动态环境下的元胞遗传算法研究

为了使遗传算法也能用于非静态优化问题,文中通过标准移动峰函数的测试,分析了动态环境下元胞遗传算法的适应性能和精确性能。同时用实验验证了元胞遗传算法比标准遗传算法具有更好的求解效果。     

噪声环境下遗传算法的性能评价

 为了评价遗传算法在噪声环境下的优化性能,提出"平均最优解"和"最优解分布标准差"两个指标,实验结果表明新指标可以有效地评价噪声环境下遗传算法的优化性能.研究了实数编码遗传算法在噪声强度递增环境下的性能.结果表明小生境策略和多种群策略可以改善遗传算法在噪声环境下的性能,单点交叉在噪声环境下的性能要优于混合交叉.     

一种自适应遗传算法及其应用

遗传算法的性能深受算法参数的影响.为提高算法的搜索性能,避免算法在寻优搜索中陷入局部极值,将一种新的自适应遗传算法用于函数优化中,对三个常用的标准测试函数进行了优化,并将其用于立体图像对的匹配中.通过实验与简单遗传算法进行比较,表明该算法提高了搜索性能.     

自适应遗传算法的改进研究

未成熟收敛问题是导致遗传算法性能下降的重要原因。为了提高算法的性能,对IAGA自适应遗传算法[1]进行了改进,提出了一种新的自适应交叉概率公式和自适应变异概率公式,从而促使算法跳出局部最优解,改善了算法的未成熟收敛问题。仿真结果表明,相对IAGA自适应遗传算法,新算法的全局收敛性更强,性能更优越。     

模糊自适应参数调整的改进遗传算法

为提高遗传算法的优化性能,构建了交叉及变异算子的模糊动态调整器,给出了参数调整过程、模糊逻辑控制器的执行策略及控制过程.采用标准的Benchmark测试函数比较了模糊控制器参数调整的遗传算法和简单遗传算法的性能,结果表明该算法求解精度高,优化效率高及进化代数少.     

遗传算法在VLSI计算机辅助设计中的应用

介绍了遗传算法的基本原理,讨论了遗传算法在VLSI-CAD中的应用,给出了算法性能评价准则,最后对VLSI-CAD的设计作了展望.     

一种改进的基于成熟前收敛判断的自适应遗传算法

针对传统遗传算法存在的缺陷,提出了一种改进的具有成熟前收敛判断的自适应遗传算法。仿真实验表明,同传统的遗传算法和一般的自适应遗传算法相比,改进后的算法性能有了较明显的提高。     

面向海量数据的推荐系统的研究

在处理大数据时,传统的推荐系统,如常规协同过滤的推荐性能受到了限制。使用操作简便的K均值聚类算法与协同过滤构成组合推荐算法具有较好的推荐性能,该文使用遗传算法对组合推荐算法进行优化,简化组合推荐算法,降低组合算法的复杂度和成本。同时,通过对遗传算法进行改进,以提高遗传算法的优化能力,提高推荐系统性能。最后,通过MovieLens电影打分数据集对该文研究的推荐算法进行性能测试。结果表明,遗传算法的优化能力得到提升,推荐系统的性能有所提高。     

基于改进遗传算法的必经点最短路径算法

提出一种解决经过必经点的最短路径的改进遗传算法。在传统遗传算法的基础上,引入Dijkstra算法进行种群初始化;针对传统遗传算法易收敛于局部最优解,迭代次数多,迭代时间长的缺点,提出了改进的交叉算子和变异算子。应用改进遗传算法进行网络节点计算,表明该算法在计算性能上优于传统遗传算法,也验证了改进遗传算法的先进性,有效性。     

改进的遗传算法求解背包问题

为提高遗传算法在解决背包问题时的局部搜索能力,在遗传算法中加入禁忌搜索的思想,用遗传算法做全局搜索,禁忌搜索辅助做局部搜索。文中阐述了遗传算法和禁忌搜索算法的基本思想,并给出了适用于背包问题的模型。通过具体事例测试改进的算法,其结果表明改进后的遗传算法拥有更好的性能和更快的收敛速度。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its