新型单相双Buck光伏逆变器

为了提高光伏并网逆变器的效率,本文以无变压器式的光伏并网逆变器为研究对象,研究其产生漏电流的原因,改进逆变器原有的拓扑结构,提出了新型的单相双Buck逆变器,该逆变器是一种改进型的三电平逆变器,适合中高压大功率场合,具有减少了输出电压的谐波等特点。本文对于逆变器控制策略,提出了电压电流的双闭环控制策略,最后设置具体参数,进行波形仿真,验证控制策略的正确性。     

Z源型光伏并网逆变器研究

介绍并分析Z源型光伏并网逆变器的拓扑结构及其工作原理。基于并网逆变器Z源阻抗网络的特殊性质,为改善输出波形质量,减少并网电流谐波,系统省略传统逆变桥臂的死区设定,通过控制逆变桥臂的直通矢量占空比实现光伏阵列输出电压的升压功能。利用Matlab对逆变器控制系统运行控制模式进行仿真,仿真结果证明理论分析的正确性和有效性。     

一种新型NPC非隔离光伏并网逆变器

三电平MPC非隔离并网逆变器具有开关损耗小、共模特性好、输出失真小等优点,提出了一种高可靠性的三电平半桥MPC逆变器,该拓扑只需要4个开关管和两个二极管就具有恒定的共模电压。更重要的是,与传统的半桥NPC逆变器相比,本文提出的拓扑结构可以在不增加死区时间的情况下避免桥臂直通问题。此外,与大多数NPC半桥逆变器和双Buck型半桥NPC逆变器相比,该拓扑具有更低的导通损耗,分析了该拓扑结构的共模模型和工作原理,证明了其优越性。最后,搭建仿真模型和实验平台验证了理论结果。     

基于LLC隔离的光伏并网逆变器研究

传统光伏并网逆变器使用工频变压器进行隔离,体积大、笨重、成本高、效率低。提出了一种利用半桥LLC串联谐振电路进行隔离的光伏并网逆变器方案,分析了两级式光伏并网逆变器各级结构、组成、工作原理把采用变压器隔离和半桥LLC串联谐振电路隔离的光伏并网逆变器进行对比可知,采用LLC谐振电路进行隔离比变压器效率高、重量轻、体积小。     

分布式供电网络中新型光伏并网逆变器研究

并网逆变器在以光伏发电为电力来源的分布式供电系统中起到关键的连接作用,其可将光伏阵列所发电能逆变为与电力网络电压频率相同、相位一致的电压与电流保证光伏发电系统和电力网络正常运行。但传统并网逆变器存在共模漏电流严重,中点电位二次脉动以及转换电压二次谐波含量较多的问题。为改善并网逆变器的逆变性能,设计一种新型无隔离变压器结构的单相逆变器。分析新型并网逆变器直流变换电路模块和直流交流变换电路模块的工作机理,并将其与传统并网逆变器对光伏阵列所产生的电平处理效果进行仿真比较,结果表明,新型逆变器输出逆变电压二次谐波含量较传统逆变器降低54.87%,具有较好的逆变功能。     

多电平并网逆变器H桥功率跟踪及功率匹配控制

H桥级联多电平逆变器可实现光伏电池单级式并网,但是由于该系统只在各H桥单元存在一次能量变换,除了要考虑常规逆变器控制及并网控制外,还需要同时考虑到各H桥单元所接光伏电池最大功率点跟踪(MPPT)及H桥传输功率匹配的问题。对此提出对每个H桥单元加入一个MPPT控制器的控制方法,使得各H桥所接光伏电池均能工作在各自的最大功率点,能有效提高各H桥单元光照不均衡条件下MPPT跟踪的准确性和稳定性,同时基于各H桥单元最大功率跟踪过程中的电压误差,对各H桥的SPWM调制波幅值进行比例调节,从而实现各H桥传输功率与光伏电池最大输出功率相匹配。最后在Matlab/Simulink仿真平台上进行了系统的仿真实验,结果表明以七电平级联光伏并网逆变器为例证实了该系统的可行性和可靠性。     

T型三电平逆变器的数学模型和控制策略分析

T型三电平光伏并网逆变器作为一种新兴的中点钳位型(NPC)三电平逆变器,相比较传统NPC三电平逆变器具有开关器件少,功率损耗均匀,运行效率高等优点,被广泛应用于光伏产业。为了满足光伏电站功率的不断提高,T型三电平逆变器正成为新的研究热点。文章建立了T型三电平逆变器的数学模型,通过dq变换对交流控制进行了解耦,采用了电压环加电流环的双闭环控制,通过SVPWM调制实现了对IGBT的控制驱动,并搭建175k W试验样机验证了其可行性。     

单相光伏并网逆变器无差拍控制的研究与仿真

光伏并网逆变器是光伏发电系统的主要部件,为了达到更好的效率输出更高质量的电能,对逆变器电流进行快速有效的控制尤为关键。该文简单介绍了当前光伏并网逆变器的几种常用控制方法及其基本思想,分析了并网逆变器的工作原理和无差拍控制方法的原理,给出了逆变器脉冲宽度的计算和参考电流的获取方法,通过MATLAB/Simulink软件仿真表明,无差拍控制在单相光伏并网逆变器控制中动态响应特性好,控制方便,电流跟踪电网电压波形好。     

一种基于变压器的新型九电平逆变器

在光伏并网逆变器领域,传统拓扑结构常采用先升压再逆变的结构,造成效率进一步提升受到限制且输出电压电平数较少。对此,本文提出了一种基于变压器的新型单相九电平逆变器。首先,本文详细地分析了所提逆变器的拓扑结构,并给出了各开关管在正、负半周期内的开关状态,为了突出所提拓扑的优势,本文将之与其它类似的九电平逆变器进行对比。同时,为使所提逆变器性能最优,本文将电平合成脉宽调制（LSPWM）技术应用至该逆变器。此外,本文还给出了具体的级联方案,使得所提拓扑可以通过级联的方式来提高逆变器的输出电压,亦或是增加输出电压电平的数量。最后,搭建样机并进行了实验,实验结果充分证明了理论分析的正确性以及该方案的可行性。     

连铸坯视觉定重线结构光平面调整方法研究

鉴于传统三电平逆变电路存在谐波含量高的缺点, 在分析模块化多电平换流器(MMC)工作原理的基础上, 提出使用模块化多电平电路实现光伏并网逆变功能, 采用微分-跟踪器法实现光伏阵列最大功率点跟踪(MPPT)及逆变器PQ解耦控制, 实现了光伏系统以单位功率因数并网。在PSCAD中建立光伏并网系统动态仿真模型, 仿真结果表明, 所建模型具有开关损耗低、谐波量小的优点, 验证了所提方法的正确性和可行性。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-