一种移相器快速化测试系统的设计

随着相控阵雷达技术的迅猛发展,在大型天馈线系统中铁氧体移相器得以大规模应用,相应地,提高铁氧体移相器测试生产效率以满足日益增长的需求已成为许多移相器生产厂家的努力方向。文中针对某一锁式铁氧体移相器组件,设计了一种快速化测试系统,通过与之前未使用测试系统对比,满足移相器的测试要求。该测试系统大大提升了移相器测试效率,同时,该测试系统设计思路同样可应用于其他种类铁氧体器件测试,从而提高了铁氧体器件批产能力。     

微波和毫米波铁氧体移相器

本文详细论述了微波频段普遍使用的三种铁氧体移相器(即双环铁氧体移相器、双模铁氧体移相器和旋转场铁氧体移相器)的性能,讨论了由铁氧体饱和磁化强度值所确定的这三种器件的使用频率。     

双模铁氧体器件的理论和设计(一)

本文从复合磁化场双模铁氧体变极化方程出发，研究各种双模器件的工作原理，包括V／Φ型和V／F型全极化器，双模旋转场器件。对双模移相器、旋转场移相器、圆极化移相器的相移／极化相关性作了深入讨论，并分析了移相器的精度问题。     

铁氧体非互易移相器的高功率容量分析

通过计算铁氧体波导移相器的微波磁场和功率分布,给出了一种分析该类器件峰值功率容量的有效方法,取得了与工程试验相一致的结果,从而使得铁氧体非互易移相器的峰值功率容量大小能够在设计阶段得以较准确计算。     

铁氧体双模器件的广义理论

铁氧体双模器件包括双模移相器,圆极化移相器,旋转场移相器.双模变极化器等等.其种类繁多,每种器件由若干基本双模段级联而成.每个基本单元上,外加磁场形式各不相同,有四磁极磁化场,纵向磁化场,双磁极磁化场及其混合磁化场.本文拟用统一的理论对其进行处理及分析并引入具体实例使用CAD技术进行计算,从而进一步确认理论的正确性.     

毫米波频段铁氧体移相器的制作和性能

35GHz 到94GHz 范围的毫米波器件难以制作,并具有边界性能。本文讨论毫米波非互易铁氧体侈相器的设计和电弧等离子制作工艺。在开始制作94GHz 移相器之前,已经研究了35GHz 铁氧体移相器的设计和制作技术。4πM_s 为4100高斯的锂铁氧体粉已用于电弧等离子喷涂移相器。对铁氧体粉的处理及其等离子喷涂性能进行了讨论。用插入损耗、带宽和差相移评价器件的性能。铁氧体移相器制作中的任何缺陷,如裂缝或不良的铁氧体介质装配,都会给     

一种适用于锁式铁氧体器件的驱动电路

分析了锁式铁氧体器件的等效负载特性,在此基础上给出了专用驱动电路的设计,并分析了其原理以及应用结果。从中可以看出,该电路能用于驱动所有锁式铁氧体器件,特别适用于驱动锁式铁氧体移相器。     

“背脊波导锁式铁氧体移相器的实验研究”的注记

编辑同志: 《电子学报》一九七九年第三期发表了本人的文章“背脊波导锁式铁氧体移相器的实验研究”。近两年来,随着研究工作的深入,发现对该文的式(17)进行适当的修正后,理论和实验更为吻合。实验发现:当h/b≈0.5时,不连续电容将使器件的差相移下降,考虑到不连续电容与h/b的固有关系,因此,对这种结构的移相器分两个区域予以补充和修正。     

铁氧体波导移相器的高功率设计初探

通过计算铁氧体波导移相器的微波磁场和功率分布 ,试图找到一种分析该类器件峰值功率容量的有效方法 ;在此基础上 ,针对前人的分析方法和结论 ,提出了自己的看法。     

三公分压缩波导铁氧体移相器

在X波段分析计算了铁氧体移相器中高次模的归一化截止频率随移相器横向结构尺寸的变化规律;设计制做了三公分压缩波导铁氧体移相器,其性能测量结果与理论相符。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.