2.5-10Gb/s光发射机驱动电路HEMT IC中器件模型参数

对高速调制器驱动电路HEMTIC中器件参数进行了研究,着重讨论了HEMT器件直流参数、交流参数对外调制驱动电路特性的影响,给出了满足电路性能要求的器件参数范围;对2.5-10Gb/sPHEMTIC光驱动电路进行了计算机仿真,眼图模拟结果表明满足2.5-10Gb/s高速光纤通信系统需要.     

一种定制总线接口线驱动器电路的分析与研究

利用解析方法及CAD技术对一种定制总线接口线驱动器电路进行了分析,包括直流分析、交流分析、频率响应、瞬态稳态分析、精度和温度特性等模拟;还进行了电路可靠性预计;讨论了电路的功能,并对电路结构、性能、特点以及设计思想,提出了一些认识和看法。     

基于PSpice的电路特性分析和器件性能研究

为了实现计算机对电路的特性进行分析,利用PSpice对RLC电路的交流分析、频率响应以及谐振频率进行模拟,模拟结果和理论值相吻合,PSpice仿真能得到与实际器件操作相同的效果。为了对电路元件的性能进行评估,利用PSpice进行了蒙特卡罗高级分析,分析结果表明：RLC电路器件的合格率和批量元件频率的偏差相关联,并与其容差相联系,PSpice是研究器件性能的有效工具。     

2.5—10Gb/s光发射机驱动电路HEMT IC中器件模型参数

对高速调制器驱动电路 HEMT IC中器件参数进行了研究 ,着重讨论了 HEMT器件直流参数、交流参数对外调制驱动电路特性的影响 ,给出了满足电路性能要求的器件参数范围 ;对 2 .5— 10 Gb/ s PHEMT IC光驱动电路进行了计算机仿真 ,眼图模拟结果表明满足 2 .5— 10 Gb/ s高速光纤通信系统需要     

基于Protel 99 se的负反馈放大电路分析

对开环和闭环放大电路进行分析,利用Protel 99 se仿真软件对电路的静态工作点、瞬态特性、交流小信号进行了分析。通过分析,说明了负反馈电路可以提高电路稳定性,减少非线性失真,拓展通频带。Protel 99 se提供了高级模拟数字器件混合仿真功能,可以仿真由各种器件（例如TTL,CMOS,BJT等）构成的电路。     

APD前置放大模块电路建模与仿真分析

采用SACM—APD电路模型以及对前置放大电路的分析，建立了APD前置放大模块电路模型，并对模型进行瞬态特性和交流特性仿真分析。模拟得到响应度约为400kV／W；信号沿上升下降时间为6ns，-3dB带宽约为73MHz，与研制的APD前置放大模块实际试验测试值相吻合。     

模拟电路关键环节OP放大器(上)

Transistor电路的困难点 直流与交流工作必须分开考虑 图1是典型的模拟电路,外观看似简易的Transistor交流放大电路,然而实际上为了解该电路的工作特性,因此必须将决定工作点视为直流工作,该工作点又称为直流偏压(bias).如图1所示,由于collector信号中点(平均值)的直流电流,与无信号时的collector电压相等,所以决定工作点时必须利用图2所示的直流动作电路作检证.     

Multisim7在模拟电路实验教学改革中的应用

Multisim 7是一种功能非常强大的电路仿真软件,运用该软件的仿真功能,可以实现模拟电路的分析和设计。为了能够全面地描述Multisim 7仿真软件,通过具体的实例进行阐述,并利用直流分析和交流分析的方法,分析该电路的静态工作点、幅频特性、电压特性、电流特性等特征参量。通过这些分析结果,证明该仿真软件对于模拟电路实验的教学改革可以起到非常积极的作用。与以往处理此类问题不同,这里采用理论和实践相结合的方法。     

适用于模拟集成电路的符号模拟程序

本文介绍了一种符号模拟程序——ISAAC(模拟集成电路的交互式符号分析法)。该程序以符号表示电路参数,可得到任何模拟集成电路(固定电容和开关电容,CMOS、JFET和双极电路)的所有交流特性。它对传输函数、CMPR、PSRR、阻抗、噪声等参数提供了解析表达式。该模拟程序具有两个新颖的特点:第一,能用基于参数量值的试探性判据来简化表达式,这样可得到仅含主要项的易理解的表达式。第二,失配项的显表达式容许对二次效应,比如PSRR,的精确计算。 符号模拟程序ISAAC与数字模拟程序相比较,能为模拟设计者提供直观的电路特性,而且还是教学的有效工具或模拟设计者的辅助工具。此外,该模拟程序产生完整的电路交流分析模型,可用来对非固定拓扑结构模拟模数生成器进行自校正。该程序的功能以下面几个例子说明。程序的效率由一种专用稀疏距阵算法确定。     

文氏桥式振荡电路特性及数值仿真分析

正弦波振荡电路是模拟电路课程的基本教学内容,几乎所有的教材都采用反馈的概念来分析正弦振荡电路的特性.本文通过列写文氏桥式振荡电路的电路方程,分析了该电路的振荡特性,并采用数值仿真的方法模拟起振条件,得到了与现有教材对该电路分析一致的结果.上述分析结果可供讲授电路理论及模拟电路课程的教师参考.     

