共查询到18条相似文献,搜索用时 140 毫秒
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硅片背面减薄技术研究 总被引:1,自引:1,他引:0
硅片背面磨削减薄工艺中,机械磨削使硅片背面产生损伤,导致表面粗糙,且发生翘曲变形.分别采用粗磨、精磨、精磨后抛光和精磨后湿法腐蚀等四种不同背面减薄方法对15.24cm(6英寸)硅片进行了背面减薄,采用扫描电子显微镜对减薄后的硅片表面和截面形貌进行了表征,用原子力显微镜测试了硅片表面的粗糙度,用翘曲度测试仪测试了硅片的翘曲度.结果表明,经过粗磨与精磨后的硅片存在机械损伤,表面粗糙且翘曲度大,粗糙度分别为0.15和0.016 μm,翘曲度分别为147和109 μm;经过抛光和湿法腐蚀后的样品无表面损伤,粗糙度均小于0.01 μm,硅片翘曲度低于60 μm. 相似文献
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确定了用于定量俄歇电子能谱测定所需的反灵敏度因数α_i。便于对目前锑化铟器件工艺中采用各种腐蚀和清洗方法处理后的锑化铟(111)面进行半定量俄歇分析。通过化学腐蚀清洗后表面氧化物的氩离子腐蚀时间与已知厚度的阳极氧化物氩离子腐蚀时间的对比,估算出化学腐蚀清洗后表面氧化层的厚度。我们发现,表面上碳元素在0至70%之间变化,氧化物厚度在5至100(?)间变化,表面上In/Sb原子比从0.6变至3.0,所有这些变化都与所用的腐蚀方法有关。 相似文献
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采用机械抛光和机械化学抛光的方法进行碲镉汞焦平面器件的碲锌镉衬底背面减薄,最后利用专用腐蚀液腐蚀的方法将碲锌镉衬底全部去除,碲镉汞完全露出;器件测试结果表明减薄后的MW1280×1024器件经受高低温循环冲击的可靠性显著提高。 相似文献
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一些DMOS产品的Vfsd上限要求做得很低,这样背金工艺的窗口就非常窄、经常发生Vfsd超上限的事件。如何拓宽背金工艺窗口、满足特殊DMOS产品对Vfsd的苛刻要求,在此研究了背面减薄、背面硅腐蚀和背面注入的主要工艺关键参数对Vfsd的影响。比较减薄机研磨轮目数后发现,研磨轮目数决定背面粗糙度,进而影响背面SI与背面金属的接触电阻和Vfsd;比较硅腐蚀有、无活性剂后发现,加了活性剂的背面硅腐蚀速率温和、均匀性好,可减缓切入式减薄机的Vfsd扇形分布、Vfsd均匀性明显改善。背注能量拉偏后发现,降低背注能量可降低Vfsd的Mean值。综合以上机理分析和实验结果,找到了背面最佳工艺条件,大大拓宽了背金工艺窗口。在最佳背面工艺条件下,这些特殊的DMOS产品Vfsd超上限几率从1.5%下降到0.1%以下、良率平均上升4%,此背金最佳工艺可以成为DMOS生产的标准工艺。 相似文献
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针对InSb 红外焦平面芯片中InSb 与Si 读出电路热膨胀系数不匹配导致芯片龟裂及铟柱断裂现象,开展了Si基InSb 红外焦平面探测器(FPA)的研究。运用磨抛减薄技术及金刚石点切削技术对芯片背面进行精确减薄,得到厚度为15m的InSb芯片;研究了在InSb芯片和Si片上溅射及蒸发减反膜工艺,得到InSb芯片和Si片粘贴后红外中短波光谱的透过率高达88%;对器件的整体工艺路线进行了探索,最终制备出Si基128128元InSb 红外焦平面探测器器件,测试结果表明:器件探测率、响应率及串音等性能指标达到传统工艺制备的器件性能指标;经温冲试验后测试器件结构保持完好,性能未发生变化,证明该工艺路线可解决芯片受应力冲击而产生的铟柱断裂及芯片龟裂的现象,可有效提高InSb焦平面探测器芯片的成品率。 相似文献
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Semiconductors - The field electron emission from individual grains on the surface of Si and III–V semiconductors, namely, gallium arsenide, indium arsenide, and indium antimonide is... 相似文献
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硅片CMP工艺会引入表面缺陷和沾污,通常采用NaOH和KOH作为腐蚀溶液,利用微腐蚀法将硅片表面的损伤污染层剥离,以免导致IC制备过程中产生二次缺陷,但会不可避免地引入金属离子。制备了一种用螯合剂和表面活性剂复配的新型清洗液,利用螯合剂对硅片表面损伤层进行微腐蚀,同时采用表面活性剂去除硅片表面吸附的微粒。经台阶仪和原子力显微镜检测,该清洗液能有效去除硅片表面损伤层和颗粒,同时螯合剂本身不含金属离子,并且对金属离子有螯合作用,可有效避免传统腐蚀液中金属离子带来的二次污染。 相似文献
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The characteristics of the injection of electrons into a semiconductor from a microprobe–micrograin nanogap are investigated with a tunneling microscope in the mode of field emission into locally selected surface microcrystals of indium antimonide, indium arsenide, and gallium arsenide. The current mechanisms are established and their parameters are determined by comparing the experimental I–V characteristics and those calculated from formulas of current transport. The effect of limitation of the current into the micrograins of indium antimonide and indium arsenide which manifests itself at injection levels exceeding a certain critical value, e.g., 6 × 1016 cm–3 for indium antimonide and 4 × 1017 cm–3 for indium arsenide, is discovered. A physical model, i.e., the localization of electrons in the surface area of a micrograin due to their Coulomb interaction, is proposed. 相似文献
