电路,并对TDC的结构进行改进,以降低TDC系统的功耗。采用SMIC 0.18 μm CMOS工艺对电路进行设计和仿真,仿真结果表明,TDC系统的功耗可以降低74%以上。     

安捷伦Acqiris U1050A时间数字转换仪产品系列增添新成员

安捷伦科技公司日前宣布,其Acqiris U1050A时间数字转换仪（TDC）产品系列增添一新成员。该新款产品具有优异定时分辨率,使TDC成为通信、核研究及武器物理等应用领域中进行精密定时测量及时间间隔分析的最佳选择.     

测试和测量

具有5ps分辨率的时间数据转换仪(TDC) Acqiris U1050A时间数字转换仪(TDC)产品系列增添一新成员。该新款产品具有优异定时分辨率,适用于通信、核研究及武器物理等应用领域中进行精密定时测量及时间间隔分析。该单次(single-hit)TDC时间数字转换仪(U1050A-002)拥有5ps定时分     

时间测量系统(TDC)的原理及实现

车辆与轨道间的作用力是评价车辆运行品质和线路状态的重要因素。研制能够连续精确测量轮轨力的测力轮对装置是非常必要的。由于在对高速动车组轮轨力性能参数的测量中,其温度变化、强电磁场往往会给传统模拟测试系统带来误差。于是,采用了以CMOS技术组成的TDC时间数字测量系统。由TDC的转换原理可知,TDC可在强电磁场下工作,并为数字输出。本文重点讨论了TDC测量原理。不仅如此,也讨论了在工程测量中应变测量的硬件实现和温度偏移、零点偏移的调整。     

一种0.6 V低压两级时间数字转换器

研究了用于超低功耗全数字锁相环(ADPLL)的时间数字转换器(TDC)在近阈值电源电压下的工作原理,提出了一种近阈值电压时间转换器。采用两级量化的TDC,通过时间放大器对量化余量进行放大,实现二次量化。针对TDC低压下的功耗、速度问题,实现了一种增益可扩展的时间放大器,提高了时间分辨率。基于130 nm CMOS工艺的仿真结果表明,两级量化时间数字转换器的分辨率为2.5 ps,动态范围为640 ps,微分非线性(DNL)最大值为0.9 LSB,积分非线性(INL)最大值为2.3 LSB。4倍时间放大器的增益误差为8.2%。     

具有5ps分辨率的时间数据转换仪（TDC）

Acqiris U1050A时间数字转换仪（TDC）产品系列增添一新成员。该新款产品具有优异定时分辨率,适用于通信、核研究及武器物理等应用领域中进行精密定时测量及时间间隔分析。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-