共查询到17条相似文献,搜索用时 156 毫秒
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低半波电压电光调制器是实现大规模光电集成的关键。文章提出了一种半波电压低于1.5 V的薄膜铌酸锂马赫-曾德尔(Mach-Zehnder, MZ)电光调制器,选用绝缘体上单晶薄膜铌酸锂材料作为设计基础,分析了直波导、多模干涉耦合器、弯曲波导和调制臂等结构对电光调制器的影响。结果表明,当调制臂长为3 mm时,该薄膜铌酸锂电光调制器具有1.05 V的低半波电压、0.319 dB的低损耗和27 dB的高消光比。同时,该调制器半波电压长度积为0.315 V·cm,调制效率高,具有与CMOS技术兼容的半波电压,有利于大规模光电集成。 相似文献
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高速电光调制器是宽带光通信网络和微波光子系统中的关键元器件之一。相对于体材料铌酸锂而言,薄膜铌酸锂材料由于其较强的光场限制能力,在构建小尺寸、宽带、低半波电压的高性能电光调制芯片上有独特的优势。文章基于薄膜铌酸锂材料研制了一种3 dB带宽不低于50 GHz的电光调制芯片,并采用光纤与波导水平端面耦合的光学封装方案和基于1.85 mm同轴接头的射频封装方案,实现了全封装的薄膜铌酸锂电光调制器。测量结果表明,封装后器件的光学插入损耗小于等于5 dB,3 dB带宽大于等于40 GHz,射频半波电压小于等于3 V@1 GHz。 相似文献
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近年来,基于薄膜铌酸锂(TFLN)平台的高性能电光调制器以其小体积、低能量损耗等特点受到广泛关注。本文提出了一种新的具有垂直电极结构的Y波导铌酸锂薄膜电光调制器。研究了调制器的半波电压与缓冲层厚度之间的关系,优化了Y波导的设计参数,最后设计得到插入损耗<5 dB, 半波电压<1.5 V的高性能调制器。本文不仅为基于TFLN平台的小型化波导的设计和实现提供了思路,而且为制造高性能和多功能的电光调制器提供了实验依据。 相似文献
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基于CMOS兼容的硅基光子集成工艺,设计并实现了一种具有高边带抑制比的硅基单片集成单边带调制器。单边带调制器采用正交混合耦合器实现上下两臂等幅度、90°相位差的射频信号加载,基于硅基双驱动马赫曾德尔调制器的热移相器调控上下两臂光相位差为90°,实现了效果显著的单边带抑制。基于CUMEC公司CSiP180 Al工艺和工艺设计包(PDK)完成芯片制备,采用金丝引线实现了正交混合耦合器的空气桥结构。测试结果显示该硅基单片集成单边带调制器在18~32 GHz频率内边带抑制比均高于12 dB,在21 GHz工作频率时边带抑制比达到了32 dB。该单边带调制器有望应用在光通信和微波光子系统中。 相似文献
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针对传统铌酸锂电光调制器体积大、带宽小等技术问题,提出了一种基于薄膜铌酸锂调制器芯片的新型电光调制器的设计方法,给出了薄膜铌酸锂电光调制器高频传输仿真模型,详细介绍了薄膜铌酸锂电光调制器的高频信号馈入设计、过渡薄膜基板高频阻抗匹配设计,并测试了40 GHz小尺寸薄膜铌酸锂电光调制器的核心指标。测试结果表明:设计的薄膜铌酸锂电光调制器插入损耗、半波电压、3 d B带宽、产品尺寸分别为4.1 d B、3.9 V、40 GHz、30 mm×10 mm×5 mm,比传统铌酸锂电光调制器性能优越。 相似文献
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近年来,薄膜铌酸锂光子集成技术发展极为迅速,其背后有着深刻的物理、材料、技术原因。单晶薄膜铌酸锂为解决光子集成芯片领域长期存在的低传输损耗、高密度集成以及低调制功耗需求提供了至今为止综合性能最优的解决方案。面向未来的新一代高速光电器件与超大规模光子集成芯片应用,本文回顾了薄膜铌酸锂光子技术的起源及其近期的快速发展,讨论了若干薄膜铌酸锂光子结构的加工技术,并展示了一系列当前性能最优的薄膜铌酸锂光子集成器件与系统,包括超低损耗可调光波导延时线、超高速光调制器、高效率量子光源,以及高功率片上放大器与片上激光器。这些器件以其体积小、质量轻、功耗低、性能好的综合优势,将对整个光电子产业产生难以估量的影响。 相似文献
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An electrooptic intensity modulator using lithium niobate has been developed for applications in binary fiber optical digital communications at the wavelength of 1.06 µm. We have shown that many shortcomings generally associated with electro-optic modulators can be surmounted. The modulator was driven by a compact transistor amplifier, temperature dependence of the static birefringence was minimized, and the optical bias was made adjustable by a dc voltage superposed on the signal. The modulator has been operated at 70-Mb/s pulse rate and 100-percent modulation, its extinction ratio is better than 40 to 1 and the optical insertion loss is about 1 dB. 相似文献
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Solgaard O. Godil A.A. Hemenway B.R. Bloom D.M. 《Selected Areas in Communications, IEEE Journal on》1991,9(5):704-710
