共查询到19条相似文献,搜索用时 125 毫秒
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高芯片偏振消光比铌酸锂多功能集成光学器件 总被引:1,自引:0,他引:1
分析了铌酸锂多功能集成光学器件的偏振消光机理,设计和制作了高芯片偏振消光比的铌酸锂多功能集成光学器件。器件采用切断部分输入直波导后在切断端面选择性镀阻光膜的结构以截断射入衬底的辐射光,与芯片耦合后实现了高于85dB的芯片偏振消光比。制作的器件插入损耗小于3.5dB,分光比为48/52~52/48,半波电压Vπ小于3.5V,尾纤偏振串音小于-33dB;在-55~+85℃全温范围内,损耗变化量小于0.2dB,分光比变化小于1%,尾纤偏振串音小于-27dB,能够满足工程化应用需要。 相似文献
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研制了一种张应变准体InGaAs半导体放大器光开关.该结构具有显著的带填充效应,从而导致在80mA的注入电流下,器件的3dB光带宽大于85nm(1520~1609nm).该带宽几乎同时全部覆盖了C带(1525~1565nm)和L带(1570~1610nm).最为重要的是,在3dB光带范围内,光开关的偏振灵敏度小于0.7dB;光纤到光纤无损工作电流在70~90mA之间;消光比大于50dB.通过降低了载流子寿命,开关速度有所提高.在未来密集波分复用通信系统中,这种宽带偏振不灵敏半导体放大器光开关很有实用前景. 相似文献
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《红外与毫米波学报》2021,(3)
文章提出了一种3-μm中红外波段偏振无关且CMOS兼容的石墨烯调制器,器件主要包括两部分:模式转换结构及石墨烯调制器。该调制器不仅满足于CMOS兼容的要求,而且能够实现基膜的偏振无关调制。仿真结果表明该调制器在2.95μm到3.05μm的中红外波段能够实现高于20 dB的消光比,TE和TM模式的插入损耗都低于1.3 dB,其偏振相关损耗低于1.09 dB。通过计算,当器件长度为420μm,能够获得高达9.47 GHz的3 dB带宽。 相似文献
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K. Wakita I. Kotaka K. Yoshino S. Kondo Y. Noguchi 《Photonics Technology Letters, IEEE》1995,7(12):1418-1420
The improved modulation properties of strain compensated InGaAs-InAlAs multiple quantum well (MQW) electroabsorption modulators and their modules have been demonstrated. Introduction of a 0.5% tensile strain in wells and a 0.5% compression in barriers provides highly efficient operation such as a low driving voltage (V/sub 20/ dB=1.6 V) and a large modulation bandwidth (f/sub 3/ dB>20 GHz). This is in addition to low polarization-dependence with an extinction ratio difference between TE and TM and polarization of less than 1 dB. 相似文献
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Sun Changzheng Xiong Bing Wang Jian Cai Pengfei Tian Jianbo Luo Yi Liu Yu Xie Liang Zhang Jiabao and Zhu Ninghua 《半导体学报》2005,26(4):662-666
A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 1e-12 after transmission through 35km single mode fiber. 相似文献
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Bulk InGaAsP-InP electroabsorption optical modulators with high extinction ratio, low drive voltage, and high modulation bandwidth at λ=1.3 μm are reported. The devices have a tapered-fiber-to-modulator-to-tapered-fiber extinction ratio greater than 20 dB at a drive voltage of <5 V. Very low capacitance modulators (<0.2 pF) were fabricated using SiO2 bonding pad isolation, resulting in a measured electrical modulation bandwidth in excess of 20 GHz 相似文献
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Zhang C.Z. Yi-Jen Chiu Abraham P. Bowers J.E. 《Photonics Technology Letters, IEEE》1999,11(2):191-193
Electroabsorption modulators with traveling-wave electrodes have been designed and fabricated using MOCVD grown InGaAsP-InGaAsP quantum wells. A modulation bandwidth of 25 GHz is achieved for a 2 μm-wide 30 μm-long device. Driving voltage of 1.20 V is achieved for an extinction ratio of 20 dB for operation at 1.55 μm 相似文献
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A GaAs PIN travelling-wave modulator operated at 1.3 ?m has been fabricated from material grown by organometallic vapour phase epitaxy (OMVPE) on an n+ (100) GaAs substrate. The device has a constant V? of 8 V from DC to 10 GHz and an optical extinction ratio of 13 dB. The optical insertion loss of the device is 3.5 dB, and the 3 dB frequency bandwidth is measured to be 4.1 GHz, which is limited by the microwave slowing induced by the n+ substrate. 相似文献
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热光聚合物微环谐振腔滤波器的研究 总被引:5,自引:5,他引:0
设计并制备了一种热光聚合物微环谐振腔滤波器。微谐振环采用跑道型结构,通过光束传播法(BPM)对其弯曲半径进行了设计和优化。采用传统的接触式光刻曝光工艺制备了微环谐振腔滤波器并对其进行了光谱测试,实验结果表明,所设计的器件在1 550nm附近的自由光谱范围(FSR)为112pm,消光比约为12.8dB,3dB带宽约为0.026nm,品质因子Q为5.96×104,调制效率是6.13pm/mW;同时测量了器件的响应时间,得到的响应时间约为1.5ms。 相似文献
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K. Yamada K. Nakamura Y. Ogawa 《Photonics Technology Letters, IEEE》1996,8(8):1021-1023
We propose and demonstrate an electroabsorption modulator using a double-pass configuration that enabled us to overcome the tradeoff between expanding modulation bandwidth and increasing extinction efficiency. The 130-/spl mu/m device, which has a bulk absorption layer, demonstrated a 10 dB extinction ratio with an applied voltage ranging from 0 to -0.9 V and a modulation bandwidth exceeding 20 GHz corresponding to a 200% improvement in the bandwidth-to-drive-voltage over a conventional single-passing modulator. 相似文献
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设计并制备了一种基于热光效应的集成可调谐氮化 硅(Si3N4)波导微环谐振腔滤波器,通过采用马赫-曾德干涉仪(MZI)构成的可调谐 耦合器控制耦合区耦合比,以实现滤波器消光比的调谐。设计并优化了微环谐振 腔的波导截面尺寸、弯曲半径和耦合区波导间隔等参数,并通过光刻、反应离子刻蚀(RIE )等工艺制备 了两种不同弯曲半径的Si3N4波导微环谐振腔。实验结果表明,本文器件在波长1550nm附近处的自由光谱 范围(FSR)为68pm,3dB带宽约为16pm,品质因子Q达到了9.68×10 4,消光比可调范围约为17dB。 相似文献
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M. Kato K. Tada Y. Nakano 《Photonics Technology Letters, IEEE》1996,8(6):785-787
We have fabricated a multiple-quantum-well (MQW) waveguide optical modulator incorporating tensile strain and quantum well with mass-dependent width (QWMDW) for the first time. The structure was built on a strain relief InAlGaAs buffer layer grown on a GaAs substrate. Polarization-independent modulation with more than -10 dB extinction (at 8 V reverse voltage) was achieved over a very wide operating range, from 858 to 886 nm wavelength. 相似文献