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采用纳秒脉冲激光对石化设备普遍使用的20钢表面锈蚀层以及油污进行了激光清洗试验,通过正交实验法得到优化后的激光清洗工艺参数,在激光功率18 W,激光脉冲重复频率75kHz,扫描速度3 000mm/s的清洗工艺参数下可有效去除20钢表面的锈蚀层;在激光功率20 W,激光脉冲重复频率75 kHz,扫描速度2 250 mm/s的清洗工艺参数下可有效去除20钢表面附着的油污。分析了激光清洗前后材料表面形貌的变化,研究了激光清洗前后表面的显微硬度以及耐腐蚀性,结果表明:激光清洗可以在不改变材料的耐腐蚀性能的同时提升材料表面的显微硬度,从而达到理想的激光清洗效果。 相似文献
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《Electron Devices, IEEE Transactions on》1956,3(3):133-141
The property of magnetoresistivity can be employed to produce tuned amplifiers and oscillators principally for the sub-audio and possibly for the audio range. To accomplish this, a strip or a coil of a magnetoresistive material, such as bismuth, is placed in the magnetic circuit of a laminated or a ferrite core of an inductor and appropriately wired into an electric circuit containing a dc power supply. The circuitry is simple and the device can be constructed to match a wide range of input and output impedances. The recently developed semiconductor indium antimonide, having an exceptionally high magnetoresistive coefficient, offers hope of obtaining useful power gain at room temperature. The basic theoretical concepts are presented and experimental results with bismuth and indium antimonide are given. 相似文献
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Jason Jung Roy L. M. Op het Veld Rik Benoist Orson A. H. van der Molen Carlo Manders Marcel A. Verheijen Erik P. A. M. Bakkers 《Advanced functional materials》2021,31(38):2103062
Semiconductor-superconductor hybrids are commonly used in research on topological quantum computation. Traditionally, top-down approaches involving dry or wet etching are used to define the device geometry. These often aggressive processes risk causing damage to material surfaces, giving rise to scattering sites particularly problematic for quantum applications. Here, a method that maintains the flexibility and scalability of selective area grown nanowire networks while omitting the necessity of etching to create hybrid segments is proposed. Instead, it takes advantage of directional growth methods and uses bottom-up grown indium phosphide (InP) structures as shadowing objects to obtain selective metal deposition. The ability to lithographically define the position and area of these objects and to grow a predefined height ensures precise control of the shadowed region. The approach by growing indium antimonide nanowire networks with well-defined aluminium and lead (Pb) islands is demonstrated. Cross-section cuts of the nanowires reveal a sharp, oxide-free interface between semiconductor and superconductor. By growing InP structures on both sides of in-plane nanowires, a combination of platinum and Pb can independently be shadow deposited, enabling a scalable and reproducible in situ device fabrication. The semiconductor-superconductor nanostructures resulting from this approach are at the forefront of material development for Majorana based experiments. 相似文献