基于独立分量分析的图像去噪研究

独立分量分析(independent component analysis,ICA)是基于信号高阶统计量的信号分析方法,它可以找到隐含在数据中的独立分量。在分析独立分量分析的基本模型及方法的基础上,讨论了有噪声信号的独立分量分析,使用最大似然估计对有噪声的ICA模型进行去噪处理,并研究了基于ICA的软门限图像去噪方法。在仿真实验中与其他的图像去噪方法进行了比较,突出了该方法在噪声方差较小时对非高斯信号的去噪优势。     

基于独立分量分析新算法的含噪图像盲分离

由于乘性噪声的存在,严重限制了标准ICA的使用。在分析独立分量分析的基本模型的基础上,讨论了有噪信号的独立分量分析(Noisy ICA)。提出一种新的基于四阶统计量的方法来消除乘性噪声,分离出独立的源信号。通过寻求噪声线性转换的统计结构,依据代价函数最小来获取解混阵B,从而分离出多维观测信号。最后把算法应用于含噪的混合图像,通过仿真显示算法很好的分离了源信号。     

基于ICA的谐波恢复方法

加性有色高斯或非高斯噪声中谐波恢复是信号处理中的一个常见问题,本文利用独立成分分析(ICA)来研究加性噪声中实谐波信号的恢复问题.首先建立了谐波信号的ICA数学模型,分析了谐波恢复可以由ICA方法实现的数学原理,然后提出了噪声中谐波恢复的ICA方法,最后通过仿真实验说明了基于ICA的谐波恢复算法的有效性.     

空时分组码通信中的一类ICA盲检测方案

空时分组码（STBC）通过使用发射分集策略和空时编码方案可以明显改善系统性能。然而，其接收端必须获得准确的信道状态信息（CSI）才能进行有效的信号检测。而对于复杂的无线通信环境，这种前提条件有时却难以得到满足。独立分量分析（ICA）是一种将一个复杂的数据集合分解为多个独立子集的盲源分离（BSS）技术。通常情况下，即使没有空间信道的任何信息，ICA也可以仅凭接收信号恢复出发射信号。提出了一种利用ICA技术的STBC盲信号检测方案，在建立了适用于ICA的特定通信系统模型后，几种典型的ICA算法被用来进行性能比较。理论分析表明，ICA盲接收技术的应用可以在一定程度上替代基于信道估计的传统方法，增强系统对信道估计错误的顽健性。仿真实验结合了具体的STBC系统，比较了基于ICA的不同方案的性能，并讨论了最优的信号检测方案。     

基于独立分量分析的混沌信号盲分离

现有的混合混沌信号分离方法一般都要利用各个混沌信号的内在性质以及一定的约束。利用混合混沌信号中各源信号的独立性，依据基本ICA估计原理中的极大非高斯性原理，采用基于峭度的不动点分离法对此类混合信号进行分离，实现了此类信号的盲分离。对多种此类混合信号进行分离仿真的结果表明，该方法可以快速有效地分离出混合混沌信号中的各个源信号。     

基于ICA的无线电通信干扰抑制

抑制无线电通信信号中的干扰是提高通信可靠性的有效措施.传统的干扰抑制技术存在算法、设备复杂,对信号有损伤和实时性差等问题.针对存在的问题,在分析研究盲源分离(BSS)的理论基础上建立了基于最大信噪比算法的ICA通信干扰抑制模型;基于该模型仿真实现了无线电通信信号的分离提取和多路干扰信号的抑制.仿真结果表明,基于ICA的...     

ICA及其在阵列信号处理中的应用研究

独立成分分析（Independent Component Analysis,ICA）是一种有效的盲信号分离（Blind Source Separation,BSS）方法。当目标源信号相互独立时,它能从多通道的混合观测信号中将目标源信号分解开来。本文通过对ICA的详细介绍,对比了ICA模型和阵列信号处理模型的特点,分析了二者的关系,并就二者的综合应用进行了研究,同时对盲波束形成、雷达信号分选和外辐射源雷达信号分离等典型应用进行了介绍和评价。     

基于独立分量分析的多天线空时盲接收方案

将独立分量分析(ICA)技术应用于无线通信环境中,通过分析空时分组码(STBC)和垂直-贝尔实验室分层空时(V-BLAST)的本质结构,建立了多种适用于ICA的特定通信系统模型,并以此实现了对发射信号的盲检测,从而代替了基于信道估计的传统接收方法.理论分析表明,ICA盲接收技术的应用可以有效提高系统对信道估计错误的顽健性和系统设计的灵活性.仿真结果验证了所提方案的有效性,并对算法实现的复杂度和收敛特性进行了分析.     

用ICA方法消除无线通信与雷达信号中的多频混合噪声

把ICA技术用于无线通信／雷达信号中消除多频混合噪声。分析了无线通信／雷达回波信号的特点,建立了期望信号和联合噪声信号混合模型和独立分量分析（ICA）模型,讨论了独立观测器的构成方法。用改进了的FastICA算法对此进行了仿真。结果表明,应用这种分离混合信号方法取得了良好的效果,可以获得几乎纯净的源信号,且放宽了各路信号的幅度比范围和信号类型的范围。该方法适用性强,抗干扰功能和性能佳,可以推广到其他相关信号处理中。     

基于相关性测度的雷达分选算法

雷达信号分选利用信号特征参数的相关性来实现不同雷达信号的分离。在实际雷达信号分选的处理过程中,由于信号参数的无规律性以及先验知识的缺乏,采用独立分量分析(In-dependent Component Analysis, ICA)的方法对雷达信号进行处理。针对 ICA 算法分离非平稳信号性能下降的问题,提出一种相关性测度变步长 ICA 算法,将其应用于雷达信号分选中。计算机仿真表明,这种算法不仅减少了信号的分选达到收敛的迭代次数,而且可以有效地提高信号分选的稳态性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.