宽带色散补偿光子晶体光纤的优化设计

设计了一种宽带色散补偿光子晶体光纤,此光子晶体光纤在整个C波段具有较大的负色散值,且其色散斜率值均为负值。通过合理选取光子晶体光纤的层数和孔间距,同时优化各层的空气孔直径大小,分别设计了在1 550nm附近的色散值为-425、-440和-400ps.km-1.nm-1;且色散斜率分别为-1.49、-4.31和-8.59ps.km-1.nm-2的宽带色散补偿光子晶体光纤。可以分别实现与G.652和G.655光纤的卡帕值和相对色散斜率相匹配,具有较好的宽带色散补偿能力。     

光子晶体光纤色散补偿特性和非线性系数的研究

利用全矢量等效折射率模型计算了光子晶体光纤结构参数对非线性系数及色散特性的影响,研究发现通过调节结构参数可以灵活设计波长在1.55 μm附近具有高色散值、负色散斜率、低非线性系数的色散补偿型光纤,数值模拟和分析表明光子晶体光纤应用于色散补偿型光纤的研究前景十分可观.     

变孔径色散补偿光子晶体光纤的数值研究

文中利用有限差分法对光子晶体光纤的色散补偿特性进行了数值模拟.在常规光子晶体光纤(PCF)的基础上,变化了第二环的空气孔,增加了光子晶体光纤的结构参量变化的自由度.通过数值模拟,研究了新型光子晶体光纤包层结构参量与其色散之间的关系,并且通过优化得出低至-924.6 ps/nm/km的色散值,这在常规色散补偿光纤(DCF)中是不可能实现的.并且针对常规单模光纤色散特性,设计出合适κ值的色散补偿光子晶体光纤,色散值为-519.3 ps/km/nm,补偿能力远大于常规色散补偿光纤.     

六角芯光子晶体光纤色散补偿特性研究

利用多极法的软件包对六角芯光子晶体光纤的色散补偿进行了数值模拟与分析,研究发现通过改变第一包层空气孔直径dO和空气孔间距A,可以灵活设计波长在1.55μm附近具有高色散值、负色散斜率和在短波长内单模传输的色散补偿型光纤.数值模拟和分析表明该光子晶体光纤在色散补偿型光纤方面具有广泛的应用前景.     

基于光子晶体光纤的宽带色散补偿光纤的设计

采用矢量光束传输法(VBPM)对小纤芯光子晶体光纤(PCF)的色散特性进行了数值分析,研究发现通过调节光子晶体光纤的结构参数可以灵活的对其色散补偿值进行调整,能够实现C L波段(1 530～1 565 nm)的宽带色散补偿功能,并且对标准单模光纤的色散斜率有很好的补偿.在∧=1.0μm,d/∧=0.7时,1 550 nm处的色散值可以达到-339.1 ps/(km×nm),相关色散斜率(RDS)可以达到0.003 2 nm-1,能够有效的对标准单模光纤进行色散斜率补偿.     

新型六角芯光子晶体光纤的色散补偿特性研究

文章利用多极法对新型六角芯光子晶体光纤的色散特性进行了数值模拟与分析,研究发现,通过改变第一包层空气孔直径和空气孔间距,可以灵活地设计波长在1.55μm附近具有高色散值、大的负色散斜率和能在短波长内单模传输的色散补偿型光纤.数值模拟和分析表明,该光子晶体光纤在色散补偿型光纤方面具有广泛的应用前景.     

L波段色散补偿光子晶体光纤的研究和设计

利用多极法对一种新颖结构的双层芯光子晶体先纤的色散特性进行了数值模拟,找出色散随结构变化的规律.通过合理选取其外层芯的层数,同时优化孔间距和空气孔直径,设计出可用于L波段进行宽带色散补偿的光子晶体光纤,此光纤色散值在-310～-260 ps/(km·nm)之间近似线性变化,残余有效色散系数近似为零,相关色散斜率(RDS)在0.003 2 nm-1的色散补偿光纤,其RDS值与标准单模光纤匹配,有效模场面积优于常规色散补偿光纤,可以对宽带传输的标准单模光纤实现良好的色散补偿.     

全固高非线性低色散斜率光子晶体光纤设计

提出了利用掺氟同心圆环的光纤结构来提高光子晶体光纤(PCF)的非线性,所需控制的参量仅有两个。设计了三种具有高非线性、低色散斜率和低限制损耗的全固光子晶体光纤。这三种光纤分别具有正常色散、双零色散点和零色散点恰好在1.55 μm波长处的色散曲线特性。所设计的零色散点恰好在1.55 μm波长处的光子晶体光纤色散斜率值为5.12×10-4 ps/(km·nm2),这比传统的高非线性光纤的色散斜率小了2个数量级。同时,该光纤在1.55 μm波长处的非线性系数为31.5 W-1·km-1,限制损耗为9.62×10-5 dB/km。     

C波段色散补偿光子晶体光纤的研究和设计

设计了一种新颖结构的双层芯色散补偿光子晶体光纤。此光纤在整个C波段具有高负色散特性。通过合理选取双层芯光纤的外层芯层数,同时优化孔间距和空气孔直径,设计的光纤在C波段的色散值在-520ps/(km.nm)和-390ps/(km.nm)之间近似线性变化,残余有效色散系数近似为零,相关色散斜率(RDS)在0.0032nm-1的色散补偿光纤,其RDS值与标准单模光纤匹配,有效模场面积优于常规色散补偿光纤,可以对其长度30倍以上、用于宽带传输的标准单模光纤进行良好的色散和色散斜率补偿。     

大负色散低限制损耗光子晶体光纤的特性研究

设计了一种双层芯双包层结构的大负色散低限制损耗光子晶体光纤,运用多极法对其色散特性和限制损耗进行了数值模拟.主要分析了这种光子晶体光纤的结构参数发生改变时,光纤的色散特性的变化情况,找到了其色散随结构参数变化的规律.最终通过选择适当的结构参数,设计了在1 550 nm波长附近处色散值为-12 000 ps/(km·nm)的大负色散低限制损耗光子晶体光纤.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.