The authors describe the operating principle, design, and performance of an all-silicon light modulator at 1.3 μm wavelength. The modulator is based on the plasma effect in silicon and the mode selectivity of single-mode optical fibers, resulting in low polarization dependence and the capability of handling high light intensities. Standard silicon IC technology is used in the fabrication process and the modulator has a vertical structure that takes up a small surface area (the active area matches the single-mode fiber core of 9 μm diameter), simplifying integration with other circuitry on the same chip. The modulator can be directly coupled to a single-mode optical fiber, without using lenses or other bulk optical components. Typical performance of the fabricated modulators is 6 dB insertion loss, 24% modulation depth, and 60 MHz bandwidth with a current drive of 22 mA rms 相似文献
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Kondo J. Kondo A. Aoki K. Imaeda M. Mori T. Mizuno Y. Takatsuji S. Kozuka Y. Mitomi O. Minakata M. 《Lightwave Technology, Journal of》2002,20(12):2110-2114
We propose a newly designed X-cut lithium niobate (LiNbO/sub 3/) optical modulator. It has a two-step back-slot structure to satisfy the velocity-matching condition without the buffer layer of silicon dioxide (SiO/sub 2/). Accordingly, this modulator can achieve low drive voltage and low optical insertion loss. In addition, the dc-drift phenomena due to the buffer layer can be suppressed. This structure is fabricated with micromachining technology using excimer laser ablation. The optical 3-dB bandwidth of the fabricated modulator reaches 30 GHz, and the drive voltage is less than 3 V at 1 kHz. From the measurement of the optical eye diagram at 43.5-Gb/s, clear eye openings were obtained. This modulator is sufficient for 40-Gb/s optical transmission systems. 相似文献
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作为中红外波段中最接近O波段和C波段的波段,2 μm波段区域逐渐引起人们的广泛关注。主要对2 μm波段的马赫-增德尔型调制器进行优化设计和仿真,根据2 μm波长下光模场分布的特点,选用具有340 nm厚度顶层硅的SOI衬底,结合实际工艺中240 nm硅刻蚀深度,得到宽度为600 nm以及平板层厚度为100 nm的最优脊波导结构。通过优化掺杂浓度和掺杂区位置获得综合性能最优的调制器器件,在4 V反向偏压下器件光损耗为5.17 dB/cm,调制效率为2.86 V·cm,静态消光比为23.8 dB,3dB EO带宽为27.1 GHz。同时,与220 nm厚度顶层硅器件相比较,器件的综合性能更为优越。研究内容为后续器件实际制作提供了依据,也为后续2 μm波段光收发集成模块所需调制器设计提供了新的方向。 相似文献
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Electro-optic (EO) modulator plays a very critical role in the optical communication systems. Here, we report a stimulated thin-film lithium niobate (LN) modulator with a half-wave voltage-length product of 1.8 V.cm, which can successfully achieve modulation and demodulation of a 1 GHz sinusoidal signal with an amplitude of 5 V in experiment. The optical loss caused by metal electrodes is reduced by optimizing the waveguide structure and depositing silica onto the waveguide, and group-velocity matching and characteristic impedance matching are achieved by optimizing the buffer silica layer and the electrode structure for larger bandwidth, which simultaneously improves the modulation efficiency and bandwidth performance. Our work demonstrated here paves a foundation for integrated photonics. 相似文献
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提出了一种用于电光调制和粗波分复用的片上集成器件。该集成器件的电光调制器模块和粗波分复用器模块都是由硅基光子晶体波导和L3型谐振腔组成,两个模块间采用硅基光子晶体波导连接。该器件根据等离子体色散效应,采用L3型谐振腔和PN结实现了对波长的调制;根据微腔与波导的直接耦合理论,采用L3型谐振腔结构实现了滤波。利用基于三维时域有限差分法(3D-FDTD)的Lumerical软件对其进行仿真分析,结果表明该集成器件在工作波长1530 nm和1550 nm下均可以先完成各自的电光调制再进行双通道波长的复用。该器件在工作波长1530 nm和1550 nm下的插入损耗分别为0.70 dB和0.95 dB,消光比分别为20.97 dB和22.05 dB,调制深度均为0.99,信道串扰分别为-29.05 dB和-27.59 dB,器件尺寸仅为17.83μm×17.3μm×0.22μm。该集成器件结构紧凑,易于集成,可应用于高速大容量波分复用光通信系统。 相似文献