ISMA流和MPEG-2 TS流的比较

宽带互联网技术发展带动IPTV应用的发展,传输流格式是IPTV方案中非常关键的因素之一。文章对两种主要流格式ISMA流格式和MPEG-2TS流格式从历史发展、流标准制定的目的、对媒体的处理方法、对业务的支持、系统的升级以及应用等多方面进行了比较分析。     

CATV网络MPEG-2系统目标解码器在DirectShow上的设计与实现

提出了一种用Microsoft DirectShow的图形编辑滤波器来实现CATV网络MPEG-2的系统目标解码器模型的设计方法.通过对STD两种结构:程序流STD和传输流STD的具体分析和仿真,基本解决了STD模型具体实现的不同参数的设置问题.最后对原始流缓冲EB的实时仿真结果也基本符合MPEG-2对STD的设计要求.     

PCAP中MPEG-2TS文件和I帧提取的设计与实现

利用WireShark作为抓包工具,抓取IPTV系统中基于IP网络传输的MPEG-2音视频文件。通过对该PCAP网络数据包的分析与研究,设计并实现了＆PCAP文件中提MPEG-2TS文件的方法,并进一步实现从TS文件中提取基本视频序列流,以及从ES流中提取到I,B和P帧。该实现方法对研究MPEG-2音视频文件在IP网络中的传输机制以及视频跳帧播放有很重要的参考价值。     

基于DirectShow的MPEG-2流媒体多路播放与实时存储系统设计与实现

DirectShow是基于COM的多媒体应用开发技术。介绍了DirectShow系统的体系结构,重点讨论了本系统中源Filter和解复用Filter的设计方案,以及不同MPEG-2传送流之间动态切换播放的关键技术,设计并实现了网络MPEG-2流媒体的多路播放系统,以及VOB格式的实时数据存储模式。     

浅议MPEG-7标准及其应用

本文主要从MPEG-7标准与MPEG-1、MPEG-2、MPEG-4标准的关系、MPEG-7标准的目标、MPEG-7 标准的构成要素等方面,分析与概述了MPEG-7标准的技术内容,并从MPEG-7标准的Pull类应用和Push类应用两方面介绍了MPEG-7标准的应用情况。     

浅议HPEG-7标准及其应用

本文主要从MPEG-7标准与MPEG-1、MPEG-2、MPEG-4标准的关系、MPEG-7标准的目标、MPEG-标准的构成要素等方面，分析与概述了MPEG-7标准的技术内容，并AKMPEG-7标准的Pull类应用和Push类应用两方面介绍了MPEG-7标准的应用情况。     

云平台上AVS视频转码系统的设计与实现

随着网络与宽带技术的飞速发展,数字视频呈现出海量化与多样化的特征.AVS作为我国自主音视频标准,编码效率优于同期国际标准,在保证图像质量的同时,便于视频数据的存储与传输.为了将数字视频进行高效的AVS转码,提出并实现了一种云平台上的AVS转码系统,该系统采用音视频分离方法将其他格式视频文件快速转码成AVS格式,并避免了转码文件中音视频内容间不同步问题,实验结果证明了方案的有效性.     

数字电视系统中的时间恢复和音视频同步

音视频同步是数字电视系统中实现实时解码的难点.讨论MPEG-2传输码流中的时间信息在音视频同步中的作用,详细介绍两种MPEG-2系统时序时钟的恢复方法--锁相环同步和异步置数法,给出处理音视频同步的实际方法,采用跳帧或者重复帧的纠正措施.其算法及几个主要电路设计适用于各种MPEG-2解码器.     

浅议MPEG-7标准及其应用

本文主要从MPEG-7标准的目标,MPEG-标准的构成要素等方面,分析与概述了MPEG-7标准的技术内容,并从MPEG-7标准的Pull类应用和Push类应用两方面介绍了MPEG-7标准的应用情况。     

数字电视中DSP技术的应用

本文根据MPEG-2音视频传输流的特点,提出了使用高速通用DSP实现数字电视的应用方案.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.