基于MSP430单片机的USB接口固件编程的研究

基于MSP430系列单片机的系统设计,已经遍布电子产品的每一个领域。以MSP430单片机开发的系统与计算机的通信,可以使得信息数据更好更快的被处理。基于PDIUSBD12芯片,在MSP430F169单片机系统中,设计了用于MSP430进行USB数据传输的固件程序。通过实验结果及其分析,文中的设计能够满足MSP430F169系统USB传输的需求。     

第5讲 MSP430实现程控A／D数据采集

在MSP430单片机家族中，很多系列的单片机中都有12通道12位的ADC(简称ADC12模块)。如MSP430F13X、MSP430F14X、MSP430F15X、MSP430F16X、MSP430F43X、MSP430F44X等系列。较其它带A／D转换的单片机，MSP430的ADC精度高，设计灵活巧妙，给数据采集系统的设计带来了全新的思路。     

单片机实用技术讲座(9) 第5讲 MSP430实现程控A/D数据采集

在MSP430单片机家族中, 很多系列的单片机中都有12通道12位的ADC(简称ADC12模块)。如MSP430F13X、MSP430F14X、MSP430F15X、MSP430F16X、MSP430F43X、MSP430F44X等系列。较其它带A/D转换的单片机,MSP430的ADC精度高,设计灵活巧妙,给数据采集系统的设计带来了全新的思路。1.ADC1     

MSP430单片机复位电路可靠性设计

为了解决混合信号控制器MSP430在实际应用中常遇到的因偶发复位失效而造成整个电路系统死机的问题,对MSP430系列单片机的复位机制进行了深入浅出的分析,提出了对MSP430单片机不同系列采用不同复位电路的设计方法,并详细介绍了具体的原理图、元件及参数。经过实践证明,通过对MSP430复位电路的深入分析和详细设计,有效地解决了其在应用时出现的偶发复位失效的问题,大大降低了系统死机的几率,提高了系统的可靠性。     

基于MSP430单片机和DS18820的数字温度计

为了在工业生产及过程控制中准确测量温度．设计了一种基于低功耗MSP430单片机的数字温度计。整个系统通过单片机MSP430F1121A控制DS18820读取温度,采用数码管显示,温度传感器DS18820与单片机之间通过串口进行数据传输。MSP430系列单片机具有超低功耗,且外围的整合性高,DS18820只需一个端口即可实现数据通信,连接方便。通过多次实验证明,该系统的测试结果与实际环境温度一致,除了具有接口电路简单、测量精度高、误差小、可靠性高等特点外,其低成本、低功耗的特点使其拥有更广阔的应用前景。     

基于MSP430单片机的数据采集系统

介绍了一种用TI公司新一代16位单片机MSP430系列的MSP430F169设计的实时数据采集系统。MSP430系列是TI公司推出的超低功耗混合信号微控制器,这些微控制器可用电池供电并长期工作。利用单片机内部自带的12位AD和DMA进行数据的采集和传输,并通过液晶显示模块将采集的数据以波形方式直观地显示。该系统具有硬件电路简单、采集精度较高、界面友好等优点。     

基于MSP430F149的光伏MPPT控制器的设计

本文介绍了一种采用超低功耗单片机MSP430F149控制系统来实现太阳能光伏电池最大功率点跟踪的精简设计,在这个设计中提出来采用变步长扰动分析法来实现MPPT的控制,并分析和比较了Buck和Boost电路的优缺点,然后采用Boost电路结合MSP430F149单片机完成了MPPT控制器的设计。最后,采取模拟实验的方法对控制器的功能进行了验证。结果表明,该设计不但电路设计简单,软硬件结合,控制方法灵活,而且能够有效的完成最大功率跟踪的目的。     

MSP430低功耗原理及其在海温测量中的应用

介绍了MSP430系列单片机的低功耗原理及工作模式,分析了各种工作模式之间的快速转换方式。针对电池供电和空间受限的海水温度测量环境,利用MSP430系列单片机低功耗、高性能、多外设的优良特性,提出了海水温度采集系统的设计方案。方案采用MSP430F4794作为运算控制器,NTC热敏电阻作为温度传感器,利用MSP430F4794芯片内部自带的16位A／D转换器进行A／D转换。硬件设计上采用低功耗的外围器件,软件设计上充分利用MSP430提供的多种低功耗工作模式,实现了整个系统的低功耗。     

基于MSP430单片机的RS-485通信

介绍了MSP430系列新一代低功耗单片机的特点,指出了该系列单片机与某些特殊功能芯片接口时存在的电压兼容性问题,简介了MAX1480／MAX1490系列RS－485／422通信接口芯片,提出了一种MAX1480／MAX1490系列芯片与MSP430系列单片机的直接接口方案,并实验验证了方案的正确性。     

基于MSP430单片机和DSl8B20的数字温度计

为了在工业生产及过程控制中准确测量温度,设计了一种基于低功耗MSP430单片机的数字温度计.整个系统通过单片机MSP430F1121A控制DS18B20读取温度,采用数码管显示,温度传感器DS18820与单片机之间通过串口进行数据传输.MSP430系列单片机具有超低功耗,且外围的整合性高,DS18820只需一个端口即可实现数据通信,连接方便.通过多次实验证明,该系统的测试结果与实际环境温度一致,除了具有接口电路简单、测量精度高、误差小、可靠性高等特点外,其低成本、低功耗的特点使其拥有更广阔的应用前景.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.