应用在远程控制系统中的73M2901

本文介绍了单片全双工调制解调器芯片73M2901的基本功能和特点,阐述了73M2901在电话网络远程控制系统中的应用。利用该方案,可在电话网络上进行远程数据传输,实现计算机对现场的远程监控。     

应用在远程控制系统中的72M2901

本文介绍了单片全双工调制解调器芯片73M2901的基本功能和特点,阐述了73M2901在电话网络远程控制系统中的应用.利用该方案,可在电话网络上进行远程数据传输,实现计算机对现场的远程监控.     

三星CS-2901AP大屏幕彩电检修

接修一台三星CN-2901AP彩电，相关图纸资料较缺，市场配件良莠不齐，走了不少弯路才得以修复，写出来提请大家留意。     

TMP88CS38N遥控系统分析与检修

<正> TMP88CS38N遥控系统广泛用于海信TB1251机心,如最近上市的海信TC3488D、TF3488D、TC2901、TF2901、TC2908S、TF2908S、TC2908U、TF2908U、TC3482D、TC3489D等彩电均使用这种遥控系统。本文以TC3488D彩电为例,来对这一遥控系统进行分析。     

程序设计、程序框图

Y2002-63334-2901 0310601用于自动着陆仪的全局收敛近似动态程序设计=Globally convergent approximate dynamic programmingapplied to an autolander[会,英]/Murray,J.& Cox,C.//Proceedings of the 2001 American Control Confer-ence Vol.4 of 6.—2901～2906(HE)0310602面向对象的 LU-SGS 流场计算程序设计[刊]/杨珏//计算机工程.—2002,28(12).—235～236,281(E)介绍了求解多维定常可压缩流场的 LU-SGS 方法的面向对象的特性。通过全面的分析,提供了一种行之有效的面向对象的 LU-SGS 流场计算程序设计。参5     

TCL2901A彩电维修实例

故障现象:29英寸TCL2901A彩电开机黑屏,无高压静电反应,无伴音、无图像,待机指示灯红灯亮。分析检修:打开电视机,测量行管集电极无直流电压,行输     

思科路由器在实验室计算机联网中的应用

为满足现代化教学的需求,高职院校非常重视实验室机房建设。实验室计算机组建内部局域网并接入Internet已成为校园网建设的重点工程。本文针对实训中心新建实验室规划设计网络架构,采用思科2901路由器接入校园网,并提供了路由器的详细配置参数,实现了联网计算机快速访问校园网和Internet资源。     

单片式Modem芯片73M2901／5V在自动抄表系统中的应用

文章介绍了采用专用Modem芯片73M2901/5V与MCU和PC直接构建自动抄表系统的远程通信网络,大大克服了以前用户终端通信设备体积大、价格贵的缺点,并且采用自定义的通信方式,有效地避免了链路中数据包的丢失.     

用73M2901C实现单片机与PC机之间的远程数据通讯

在对TDK公司生产的单片MODEM芯片73M2901C的主要特点进行介绍的基础上 ,文中介绍了一种利用单片MODEM实现单片机与PC机之间的数据远程通讯的实现方法 ,同时对方案中涉及的电路及程序设计进行了详细地分析和论述     

基于USRP与YOLOv3算法的信号采集与识别设计

为了加快射频信号的采集和分析,采用NI USRP-2901硬件设备和LabVIEW软件实现一个射频信号采集处理平台。射频信号经过USRP-2901设备被放大、混频、滤波,滤波后的信号经过AD9361捷变收发器进行模数转换。通过FPGA将数字信号下变频到基带同相I信号和正交相Q信号。分别对I/Q信号加入汉明窗、汉宁窗、矩形窗,之后进行FFT得到频谱图数据。通过YOLOv3算法对标注好的频谱图数据集进行训练,训练完成后得到权重文件。调用权重文件对频谱图进行识别,识别时域信号中添加的是哪种窗函数。实验结果表明,采用YOLOv3算法比其他基于RPN算法的目标检测算法要好,YOLOv3算法泛化能力强,对于背景物体的识别有更高的准确率。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.