基于Lab VIEW的USB数据采集系统的设计与实现

设计采用MC68HC908JB8芯片做为USB通信传输模块的控制核心,利用ATmega16做为数据采集单元的主控单片机。使用LabVIEW软件设计上位机的可视化工作界面,可对接口单元传输的数据进行监测和处理,并可实现对下位机的实时控制。数据采集模块主要采集温度、湿度、电机转速等监测量信息,USB通信传输模块将采集的数据通过USB传输协议传输到上位机,LabVIEW软件对传输到上位机的数据进行显示、分析,并对数据量进行计算,从而控制下位机动作,以达到调节控制的目的。系统硬件工作稳定可靠,软件控制准确,数据采集速度快,实时精度高,并且整机支持热插拔,可应用于工业控制、智能家居等场合。     

运动控制系统接口模块设计

为一种微小型车辆和机器人的双处理器主从控制系统设计接口模块,控制系统以PC为上位机,DSP为下位机。该接口模块采用PCI总线通讯的方式,实现上位机和下位机之间的通讯,上位机和下位机配合完成对某小型履带式车多个自由度的控制和车体姿态信息采集的功能。文中选用总线接口芯片CH365完成接口模块电路的硬件设计,并且选择驱动模型WDM,介绍驱动开发软件和调试工具,对接口模块进行驱动开发,完成驱动程序的编写。     

基于智能网联技术的房屋健康监测系统设计

针对常规房屋健康监测装置无法实时上传数据的局限性,设计了一种可以实时采集并实时上传数据到云端的房屋健康监测系统。该系统由上位机和下位机组成,采用物联网模块实现无线通信。上位机使用阿里云物联网平台网页版进行开发,下位机采用微处理器将房屋健康监测传感器采集到的数据和北斗模块得到的位置信息一并上传到云端。该系统实现了上位机控制的远程主动数据测量功能和下位机控制的自动上报功能,并能同步显示采集数据的位置和时间信息,具有良好的应用前景。     

基于DSP的波形发生器的课程设计分析

本文介绍了一项以TMS320C54X系列DSP芯片作为核心处理单元的波形发生器的课程设计。本系统采用单片机和DSP分别作为上位机和下位机,上位机接收键盘输入的波形参数,下位机接收上位机输入参数并以此生成相应波形,最后通过数模转换芯片输出模拟信号。整个系统充分结合了课程的理论与实践环节,达到了很好的教学目的。     

基于ARM的RFID门禁控制系统设计

在此主要介绍一种基于ARM的RFID智能门禁控制系统的设计,系统由上位机和下位机两部分组成。下位机以ARM STM32F103VET6芯片为主控制单元,通过M102GPCV3模块读/写卡片信息,该模块内嵌MFRC522,采用13.56 MHz非接触射频技术进行读/写。上位机采用MySQL数据库管理卡片信息,用Java Web页面展示信息,用户可登录指定网站查看、修改信息。     

基于S3C2410的桌球自动摆放控制器设计

当前的桌球摆放采用人工摆放方法,准确定位和智能控制性不好。设计一种基于S3C2410的桌球自动摆放控制器,提高桌球摆放的人工智能性。控制器的主机控制分为上位机和下位机两部分组成,上位机实现对桌球台面的视觉信息采集和桌球定位摆放方位分析,采用GT8340嵌入式控制芯片控制上位机的自动对焦高清摄像头,采用多线程串口传输方法桌球分布的标签阅读识别,实现对桌球定位摆放的多维数据的接收、存储和传输。下位机是控制器的主机控制模块,通过程序加载电路加载控制算法,进行桌球摆放信息感知和执行器控制。下位机控制器采用低功耗的S3C2410作为主控芯片,实现控制器的集成设计。测试结果表明,该控制器具有较好的控制精度,对桌球定位摆放的准确性较高,时间开销较小。     

三轴步进电机控制系统

该三轴电机控制系统应用于眼底照相系统,实现相机的准确移动与定位。系统采用STC89C58RD 芯片,并以RTX51TINY为操作系统,结合上位机控制三轴电机的上下、左右、前后与加减速运动。上位机只需通过发送简单的指令即可控制三轴电机的运动从而实现相机的三维运动,自动完成眼底照相过程。     

基于执行轨迹的软件缺陷自定位系统设计与研究

为了解决面向开源软件缺陷自定位系统存在定位精准度低的问题,在保留原定位系统结构的基础上,设计基于执行轨迹的软件缺陷自定位系统。在硬件结构部署方面,采用AM2301型号芯片设计信号传感器,联合校准系数,设置总线接口,实现信号自动传输。下位机内部镶嵌Galileo GN100型号定位芯片,通过NMEA-0183V4.1协议获取数据信息,设置固定标记点,集合线性部件进行软件缺陷位置定位与控制。通过通信接口电路,使上位机RS 232串口通信接收下位机传送的信息。依据下位机执行轨迹组织、轨迹选择、怀疑率计算结果,设计评价报告标准,获取缺陷位置坐标,经由上位机显示具体缺陷位置信息。在Windows平台进行系统测试,由测试结果可知,该系统定位精准度最高可达到93%,满足人们对软件可信度高标准的要求。     

微小地面机器人监控系统设计

为了解决微小地面机器人群体控制及状态监测及显示的问题,设计一种微小地面机器人的监控系统。系统由上位机、ZigBee通信模块和下位机组成。上位机采用VB语言设计监控界面,利用MSComm控件实现串口通信,并通过调用Matlab的COM组件,实现粒子群优化算法预推目标运动轨迹;ZigBee芯片选用高度集成、低功耗、高灵敏度的784/868/915MHz 的ZigBit900,通过串口与上位机及下位机连接,实现下位机与上位机组网通信;下位机以DSPIC33F单片机为主处理器,完成与上位机、小车和其它模块之间的数据传输控制,实现监控系统对微小地面机器人群的监测和控制。通过实验表明,该监控系统稳定、实时、可靠。     

基于ARM和nRF905的智能农业系统设计

系统以ARM LPC2378和无线射频模块为核心,分为上位机和下位机两部分。下位机作为数据采集模块,并连接执行装置和各类传感器,通过传感器采集农林环境数据,以一定时间间隔将各数据通过无线射频模块nRF905发送给上位机;上位机负责农林环境的监控,通过nRF905进行农林环境数据采集,并分析数据。当数据异常时,上位机发送执行信号给下位机,控制执行单元工作,从而改善农林环境,利于植物生长。整个系统实现了无线通信在数据采集及控制中的使用,传输距离较远,在生态环境监测领域具有广泛的应用。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.