特高压交流电力线路仿真模型的创建

特高压电力线路运行特性不同于一般高压电力线路,进行特高压交流电力线路特性研究需要创建电力线路仿真模型。文章以均匀传输线理论为基础,对特高压电力线路4个参数进行分析,得出特高压交流电力线路单位长度电导G0表达式,推导得出特高压交流电力线路考虑分布参数特性的数学模型,并在Matlab仿真软件平台创建仿真模型,为特高压长距离电力线路运行特性研究奠定基础。     

交流电机高性能转矩控制教学内容设计

交流电机高性能转矩控制是交流调速课程讲授的核心,也是学生学习的难点。本文从交流电机产生转矩的物理本质出发,结合转矩和磁链解耦控制特征,全面阐述了交流电机中高性能转矩控制数学模型;基于这些模型分析了当前两种典型的交流电动机高性能转矩控制系统结构,最后给出实验结果。课堂教学结果显示,本文提出的教学内容设计能够使得学生迅速抓住交流电机高性能转矩控制本质,取得了很好的教学效果。     

A soft-switched, high-frequency resonant rectifier andcharacteristics of the controlled system

In this paper, a high frequency and soft-switched AC/DC rectifier employing a series-type resonant circuit is proposed to obtain the sinusoidal AC line current. Using the proposed rectifier, the high power factor and low harmonic currents are obtained in the AC line. Furthermore, several advantages such as the high power density and wide output voltage range can also be available. To regulate the output voltage of the proposed circuit, the digital proportional-integral (PI) controller is used whose sampling time corresponds to the zero-crossing point of the AC line voltage. Including this controller, the model for the closed-loop system is developed in order to examine the stability and dynamic characteristics. With this model, the gain of the PI-controller is determined by the pole assignment technique and the closed-loop dynamics is investigated by the root locus plots. A good agreement is made between the simulated and experimental results     

交流电能表检定装置测量结果的不确定度评定

交流电能表检定装置是检定交流电能表的必备设备,广泛应用于电力公司、电能表生产企业。加强对电力公司等企业所属交流电能表检定装置的计量检定,对于打破行业垄断、维护消费者权益意义重大。针对此从检定交流电能表检定装置的数学模型、不确定度来源等方面对其不确定度进行分析探讨。     

采用电流矢量控制的电流型PWMAC/DC变换器非线性控制策略的研究

文章提出了一种采用电流矢量PWM控制的非线性控制策略，该方案通过电流矢量PWM控制来跟踪电流指令，从而简化了电流型PWM AC／DC变换器波形发生。在建立电流型PWM AC／DC变换器d-q模型基础上，采用输入输出线性化方法实现了解耦控制，给出了理论分析和调节器参数整定算法，并利用Mallab对控制策略进行了仿真，获得了预期效果。     

An electromigration failure model for interconnects under pulsedand bidirectional current stressing

An electromigration failure model which can be used to project the electromigration lifetime under pulsed DC and AC current stressing has been reported. The experimental results indicate that different metallization systems (Al-2%Si, Al4%Cu/TiW, and Cu) show similar failure behaviors, which can be explained and predicted by this model. The pulsed DC lifetime is found to be longer than DC lifetime, and the AC lifetime is found to be very much longer. This recognition can provide significant relief to circuit designs involving metals carrying pulsed DC and AC currents, and allow a more aggressive design to improve circuit density and speed     

Simulated study on the InP/InGaAs DHBT under proton irradiation

A 3D model simulation of InP/InGaAs/InP DHBT is reported in this paper. A comprehensive set of built-in physical models are described, including Stratton''s hydrodynamic model, high-fields mobility model and thermionic emission model. A mixed-mode environment is required for AC simulation instead of simulating an isolated HBT, in which the HBT is embedded in an external circuit, and the circuit voltage and current equations are solved along with the Poisson equation and transport equations. In AC simulation, simulator Sentaurus provides the computation of the small signal admittance Y matrix. From the results of Y matrix, the small signal equivalent circuit is constructed with the conductance and capacitance obtained from Y matrix, and the AC parameters, such as S-parameters, will be calculated. The small signal AC characteristics of InP/InGaAs DHBTs under proton irradiation are simulated with different fluences of proton irradiation. Simulation results show that the maximum oscillation frequency will be degraded when fluence of proton irradiation is increased.     

AC versus DC hot-carrier degradation in n-channel MOSFETs

The origins of the enhanced AC hot-carrier stress damage are examined. The enhancement in hot-carrier stress damage under AC stress conditions observed with respect to damage under DC stress conditions can fully be explained by the presence of three damage mechanisms occurring during both DC and AC operation: interface states created at low and mid-gate voltages, oxide electron traps created under conditions of hole injection into the oxide, and oxide electron traps created under conditions of hot-electron injection. It is shown that the quasi-static contributions of these mechanisms fully account for hot-carrier degradation under AC stress. The AC stress model is applied to devices from several different technologies and to several different AC stress waveforms. Excellent agreement is obtained in each case. The results demonstrate the validity of the model for frequencies up to 1 MHz. The absence of any transient effect indicates that the model could be applicable at much higher frequencies     

基于Matlab/Simulink的交流异步电机矢量控制系统

着眼于讨论交流异步电机的矢量控制方法,在了解以及分析了交流异步电机的数学模型和调频控制原理的基础上,设计了一种电机的矢量控制方法以及建立模型并进行仿真。利用Matlab/Simulink的强大建模仿真功能,设计了各个功能模块,如：ACR模块、ASR模块,PI调节模块、坐标转换模块、磁通计算模块等。并且整合这些独立的模块成为一个矢量控制调速系统。仿真实验结果证明了该模型设计的合理性有效性。实验图表数据表明该建模方法能达到准确控制调速系统的要求。     

THEORETICAL ANALYSIS ON THE TRANSIENT PROCESS OF AC SILENT DISCHARGE

A mathematical model for analysing transient process of AC silent discharge isestablished from its physical model.Then,the breakdown characteristics and the dependence ofdischarge current density on time are calculated theoretically in this kind of AC silent discharge.They are compared with the experimental results and the deviation between the theoretical andexperimental results are discussed briefly.