探测器本身的辐射对实时测温系统测温精度的影响及其抑制

在介绍一种采用钽酸锂热释电探测器实现的实时测温系统的基础上，着重讨论了探测器系统本身的辐射对该系统测温精度的影响．提出了抑制探测器系统本身的辐射对该系统测温精度影响的三条措施：一是对探测器进行水冷；二是采用一带宽为150nm的窄带干涉滤光片；三是进行电气补偿并进行了一些必要的分析与讨论．同时实验也表明，在采取上述抗干扰措施后，在要求的测温范围400℃～1200℃内，测温精度符合设计要求．     

光源对测温系统测温精度及测温范围的影响

基于Kirchhoff定律，依照测温系统的激光光源的能量、波长、探测器的灵敏元面积和光学系统的相对孔径与温度分辨力、测温精度及测温范围之间的关系，对采用LiTaO3热释电探测器作光电转换器件的实用化实时测温系统的激光光源进行了优化选择。结果表明，在测温范围400-1200℃内，采用所选择的半导体激光器(LD)作为该实时测温系统的激光光源，其温度分辨力不低于0．4K，测温精度不低于0．3％。     

影响实用化实时测温系统测温精度的几个因素

基于Kirchhoff定律，利用半导体激光器及钽酸锂热释电探测器设计了一种实用化的实时测温系统，从待测目标表面的红外辐射特性、待测表面周围的其它辐射体、大气的透射特性以及测温系统本身这四个方面出发，对影响该系统测温精度的因素进行了详尽分析，并提出了提高测温精度的相应措施．实验结果表明，在测温范围673～1473K内，温度测量的不确定度在0．3％以内，符合设计要求。     

燃烧合成高压釜测温测压虚拟仪器

温度和压力是化学反应过程中两个重要的参数。在高压釜的测温测压系统中,本文给出了实现热电偶冷端补偿电路和压力采集电路的解决方案,以虚拟仪器LabVIEW6．1为软件平台,实现了多路温度和压力测量集成,开发出了高精度、高效率、实时可视的测温测压程序。     

多路热电阻测温电路

文章分析了一类典型的多路热电阻测温电路，借助于数字万用表测电阻的比较法原理，引入一种常用芯片７１７０与ＣＰＵ的多路测温接口电路     

一种实用化实时测温系统激光光源的最佳选择

基于Kirchhoff定律和测温系统的各主要技术参数(激光光源的能量、波长、探测器的灵敏元面积及光学系统的相对孔径等)与各主要技术指标(温度分辨力、温度灵敏度、相对温度灵敏度及测温精度)之间的关系．对利用激光并采用钽酸锂热释电探测器作光电转换器件的实用化实时测温系统的激光光源进行了优化选择．实验表明，在测温范围400℃-1200℃内，采用所选择的激光器作为该实时测温系统的激光光源，其测温精度均符合设计要求。     

再做一个Arduino简易扩展板——多路测温

使用DSl8820测温已经是老生常谈，这个使用单线总线的测温电路外表和接线极其简单。可是要在单片机上使用也少不了编程，而且它是利用脉冲宽度来判别0和1，对时序有严格要求。如果设置不当．就不能成功测温。但是在Arduino上使用，借助扩展类库Onewire，使用几个公有成员函数，就可以很容易地做成多路测温装置。这次做的扩展板可以接入3个测温元件。同时利用定时器timer2实现计时功能，完成后的外观见题图。     

一种双波长光纤测温系统波长带宽的优化设计

基于Kirchhoff定律，利用钽酸锂热释电探测器设计了一种实用化的双波长、高精度光纤测温系统。简要介绍了该仪器的基本结构及其工作原理．并依照单个探测器的温度分辨率、测温系统中R(T)-T曲线的线性度与温度灵敏度，以及系统的测温误差随波长带宽的变化，在考虑单个探测器的最小响应度和温度分辨率的基础上．对系统工作波长的带宽进行了优化设计。得出了在测温范围400—1300℃内，当系统的工作波长为λ1=2.1μm，λ2=2.3μm时，其工作波长的带宽取20nm较为合适的结论。     

一种线性化有源电桥在测温中的应用

介绍了用热电阻作感温元件，设计一种有源线性化测量桥路，分析了此测量桥路的测温优点，并给出了实用的测温现象连接方式。     

多路铂电阻测温系统数据误差修正方法

文中叙述了多路铂电阻测温系统的组成。着重分析了铂电阻测温系统的误差来源及软 件修正方法,并对此修正效果做了验证试验。用此方法修正后,误差及测量数据的不一致性得到改 善,精度大大提高。该修正方法具有较强的通用性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.