基于AHP-TOPSIS法的质量管理体系成熟度评价模型研究

为了解决质量管理体系成熟度评价的问题,在层次分析法（AHP）与逼近理想解的排序法（TOPSIS）理论的基础上,建立AHP-TOPSIS综合评判指标体系模型,对4家单位的质量管理体系进行评判。从战略规划、质量管理体系开发、质量管理体系监控与评价3个方面综合地考虑评判指标,通过AHP确定目标层权重向量,结合AHP-TOPS...     

基于AHP的遥感卫星任务规划效能评价方法

目前,针对遥感卫星任务规划问题的求解算法种类繁多,但是对算法效能进行客观定量的综合评价一直是个难题。对此,提出了一个面向应用的算法效能评价机制,给出了标准测试算例集的生成方法,并首次从资源利用率和任务满足度2个方面,抽取建立了算法的分层评价指标体系,基于层次分析(Analytic Hierarchy Process,AHP)算法和Delphi算法建立了算法效能的综合评价模型,给出了具体的评价步骤。通过2个算法的实例对比分析,验证了方法和模型的有效性。     

使用多准则决策法的环境感知路由协议

本文提出了一个新的移动节点的分级方案，它是基于两个多准则决策方法的结合，即模糊环境下的层次分析法（AHP）和近似理想解决方案的排序性能技术（TOPSIS）。模糊AHP是用来分析簇首选择问题的结构，并确定这个准则的权重；而模糊TOPSIS用于获得最终的移动节点等级值。基于节点等级，我们提出一种新的簇，它使用能够选择最佳簇首和最佳路径的路由算法。仿真结果表明，该方法提高了网络的精度和寿命，降低了网络开销。     

基于VPRSM和相对熵排序法的辐射源威胁评估

辐射源威胁评估属于多属性决策问题,逼近理想解排序(TOPSIS)法作为经典的多属性决策方法,在威胁评估中应用广泛,但TOPSIS存在人为设定权重和位于正、负理想点中垂线上的对象无法进行区分排序的问题。针对TOPSIS法的问题,提出了基于变精度粗糙集模型(VPRSM)和相对熵排序法的辐射源威胁评估方法。该方法首先基于VPRSM利用先验辐射源数据信息确定权重;然后,将相对熵引入TOPSIS法对其加以改进,通过相对熵排序法完成威胁评估。实例仿真验证了所提方法的有效性和适用性。     

基于多网并行传输技术的海上异构网络接入算法

针对海上异构无线网络中网络接入选择算法存在干扰环境适应性不强、单网传输效率低、业务完成率低的问题,提出了一种基于多网并行传输的海上异构网络接入选择算法。该算法在满足多属性决策的基础上,采用效用函数对网络属性值进行数值标准化,再采用改进的逼近理想值排序(Technique for Order Preference by Similarity to an Ideal Solution,TOPSIS)法计算出备选接入网络方案的排序,最后选择排序靠前的网络进行接入。仿真结果表明该算法相对于传统TOPSIS算法和模拟人工切换算法能有效降低接入成本,改善用户服务质量,提高业务完成率。     

基于改进AHP-TOPSIS法天波雷达作战效能评估

针对传统逼近理想解排序(TOPSIS)法在确定权重系数上面的缺陷和不足,提出了改进层次分析法(AHP)-TOPSIS法。该方法运用几何平均超传递近似法处理原始判断矩阵,通过构造判断矩阵的互补矩阵,对互补矩阵进行几何平均,得到超传递近似矩阵,使新的判断矩阵具有一致性的同时,又保持了专家的原始意见;同时,根据天波雷达作战效能评估指标体系的层次结构,采用分层的TOPSIS 法进行作战效能评估。最后通过实例分析表明所提方法是合理和有效的。     

基于先验知识和信息分布的目标威胁估计方法

重点对威胁度评估技术特点进行了分析,通过构建空袭目标威胁度评估模型,来研究相关原理和方法拓展,最后通过若干实例分析检验了模型的实用性和合法性,其中威胁度评估模型采用多属性决策方法,对单因素威胁度的量化用隶属函数描述,权值计算采用层次分析法(AHP)与熵权法相结合的方法,并用TOPSIS排序法(优劣解距离法)对目标威胁度进行了排序.     

PSO-TOPSIS的天基信息网络接入选择算法

针对未来天基信息网络用户接入选择过程中接入节点候选集大、决策变量多和传统接入算法不够高效的问题,提出了粒子群(Particle Swarm Optimization,PSO)与优劣解距离法(Technique for Order Preference by Similarity to an Ideal Solution,TOPSIS)相结合的接入选择算法。建立了天基信息网络接入选择问题模型,引入优劣解距离法,在综合考虑多种决策变量的基础上对候选接入节点进行优劣排序并做出接入选择;设计了粒子群优化算法,利用反馈的网络性能参数驱动粒子群算法对权重向量做出优化,避免了人为确定系数时的主观性,进一步改善了网络性能。仿真结果表明,TOPSIS接入选择方法将接入阻塞率和路由时延分别降低了82%和3%,用户满意度和网络负载均衡提高了27%和12%,而PSO-TOPSIS方法使网络性能得到了进一步提高。     

基于TOPSIS-AHP法的红外航空成像侦察相机综合评价

根据红外航空相机的成像原理,提出了相机评估指标.通过层次分析法(AHP)求解得到各指标的权重向量,并运用逼近理想解排序法(TOPSIS)对相应指标进行计算,最后通过实例验证了该方法的可行性.计算结果表明,空间分辨率和温度分辨率是红外航空相机敏感度最高的两类指标,为今后相机的研制与改进提供了参考方向.     

基于模糊AHP方法的机场航班延误水平评估

首先建立了评估机场航班延误水平的指标集,利用模糊一致矩阵表征专家判断信息,使用模糊层次分析法(AHP)得到各因素的权重,从而得到了各因素的重要程度排序。结合模糊隶属度矩阵,实现了使用定性与定量相结合的方法构建评估航班延误水平的综合评价模型,为进一步治理航班延误提供了依据。并通过对某机场的调研数据分析,验证了该模糊评价方法切实可行。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its